相关论文: On melting of silicon carbide under pressure

The pressure dependence of melting temperatures for boron carbide and B4C-carbon eutectic has been studied up to 8 GPa, and it was found that in both cases the melting curves exhibit negative slope (-13\pm6 K/GPa), that is indicative of…

Melting of orthorhombic boron silicide B6Si has been studied at pressures up to 8 GPa using in situ electrical resistivity measurements and quenching. It has been found that in the 2.6-7.7 GPa range B6Si melts congruently, and the melting…

The melting curve of pure silica (SiO$_2$) was determined using {\it ab initio} density functional theory together with the solid-liquid coexisting approach, thermodynamic integration and the Z method. The melting curves are consistent with…

Melting of cubic boron phosphide, BP has been studied at pressures to 9 GPa using synchrotron X-ray diffraction and electrical resistivity measurements. It has been found that above 2.6 GPa BP melts congruently, and the melting curve…

Recent experiments have obtained the melting line of sodium up to pressures of about 130 GPa, finding that the melting line from the {\em bcc} phase reaches a maximum at a temperature of {\em c.a.} 1000 K and a pressure of 31 GPa, and at…

Silicon carbide is a hard, semiconducting material presenting many polytypes, whose behavior under extreme conditions of pressure and temperature has attracted large interest. Here we study the mechanical properties of 3C-SiC over a wide…

Experiments at 6-12 GPa showed that San Carlos olivine surrounded by carbon melts incongruently at 1400 C and higher temperatures, producing olivine with lower Fe contents, pyroxene, carbide, and carbonate melt. The relatively low melting…

The melting curve of Ni up to 100 GPa has been calculated using first principles methods based on density functional theory (DFT). We used two complementary approaches: i) coexistence simulations with a reference system and then free energy…

The melting point of silicon in the cubic diamond phase is calculated using the random phase approximation (RPA). The RPA includes exact exchange as well as an approximate treatment of local as well as non-local many body correlation…

Melting experiments require rapid data acquisition due to instabilities of the molten sample and optical drifting due to the high required laser power. In this work, the melting curve of zirconium has been determined for the first time up…

Thermal stability of silicene and thin silicon films is studied by molecular dynamics using two machine-learning potentials, SNAP and GAP. For SNAP potential, systems ranging from a single silicene layer to films of 36 layers are…

Recent reports of the melting curve of sodium at high pressure have shown that it has a very steep descent after a maximum of around 1000K at 31 GPa. This is not due to a phase transition. According to the Lindemann criterion, this…

Silicon carbide (SiC) is an important technological material, but its high-temperature phase diagram has remained unclear due to conflicting experimental results about congruent versus incongruent melting. Here, we employ large-scale…

Melting of rhombohedral boron subnitride B13N2 has been studied in situ at pressures to 8 GPa using synchrotron X-ray diffraction and electrical resistivity measurements. It has been found that above 2.6 GPa B13N2 melts incongruently, and…

The thermo-mechanical properties of silicon make it of significant interest as a possible material for mirror substrates and suspension elements for future long-baseline gravitational wave detectors. The mechanical dissipation in 92um thick…

Melting of boron subphosphide (B12P2) to 26 GPa has been studied by in situ synchrotron X-ray powder diffraction in a laser-heated diamond anvil cell, and by quenching and electrical resistance measurements in a toroid-type high-pressure…

The electrical conductivity of melts of boron and its carbide (B4C), nitride (BN), and phosphide (BP) has been studied at pressures to 7.7 GPa and temperatures to 3500 K. It has been shown that these melts are good conductors with specific…

In this paper we present the temperature-dependent emissivity of a silicon sample, estimated from its cool-down curve in a constant low temperature environment ($\approx$ 82K). The emissivity value follow a linear dependency in the 120-260…

We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K…

The phase diagram of Zn has been explored up to 140 GPa and 6000 K, by combining optical observations, x-ray diffraction, and ab-initio calculations. In the pressure range covered by this study, Zn is found to retain a hexagonal…