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相关论文: Edge States in Molecular Solid \alpha-(BEDT-TTF)2I…

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We present key issues of related phenomenons of the Ferroelectricity and the Charge Disproportionation in organic metals. In (TMTTF_2X the dielectric susceptibility demonstrates clear cases of the ferroelectric and anti-ferroelectric phase…

强关联电子 · 物理学 2007-05-23 S. Brazovskii , P. Monceau , F. Nad

In this Letter, it is shown that interactions can facilitate the emergence of topological edge states of quantum-degenerate bosonic systems in the presence of a harmonic potential. This effect is demonstrated with the concrete model of a…

量子气体 · 物理学 2017-12-05 Bogdan Galilo , Derek K. K. Lee , Ryan Barnett

The relativistic Dirac equation covers the fundamentals of electronic phenomena in solids and as such it effectively describes the electronic states of the topological insulators like Bi$_2$Se$_3$ and Bi$_2$Te$_3$. Topological insulators…

强关联电子 · 物理学 2022-11-24 Hiroki Isobe , Naoto Nagaosa

Motivated by the recent twisted MoTe$_2$ experiment [arXiv:2601.18508], we develop a disordered interacting edge theory of a fractional topological insulator at $\nu_{\text{tot}}=4/3$, consisting of two time-reversal-conjugated $\nu=2/3$…

强关联电子 · 物理学 2026-03-12 Yang-Zhi Chou , Sankar Das Sarma

Step edges of topological crystalline insulators can be viewed as predecessors of higher-order topology, as they embody one-dimensional edge channels embedded in an effective three-dimensional electronic vacuum emanating from the…

Electrons in solids are characterized by the energy bands, which indicate that electrons are considered to be "elementary particles" with specific effective masses and g-factors reflecting features of each solid. There are cases where these…

介观与纳米尺度物理 · 物理学 2015-05-27 Hidetoshi Fukuyama , Akito Kobayashi , Yoshikazu Suzumura

Mott insulators are commonly pictured with electrons localized on lattice sites. Their low-energy degrees of freedom involve spins only. Here we observe emerging charge degrees of freedom in a molecule-based Mott insulator…

We study a three-dimensional Anderson-Hubbard model under the coexistence of short-range interaction and diagonal disorder within the Hartree-Fock approximation. We show that the density of states at the Fermi energy is suppressed in the…

强关联电子 · 物理学 2010-09-13 Hiroshi Shinaoka , Masatoshi Imada

We address the role played by charged defects in doped Mott insulators with active orbital degrees of freedom. It is observed that defects feature a rather complex and rich physics, which is well captured by a degenerate Hubbard model…

强关联电子 · 物理学 2018-04-09 Adolfo Avella , Peter Horsch , Andrzej M. Oleś

We use the bulk Hamiltonian for a three-dimensional topological insulator such as $\rm Bi_2 Se_3$ to study the states which appear on its various surfaces and along the edge between two surfaces. We use both analytical methods based on the…

介观与纳米尺度物理 · 物理学 2015-06-18 Oindrila Deb , Abhiram Soori , Diptiman Sen

Triangular-lattice systems attract a lot of attention due to various frustration-induced and strongly correlated effects. Here, we focus on the charge-ordering phenomenon by means of investigation of the extended Hubbard model with…

强关联电子 · 物理学 2026-05-19 Aleksey Alekseev , Agnieszka Cichy , Konrad Jerzy Kapcia

Recent studies of organic molecular solids are highlighted by their complex phase diagram and light-induced phenomena, such as Mott insulator, spin liquid phase, and superconductivity. However, a discrepancy between experimental observation…

Motivated by the results of recent transport and optical conductivity studies, we propose a semi-infinite two-dimensional lattice model for interacting massive Dirac electrons in the pressurized organic conductor…

介观与纳米尺度物理 · 物理学 2019-09-04 Daigo Ohki , Yukiko Omori , Akito Kobayashi

We investigate the interplay of the electron-electron and electron-phonon interactions in the electronic structure of an exotic insulating state in the layered dichalcogenide 1T-TaS2, where the charge-density-wave (CDW) order coexists with…

材料科学 · 物理学 2017-07-12 Doohee Cho , Yong-Heum Cho , Sang-Wook Cheong , Ki-Seok Kim , Han Woong Yeom

Topologically protected edge states are the highlight feature of an interface between non-equivalent insulators. The robustness/sensitivity of these states to local single-particle perturbations is well understood, while their stability in…

强关联电子 · 物理学 2025-03-18 Jan Skolimowski , Wojciech Brzezicki

Utilizing infrared vibrational spectroscopy we have investigated dimerized two-dimensional organic salts in order to search for possible charge redistribution that might cause electronic dipoles and ferroelectricity: the quantum spin liquid…

Topological insulators are found in materials that have elements with strong spin orbit interaction. However, electron Coulomb repulsion also potentially generates the topological insulators as well as Chern insulators by the mechanism of…

强关联电子 · 物理学 2014-07-01 Masatoshi Imada , Youhei Yamaji , Moyuru Kurita

Motivated by the recent experimental evidence of commensurate surface charge density waves (CDW) in Pb/Ge(111) and Sn/Ge(111) sqrt{3}-adlayer structures, as well as by the insulating states found on K/Si(111):B and SiC(0001), we have…

强关联电子 · 物理学 2009-10-31 Giuseppe Santoro , Sandro Scandolo , Erio Tosatti

We have studied the tight-binding model for the \alpha-type layered organic conductors, \alpha-(ET)2I3 and \alpha-(BETS)2I3, with a uniform interlayer coupling accompanied by spin-orbit interaction originating from the I3- anion potential.…

强关联电子 · 物理学 2024-11-21 Toshihito Osada

Strong correlation effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half-filling. This typically happens whenever the inter-site Coulomb repulsion induces a tendency…