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Energy conservative devices are the need of the modern technology which leads to the development of reversible logic. The synthesis of reversible logic has become an intensely studied area as it overcomes the problem of power dissipation…

新兴技术 · 计算机科学 2016-10-20 Sadia Nowrin , Papiya Nazneen , Lafifa Jamal

The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these…

We experimentally demonstrate an optical controlled-NOT (CNOT) gate with arbitrary single inputs based on a 4-photon 6-qubit cluster state entangled both in polarization and spatial modes. We first generate the 6-qubit state, and then by…

In this article, we proposed a Variable threshold MOSFET(VTMOS)approach which is realized from Dynamic Threshold MOSFET(DTMOS), suitable for sub-threshold digital circuit operation. Basically the principle of sub- threshold logics is…

其他计算机科学 · 计算机科学 2010-07-15 K. Ragini , M. Satyam , B. C. Jinaga

Fault-tolerant quantum computation requires minimizing non-Clifford gates, whose implementation via magic state distillation dominates the resource costs. While $T$-count minimization is well-studied, dedicated $CCZ$ factories shift the…

量子物理 · 物理学 2026-02-18 Kirill Khoruzhii , Patrick Gelß , Sebastian Pokutta

We propose high-fidelity controlled-NOT (CNOT) gates in a hybrid system of polar molecules and Rydberg atoms based on the unconventional Rydberg pumping mechanism. By combining the rich internal structure of polar molecules with the strong…

量子物理 · 物理学 2026-04-01 Yi-Han Bai , Yue Wei , Chi Zhang , Weibin Li , Xiao-Qiang Shao

We numerically study the implementation of a universal two-qubit gate set, composed of CNOT, Hadamard, phase and $\pi/8$ gates, for transmon-based systems. The control signals to implement such gates are obtained using the Chopped Random…

量子物理 · 物理学 2022-07-28 Hervè Atsè Corti , Leonardo Banchi , Alessandro Cidronali

The successful detection of biomolecules by a Field Effect Transistor-based biosensor (BioFET) is dictated by the sensor's intrinsic Signal-to-Noise Ratio (SNR). The detection limit of a traditional BioFET is fundamentally limited by…

应用物理 · 物理学 2019-07-24 Nicolò Zagni , Paolo Pavan , Muhammad Ashraf Alam

Negative capacitance (NC) in ferroelectrics, which stems from the imperfect screening of polarization, is considered a viable approach to lower voltage operation in the field-effect transistors (FETs) used in logic switches. In this paper,…

介观与纳米尺度物理 · 物理学 2017-08-07 Kwok Ng , Steven J. Hillenius , Alexei Gruverman

Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…

材料科学 · 物理学 2026-04-22 Chankeun Yoon , Juhan Ahn , Yuchen Zhou , Jaydeep P. Kulkarni , Ananth Dodabalapur

The limitations of conventional conductive agents in lithium-ion batteries, such as carbon black and graphite flakes, have driven the search for high-performance alternatives. Carbon nanotubes (CNTs) and graphene offer exceptional…

Compute-in-memory (CiM) is a promising solution for addressing the challenges of artificial intelligence (AI) and the Internet of Things (IoT) hardware such as 'memory wall' issue. Specifically, CiM employing nonvolatile memory (NVM)…

新兴技术 · 计算机科学 2024-01-11 Yifei Zhou , Xuchu Huang , Jianyi Yang , Kai Ni , Hussam Amrouch , Cheng Zhuo , Xunzhao Yin

Carbon nanotubes are a fraction of the size of transistors used in today's best microchips, as it could reduce power demands and heating in next electronics revolution. Present study investigates the electronic and magnetic structure of…

We have performed numerical modeling of dual-gate ballistic n-MOSFET's with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a…

介观与纳米尺度物理 · 物理学 2009-10-31 Y. Naveh , K. K. Likharev

Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a…

This letter reports on the realization of logic circuits employing solution-processed networks of single-walled carbon nanotubes. We constructed basic logic gates (inverter, NAND and NOR) with n- and p-type field-effect transistors…

材料科学 · 物理学 2009-11-13 Ryo Nouchi , Haruo Tomita , Akio Ogura , Masashi Shiraishi , Hiromichi Kataura

Current Artificial Intelligence (AI) computation systems face challenges, primarily from the memory-wall issue, limiting overall system-level performance, especially for Edge devices with constrained battery budgets, such as smartphones,…

硬件体系结构 · 计算机科学 2024-10-15 Lucas Huijbregts , Liu Hsiao-Hsuan , Paul Detterer , Said Hamdioui , Amirreza Yousefzadeh , Rajendra Bishnoi

Massive MIMO systems have the potential to significantly enhance spectral efficiency, yet their widespread integration is hindered by the high power consumption of the underlying computations. This paper explores the applicability and…

信号处理 · 电气工程与系统科学 2025-09-09 Mikael Rinkinen , Mehdi Safarpour , Shahriar Shahabuddin , Olli Silven , Lauri Koskinen

Integrated circuits (ICs) that can operate at high temperature have a wide variety of applications in the fields of automotive, aerospace, space exploration, and deep-well drilling. Conventional silicon-based complementary…

应用物理 · 物理学 2021-06-21 Mitsuaki Kaneko , Masashi Nakajima , Qimin Jin , Tsunenobu Kimoto

As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon…

材料科学 · 物理学 2007-05-23 Pengfei Qi , Ali Javey , Marco Rolandi , Qian Wang , Erhan Yenilmez , Hongjie Dai