High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer
Abstract
A high-modulation-efficiency optical modulator integrated on silicon (Si) is a key enabler for low-power and high-capacity optical interconnects. However, Si-based optical modulators suffer from low phase modulation efficiency owing to the weak plasma dispersion effect in Si. Therefore, it is essential to find a novel modulation scheme that is compatible with a Si photonics platform. Here, we demonstrate an InGaAsP/Si hybrid metal-oxide-semiconductor (MOS) optical modulator with a Mach-Zehnder interferometer (MZI) formed by direct wafer bonding with an Al2O3 bonding interface. Electron accumulation at the InGaAsP MOS interface enables the extraction of the electron-induced refractive index change in InGaAsP, which is significantly greater than that in Si. The presented modulator exhibits a phase modulation efficiency of 0.047 Vcm, which is approximately 5 times higher than that of Si MOS optical modulators. This approach provides a new efficient scheme of phase modulation on a Si photonics platform for low-power, high-speed, and high-density optical links.
Keywords
Cite
@article{arxiv.1702.02245,
title = {High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer},
author = {Jae-Hoon Han and Frederic Boeuf and Shinichi Takagi and Mitsuru Takenaka},
journal= {arXiv preprint arXiv:1702.02245},
year = {2017}
}
Comments
21 pages, 5 figures for the main manuscript. 22 pages, 16 figures for the supplementary