相关论文: Active control of magnetoresistance of organic spi…
Magnetoelectric coupling has been a trending research topic in both organic and inorganic materials and hybrids. The concept of controlling magnetism using an electric field is particularly appealing in energy efficient applications. In…
We derive kinetic equations describing injection and transport of spin polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined…
Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…
The aim of voltage control of magnetism is to reduce the power consumption of spintronic devices. For a spin valve, the magnetization directions of two ferromagnetic layers determine the giant magnetoresistance magnitude. However, achieving…
Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…
We report the results of magnetoresistance measurements in vertical organic spin valves with the magnetic field oriented perpendicular to the layer stack. The magnetoresistance measurements were performed after carefully preparing either…
By means of ab initio calculations and spin-polarized scanning tunneling microscopy experiments we show how to manipulate the local spin-polarization of a ferromagnetic surface by creating a complex energy dependent magnetic structure. We…
Altermagnets, with spin splitting and vanishing magnetization, have been attributed to many fascinating phenomena and potential applications. In particular, integrating ferroelectricity with altermagnetism to enable magnetoelectric coupling…
The electric resistance of ferromagnet/normal-metal/ferromagnet perpendicular spin valves depends on the relative angle between the magnetization directions. In contrast to common wisdom, this angular magnetoresistance is found to be not…
A fabrication process for vertical organic spin-valve devices has been developed which offers the possibility to achieve active device areas of less than 500x500 nm^2 and is flexible in terms of material choice for the active layers.…
We propose a spin valve that is based on van der Waals antiferromagnetism and fully electrically controlled. The device is composed of two antiferromagnetic terminals that allow for vertical bias control and a linked central scattering…
We observe and analyze tunable relaxation of a pure spin current by an antiferromagnet in spin-valves. This is achieved by carefully controlling the angle between a resonantly excited ferromagnetic layer pumping the spin current and the…
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…
Spin-valve structures in which a change of magnetic configuration is responsible for magnetoresistance have enabled impressive advances in spintronics, focusing on magnetically storing and sensing information. However, this mature…
Organic semiconductors find increasing importance in spin transport devices due to the modulation and control of their properties through chemical synthetic versatility. The organic materials are used as interlayers between two ferromagnet…
In this paper we review the recent field of organic spintronics, where organic materials are applied as a medium to transport and control spin-polarized signals. The contacts for injecting and detecting spins are formed by metals, oxides,…
A model of a spin valve in which electron transport between the magnetized electrodes is due to multistep tunneling is analyzed. Motivated by recent experiments on organic spin valves, we assume that spin memory loss in the course of…
Non-equilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schr\"odinger equation for electron tunneling in the presence…
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…
We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces.…