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The interplay between magnetic field and microwave applied in a single-electron transistor(SET) has a profound influence on the Kondo effect, as shown in a recent experiment[B. Hemingway, S. Herbert, M. Melloch and A. Kogan,…

强关联电子 · 物理学 2013-06-26 Zhan Cao , Chen Cheng , Fu-Zhou Chen , Hong-Gang Luo

We study the non-equilibrium regime of the Kondo effect in a quantum dot laterally coupled to a narrow wire. We observe a split Kondo resonance when a finite bias voltage is imposed across the wire. The splitting is attributed to the…

介观与纳米尺度物理 · 物理学 2007-05-23 S. De Franceschi , R. Hanson , W. G. van der Wiel , J. M. Elzerman , J. J. Wijpkema , T. Fujisawa , S. Tarucha , L. P. Kouwenhoven

The joint effect of the electron-phonon interaction and Kondo effect on the nonequilibrium transport through the single molecule transistor is investigated by using the improved canonical transformation scheme and extended equation of…

介观与纳米尺度物理 · 物理学 2016-08-16 Zuo-Zi Chen , Haizhou Lu , Rong Lü , Bang-fen Zhu

We theoretically study the intraband transition spectrum of single electron transistors (SETs) composed of individual self-assembled quantum dots. The polarization of SETs is obtained by using the nonequilibrium Green's function technique…

介观与纳米尺度物理 · 物理学 2009-11-11 David M. -T. Kuo

The effect of a magnetic field on the equilibrium spectral and transport properties of a single-molecule junction is studied using the numerical renormalization group method. The molecule is described by the Anderson-Holstein model in which…

强关联电子 · 物理学 2007-05-23 P. S. Cornaglia , D. R. Grempel

Using a time-dependent Anderson Hamiltonian, a quantum dot with an ac voltage applied to a nearby gate is investigated. A rich dependence of the linear response conductance on the external frequency and driving amplitude is demonstrated. At…

介观与纳米尺度物理 · 物理学 2007-05-23 Peter Nordlander , Ned S. Wingreen , Yigal Meir , David C. Langreth

The out-of-equilibrium electron transport of carbon nanotube semiconducting quantum dot placed in a magnetic field is studied in the Kondo regime by means of the non-equilibrium Green functions. The equation of motion method is used. For…

介观与纳米尺度物理 · 物理学 2009-01-27 D. Krychowski , S. Lipinski

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…

介观与纳米尺度物理 · 物理学 2012-05-17 Benoît Roche , Benoit Voisin , Xavier Jehl , Romain Wacquez , Marc Sanquer , Maud Vinet , Veeresh Deshpande , Bernard Previtali

The mechanism of the magneto-Coulomb oscillation in ferromagnetic single electron transistors (SET's) is theoretically considered. Variations in the chemical potentials of the conduction electrons in the ferromagnetic island electrode and…

介观与纳米尺度物理 · 物理学 2009-10-30 Hiroshi Shimada , Keiji Ono , Youiti Ootuka

Starting from the Kubo formula for conductance, we calculate the frequency-dependent response of a single-electron transistor (SET) driven by an ac signal. Treating tunneling processes within the lowest order approximation, valid for a wide…

介观与纳米尺度物理 · 物理学 2010-02-03 M. A. Laakso , T. Ojanen , T. T. Heikkila

Non-equilibrium Green's function technique has been used to calculate spin-dependent electronic transport through a quantum dot in the Kondo regime. The dot is described by the Anderson Hamiltonian and is coupled either symmetrically or…

其他凝聚态物理 · 物理学 2009-11-11 R. Swirkowicz , M. Wilczynski , J. Barnas

We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a…

介观与纳米尺度物理 · 物理学 2007-05-23 D. M. Schröer , A. K. Hüttel , K. Eberl , S. Ludwig , M. N. Kiselev , B. L. Altshuler

Nonequilibrium electronic transport through a quantum dot coupled to ferromagnetic leads (electrodes) is studied theoretically by the nonequilibrium Green function technique. The system is described by the Anderson model with arbitrary…

介观与纳米尺度物理 · 物理学 2009-11-11 R. Swirkowicz , M. Wilczynski , J. Barnas

We employ the time-dependent non-crossing approximation to study the time averaged conductance for a single electron transistor in the Kondo regime when the dot level is sinusoidally driven from its equilibrium position by means of a gate…

介观与纳米尺度物理 · 物理学 2009-11-13 Ali Goker

We derive an exact expression for the differential conductance for a quantum dot in an arbitrary magnetic field for small bias voltage. The derivation is based on the symmetric Anderson model using renormalized perturbation theory and is…

强关联电子 · 物理学 2009-11-11 A. C. Hewson , J. Bauer , A. Oguri

We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two…

Molecular electronic devices currently serve as a platform for studying a variety of physical phenomena only accessible at the nanometer scale. One such phenomenon is the highly correlated electronic state responsible for the Kondo effect,…

介观与纳米尺度物理 · 物理学 2015-03-13 Gavin D. Scott , Douglas Natelson

We study the nonequilibrium spin transport through a quantum dot containing two spin levels coupled to the magnetic electrodes. A formula for the spin-dependent current is obtained and is applied to discuss the linear conductance and…

介观与纳米尺度物理 · 物理学 2009-11-07 Ping Zhang , Qi-Kun Xue , Yu-Peng Wang , X. C. Xie

Motivated by recent experiments, we consider a single-electron transistor in the Kondo regime which is coupled to three leads in the presence of large bias voltages. Such a steady-state non-equilibrium system is to a large extent governed…

介观与纳米尺度物理 · 物理学 2016-08-31 N. Shah , A. Rosch

We report on magneto-oscillations in differential resistivity of a two-dimensional electron system subject to intense microwave radiation. The period of these oscillations is determined not only by microwave frequency but also by its…

介观与纳米尺度物理 · 物理学 2010-05-31 M. Khodas , H. -S. Chiang , A. T. Hatke , M. A. Zudov , M. G. Vavilov , L. N. Pfeiffer , K. W. West
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