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相关论文: Edge States in Molecular Solid \alpha-(BEDT-TTF)2I…

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We study the nature of edge states in extrinsically and spontaneously dimerized states of two-dimensional spin-1/2 antiferromagnets, by performing quantum Monte Carlo simulation. We show that a gapless edge mode emerges in the wide region…

强关联电子 · 物理学 2012-12-20 Takafumi Suzuki , Masahiro Sato

We present a theoretical study of a model heterostructure for a Mott-insulator sandwiched between two band insulators, such as SrTiO3/LaTiO3. Particular emphasis is given on the interplay between magnetism and inhomogeneous charge…

强关联电子 · 物理学 2013-02-19 Suguru Ueda , Norio Kawakami , Manfred Sigrist

The two-dimensional organic conductor $\alpha$-(BEDT-TTF)$_2$I$_3$ undergoes a metal-insulator transition at $T_{\rm CO}=135$ K due to electronic charge ordering. We have conducted time-resolved investigations of its electronic properties…

强关联电子 · 物理学 2016-06-15 Tobias Peterseim , Tomislav Ivek , Dieter Schweitzer , Martin Dressel

A detailed investigation of the out-of-plane electrical properties of charge-ordered alpha-(BEDT-TTF)2I3 provides clear evidence for ferroelectricity. Similar to multiferroic alpha-(BEDT-TTF)2Cu[N(CN)2]Cl, the polar order in this material…

强关联电子 · 物理学 2015-06-22 P. Lunkenheimer , B. Hartmann , M. Lang , J. Müller , D. Schweitzer , S. Krohns , A. Loidl

Charge ordering (CO) with long-periodicities in a geometrically frustrated system, theta-(BEDT-TTF)2X, is numerically studied. We consider interacting fermion models on the anisotropic triangular lattice: the extended Hubbard model and the…

强关联电子 · 物理学 2015-06-18 Makoto Naka , Hitoshi Seo

Combined effects of electron correlations and lattice distortions are investigated on the charge ordering in \theta-(BEDT-TTF)2RbZn(SCN)4 theoretically in a two-dimensional 3/4-filled extended Hubbard model with electron-lattice couplings.…

强关联电子 · 物理学 2009-11-13 Satoshi Miyashita , Kenji Yonemitsu

Photoinduced phase transitions and charge dynamics in the interacting Dirac-electron system with a charge-ordered ground state are theoretically studied by taking an organic salt $\alpha$-(BEDT-TTF)$_2$I$_3$. By analysing the extended…

强关联电子 · 物理学 2022-07-21 Yasuhiro Tanaka , Masahito Mochizuki

Topologically protected surface states of three-dimensional topological insulators provide a model framework for studying massless Dirac electrons in two dimensions. Usually a step on the surface of a topological insulator is treated as a…

介观与纳米尺度物理 · 物理学 2019-01-14 N. I. Fedotov , S. V. Zaitsev-Zotov

To determine the impact of including edge states on the phase diagram of a spinless Falicov-Kimball model (FKM) on the Haldane lattice, a study of a corresponding ribbon geometry with zigzag edges is conducted. By varying the ribbon widths,…

强关联电子 · 物理学 2022-09-05 Jan Skolimowski

Motivated by the recent experimental evidence of commensurate surface CDW in Pb/Ge(111) and Sn/Ge(111) $\sqrt{3}$-adlayer structures, as well as by the insulating states found on K/Si(111):B and SiC(0001), we have investigated the role of…

强关联电子 · 物理学 2009-10-31 G. Santoro , S. Sorella , F. Becca , S. Scandolo , E. Tosatti

We address the co-existence of massless and massive topological edge states at the interface between two materials with different topological phases. We modify the well known Bernevig-Hughes-Zhang model to introduce a smooth function…

介观与纳米尺度物理 · 物理学 2020-02-26 Tineke L. van den Berg , M. Reyes Calvo , Dario Bercioux

Many-body calculations of the total energy of interacting Dirac electrons in finite graphene samples exhibit joint occurrence of cusps at angular momenta corresponding to fractional fillings characteristic of formation of incompressible…

介观与纳米尺度物理 · 物理学 2014-11-21 Constantine Yannouleas , Igor Romanovsky , Uzi Landman

We study the effect of electron-electron interaction on the charge and spin structures at the edge of integer quantum Hall liquids, under three different kinds of confining potentials. Our exact diagonalization calculation for small systems…

强关联电子 · 物理学 2015-06-12 Yuhui Zhang , Kun Yang

We consider plane junctions with graphene electrodes, which are formed by a single-level system ("molecule") placed between the edges of two single-layer graphene half planes. We calculate the edge Green functions of the electrodes and the…

介观与纳米尺度物理 · 物理学 2015-06-05 Dmitry A. Ryndyk , Jan Bundesmann , Ming-Hao Liu , Klaus Richter

Systems that can be described with the same mathematical models that account for the properties of electrons in graphene are known as graphene-like systems. These include magnons, photons, polaritons, acoustic waves, and electrons in…

介观与纳米尺度物理 · 物理学 2022-10-17 J. L. Lado , J. Fernández-Rossier

We report a $^{13}$C-NMR study on the ambient-pressure metallic phase of the layered organic conductor $\theta$-(BEDT-TTF)$_{2}$I$_{3}$ [BEDT-TTF: bisethylenedithio-tetrathiafulvalene], which is expected to connect the physics of correlated…

材料科学 · 物理学 2012-05-31 Michihiro Hirata , Kazuya Miyagawa , Kazushi Kanoda , Masafumi Tamura

A tight-binding model for $e_g$ orbitals on a square lattice is investigated. We consider only the nearest-neighbor hopping and the model is characterized by two hopping parameters, $t_1$ and $t_2$. There are Dirac points in the electronic…

强关联电子 · 物理学 2024-08-14 Katsunori Kubo

Several new aspects of the subtle interplay between electronic correlations and disorder are reviewed. First, the dynamical mean-field theory (DMFT)together with the geometrically averaged ("typical") local density of states is employed to…

强关联电子 · 物理学 2015-05-18 K. Byczuk , W. Hofstetter , U. Yu , D. Vollhardt

We investigate the emergence of topological features in the charge excitations of Mott insulators in the Chern-Hubbard model. In the strong correlation regime, treating electrons as the sum of holons and doublons excitations, we compute the…

强关联电子 · 物理学 2025-08-29 Emile Pangburn , Catherine Pépin , Anurag Banerjee

We investigated the interlayer magnetoresistance in an organic massless Dirac electron system $\alpha$-(BEDT-TTF)$_2$I$_3$ under pressure. We experimentally demonstrate that the width of the zero mode owing to carrier scattering is much…

强关联电子 · 物理学 2022-03-23 A. Mori , Y. Kawasugi , R. Doi , T. Naito , R. Kato , Y. Nishio , N. Tajima