相关论文: Spin injection from a half-metal at finite tempera…

The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is…

Fabricating room-temperature ferromagnetic insulators, which are crucial candidates for next-generation dissipation-free quantum and spintronic devices, remains a significant challenge. In this Letter, we report on the epitaxial synthesis…

Spintronics is expected as the next-generation technology based on the novel notch of spin degree of freedom of electrons. Half metals, a class of materials which behave as a metal in one spin direction and an insulator in the opposite spin…

We consider a heterostructure consisting of a normal metal and a superconductor separated by a spin-active interface. At finite-bias voltages, spin-filtering and spin-mixing effects at the interface allow for an induced magnetization (spin…

Creating, manipulating and detecting spin polarized carriers are the key elements of spin based electronics. Most practical devices use a perpendicular geometry in which the spin currents, describing the transport of spin angular momentum,…

A theoretical formulation for spin transport through an antiferromagnetic (AF) insulator is presented in the case driven/detected by direct/inverse spin Hall effect in two heavy metal contacts. The spin signal is shown to be transferred by…

Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of…

Spin filtering is a fundamental operation in spintronics, enabling the generation and detection of spin-polarized carriers. Here, we proposed and theoretically demonstrated that a 3d transition metal (TM) doped silicon quantum dot (SiQD) is…

Spin-polarized transport is investigated in normal metal-superconductor (NS) junctions as a function of interface transmissivity as well as temperature when the density of states of a superconductor is Zeeman-split in response to an…

The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting…

Many proposed and realized spintronic devices involve spin injection and accumulation at an interface between a ferromagnet and a non-magnetic material. We examine the electric field, voltage profile, charge distribution, spin fluxes, and…

In this paper, based on the formulation of an O(3) non-linear sigma model, we study the two-dimensional Pi-flux Hubbard model at half-filling. A quantum non-magnetic insulator is explored near the metal-insulator transition that may be a…

The double perovskite material \SFMO has the rare and desirable combination of a half-metallic ground state with 100% spin polarization and ferrimagnetic \Tc$\simeq 420$K, well above room temperature. In this two-part paper, we present a…

We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when…

A comparison is made between the degree of spin polarization of electrons excited by one- and two-photon absorption of circularly polarized light in bulk zincblende semiconductors. Time- and polarization-resolved experiments in…

We present a consistent microscopic study of spin pumping effects for both metallic and insulating ferromagnets. As for metallic case, we present a simple quantum mechanical picture of the effect as due to the electron spin flip as a result…

We compute the spin-active scattering matrix and the local spectrum at the interface between a metal and a three-dimensional topological band insulator. We show that there exists a critical incident angle at which complete (100%) spin flip…

By means of parallel tempering Monte Carlo simulations we find strong evidence for a finite-temperature spin-glass transition in a system of diluted classical Heisenberg dipoles randomly placed on the sites of a simple cubic lattice. We…

We report that an ultra-thin, post-oxidized aluminum epilayer grown on the AlGaAs surface works as a high-quality tunnel barrier for spin injection from a ferromagnetic metal to a semiconductor. One of the key points of the present…

We show that the injection of a pure spin current (not accompanied by charge current) into a ring can induce a circulating charge current in the ring, provided that transport coefficients of the ring are spin-dependent and inhomogeneous. As…