中文
相关论文

相关论文: Highly efficient spin transport in epitaxial graph…

200 篇论文

In this work, high field carrier transport in two dimensional (2D) graphene is investigated. Analytical models are applied to estimate the saturation currents in graphene, based on the high scattering rate of optical phonon emission.…

材料科学 · 物理学 2011-09-13 Tian Fang , Aniruddha Konar , Huili Xing , Debdeep Jena

A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework…

材料科学 · 物理学 2007-05-23 R. Lipperheide , U. Wille

In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which…

Graphitic nanostructures, e.g. carbon nanotubes (CNT) and graphene, have been proposed as ideal materials for spin conduction[1-7]; they have long electronic mean free paths[8] and small spin-orbit coupling[9], hence are expected to have…

介观与纳米尺度物理 · 物理学 2007-12-05 Sungjae Cho , Yung-Fu Chen , Michael S. Fuhrer

Future multi-functional hybrid devices might combine switchable molecules and 2D material-based devices. Spin-crossover compounds are of particular interest in this context since they exhibit bistability and memory effects at room…

介观与纳米尺度物理 · 物理学 2017-04-05 J. Dugay , M. Aarts , M. Giménez-Marqués , T. Kozlova , H. W. Zandbergen , E. Coronado , H. S. J van der Zant

We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS$_2$ and graphene. This heterostructure combines the benefits of a direct gap…

The formation of graphene on any desirable substrate is extremely essential for the successful replacement of Si with graphene in all technological applications in the beyond-CMOS era. Recently, we observed that a Ti layer formed on…

材料科学 · 物理学 2010-05-27 A. Hashimoto , H. Terasaki , K. Morita , H. Hibino , S. Tanaka

Functional manipulation of graphene is an important topic in view of both fundamental researches and practical applications. In this study, we show that intercalation of 5$d$ transition metals in epitaxial graphene on SiC is a promising…

介观与纳米尺度物理 · 物理学 2019-03-06 Minsung Kim , Cai-Zhuang Wang , Michael C. Tringides , Myron Hupalo , Kai-Ming Ho

Further development of the field of all-electric spintronics requires the successful integration of spin transport channels with spin injector/generator elements. While with the advent of graphene and related 2D materials high performance…

介观与纳米尺度物理 · 物理学 2016-03-30 Kristina Vaklinova , Alexander Hoyer , Marko Burghard , Klaus Kern

There is a renewed interest to study spin-polarized transport and spin dynamics in various electronic materials. The motivation to examine the spin degrees of freedom (mostly in electrons, but also in holes and nuclei) comes from various…

凝聚态物理 · 物理学 2007-05-23 Igor Zutic

Graphene grown epitaxially on SiC has been proposed as a material for carbon-based electronics. Understanding the interface between graphene and the SiC substrate will be important for future applications. We report the ability to image the…

Spintronics involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. The fascinating spin-resolved properties of graphene motivate numerous researchers into the studies of spintronics in…

材料科学 · 物理学 2015-06-03 Yangyang Wang , Ruge Quhe , Dapeng Yu , Ju Li , Jing Lu

Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron spin. While graphene is very promising for spin communication due to its extraordinary electron…

介观与纳米尺度物理 · 物理学 2017-06-08 Ahmet Avsar , Jun You Tan , Marcin Kurpas , Martin Gmitra , Kenji Watanabe , Takashi Taniguchi , Jaroslav Fabian , Barbaros Ozyilmaz

Transporting ensembles of electrons over long distances without losing their spin polarization is an important benchmark for spintronic devices. It requires usually to inject and to probe spin polarized electrons in conduction channels…

介观与纳米尺度物理 · 物理学 2017-06-28 B. Bertrand , S. Hermelin , S. Takada , M. Yamamoto , S. Tarucha , A. Ludwig , A. D. Wieck , C. Bäuerle , T. Meunier

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on…

Departing from the conventional view on superconducting vortices as a parasitic source of dissipation for charge transport, we propose to use mobile vortices as topologically-stable information carriers for spin transport. To this end, we…

介观与纳米尺度物理 · 物理学 2018-11-01 Se Kwon Kim , Roberto Myers , Yaroslav Tserkovnyak

In this review we discuss spin and charge transport properties in graphene-based single-layer and few-layer spin-valve devices. We give an overview of challenges and recent advances in the field of device fabrication and discuss two of our…

介观与纳米尺度物理 · 物理学 2016-02-24 F. Volmer , M. Drögeler , G. Güntherodt , C. Stampfer , B. Beschoten

We study the generation of non-equilibrium spin currents in systems with spatially-inhomogeneous magnetic potentials. For sufficiently high current densities, the spin polarization can be transported over distances significantly exceeding…

凝聚态物理 · 物理学 2009-11-07 Ivar Martin

We propose the idea of a "spinguide", i.e. the semiconductor channel which is surrounded with walls from the diluted magnetic semiconductor (DMS) with the giant Zeeman splitting which are transparent for electrons with the one spin…

介观与纳米尺度物理 · 物理学 2009-11-07 R. N. Gurzhi , A. N. Kalinenko , A. I. Kopeliovich , A. V. Yanovsky

Graphene nanoribbons and constrictions are envisaged as fundamental components of future carbon-based nanoelectronic and spintronic devices. At nanoscale, electronic effects in these devices depend heavily on the dimensions of the active…