相关论文: Low-dimensionality energy landscapes: Magnetic swi…

Using numerical and analytical micromagnetics we calculated the switching fields and energy barriers of the composite (exchange spring) magnetic recording media, which consist of layers with high and low magnetocrystalline anisotropy. We…

We generalize domain-wall dynamics to the case of translationally noninvariant ferromagnetic nanowires. The obtained equations of motion make the description of the domain-wall propagation more realistic by accounting for the variations…

For viable applications, spintronic devices based e.g. on domain wall motion need to be highly reliable with stable magnetization states and highly reproducible switching pathways transforming one state to another. The existence of multiple…

We investigate magnetization reversal processes of magnetic nanorings. Using a recently developed efficient cartesian coordinates fast multipole method, magnetization switching phase diagrams are constructed for such structures. We find…

The dynamics of a domain wall in magnetostrictive materials is investigated. The domain wall is modeled by a d-dimensional interface moving in a d+1-dimensional environment. Long-range demagnetization effects and quenched disorder are…

It has recently been suggested that exchange spring media offer a way to increase media density without causing thermal instability (superparamagnetism), by using a hard and a soft layer coupled by exchange. Victora has suggested a figure…

We present a new and efficient method for computing the transition pathways, free energy barriers, and transition rates in complex systems with relatively smooth energy landscapes. The method proceeds by evolving strings, i.e. smooth curves…

Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…

We propose a method, which enables precise control of magnetic patterns, relying only on the fundamental properties of the wire and the choice of the path in the controlled parameter space but not on the rate of motion along this path.…

Existing data for soft magnetic materials of critical current for domain-wall motion, wall speed driven by a magnetic field, and wall electrical resistance, show that all three observable properties are related through a single parameter:…

A closed form analytical expression for the magnetization vector distribution within the cross-tie domain wall in an isotropic ferromagnetic thin film is given. The expression minimizes the exchange energy functional exactly, and the…

A major impediment to a more complete understanding of barrier crossing and other single-molecule processes is the inability to directly visualize the trajectories and dynamics of atoms and molecules in reactions. Rather, the kinetics are…

Magnetic nanomaterials record information as fast as picoseconds in computer memories but retain it for millions of years in ancient rocks. This exceedingly broad range of times is covered by hopping over a potential energy barrier through…

Domain wall (DW) motion is a crucial process involved in magnetization reversal, be it under magnetic field or spin-polarized current stimulus. In most cases DW speed does not exceed $\approx$100m/s and collapses above a given threshold of…

Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in…

Magnetic domain wall motion is at the heart of new magneto-electronic technologies and hence the need for a deeper understanding of domain wall dynamics in magnetic systems. In this context, numerical simulations using simple models can…

We study magnetic domain walls in double exchange materials. The domain wall width is proportional to the square root of the stiffness. In the double exchange model the stiffness has two terms: the kinetic energy and the Hartree term. The…

Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…

To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…

The connection of strength of magnetic interactions and type ordering the magnetic moments with crystal chemical characteristics in low-dimensional magnets is investigated. The new method to calculate the sign and relative strength of…