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We compare modulator designs on thick-film and thin-film silicon-on-insulator (SOI) substrates based on the carrier-depletion effect. This effect exhibits a lower junction capacitance as compared to its injection counterparts, leading to a…

In this paper, an all-optical logic scheme which exploits the cross-phase modulation (XPM) effect in semiconductor-optical-amplifier-assisted Mach-Zehnder Interferometer (SOA-MZI), is proposed, performance analyzed and parameters optimized.…

In high-performance RF photonic systems, the Electro-Optic (EO) modulators play a critical role as a key component, requiring low SWaP-C and high linearity. While traditional lithium niobate (LiNbO$_3$) Mach-Zehnder Modulators (MZMs) have…

Recent progress in silicon-based photonic integrated circuits (PICs) have opened new avenues for analog circuit designers to explore hybrid integration of photonics with CMOS ICs. Traditionally, optoelectronic systems are designed using…

A high-modulation-efficiency optical modulator integrated on silicon (Si) is a key enabler for low-power and high-capacity optical interconnects. However, Si-based optical modulators suffer from low phase modulation efficiency owing to the…

We report on compact and efficient silicon-organic hybrid (SOH) Mach-Zehnder modulators (MZM) with low phase shifter insertion loss of 0.7 dB. The 280 $\mu$m-long phase shifters feature a $\pi$-voltage-length product of 0.41 Vmm and a…

Electro-optic modulators provide a key function in optical transceivers and increasingly in photonic programmable Application Specific Integrated Circuits (ASICs) for machine learning and signal processing. However, both foundry ready…

On-chip high extinction ratio Mach-Zehnder interferometers (MZI) have always attracted interest from researchers as it can be used in many applications in astrophotonics, optical switching, programmable photonic circuits, and quantum…

Broadband integrated thin-film lithium niobate (TFLN) electro-optic modulators (EOM) are desirable for optical communications and signal processing in both the O-band (1310 nm) and C-band (1550 nm). To address these needs, we design and…

High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film…

We present an optimized Mach-Zehnder Interferometer (MZI) with phase change materials for photonic neural networks (PNNs). With 0.2 dB loss, -38 dB crosstalk, and length of 52 micrometer, the designed MZI significantly improves the…

Photonic integrated circuits have become essential for meeting the growing global demand for high-capacity information processing and transport. Assessing their radiation tolerance is essential for deploying systems in radiation prone…

Stable narrow-linewidth light sources play a significant role in many precision optical systems. Electro-optic laser frequency stabilization systems, such as the well-known Pound-Drever-Hall (PDH) technique, have been key components of…

We describe a resonantly enhanced Mach-Zehnder modulator (MZM) that can be operated over a wide temperature range of 55C without being actively biased, while providing a significant resonant enhancement of 6.8 at the nominal wavelength /…

An energy/area-efficient low-cost broadband linearity enhancement technique for electro-optic micro-ring modulators (MRM) is proposed to achieve 6.1-dB dynamic linearity improvement in spurious-free-dynamic-range with intermodulation…

An integrated hybrid thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulator (MZM) is shown at near-infrared wavelengths. The design uses TFLN bonded to planarized silicon nitride waveguide circuits, and does not require…

High-speed photonic integrated circuits leveraging the thin-film lithium niobate (TFLN) platform present a promising approach to address the burgeoning global data traffic demands. As a pivotal component, TFLN-based electro-optic (EO)…

In this work, we discuss two phase-measurement methods for the Mach-Zehnder interferometer (MZI) in the presence of internal losses and give the corresponding optimum conditions. We find theoretically that when the core parameters…

The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can…

High modulation efficiency and a compact footprint are critical for next-generation electro-optic (EO) modulators. We introduce a new class of non-resonant recirculating phase modulators (PMs) that boosts modulation efficiency by repeatedly…