相关论文: Realization of spin gapless semiconductors: the He…
Spin gapless semiconductors exhibit a finite band gap for one spin channel and closed gap for other spin channel, emerged as a new state of magnetic materials with a great potential for spintronic applications. The first experimental…
Since the prediction of spin-gapless semiconducting behaviour in the Heusler compound Mn$_2$CoAl, evidence of spin-gapless behaviour in thin films has typically been inferred from magnetotransport measurements. The spin gapless state is…
Spin gapless semiconductors (SGS) form a new class of magnetic semiconductors, which has a band gap for one spin sub band and zero band gap for the other, and thus are useful for tunable spin transport based applications. In this paper, we…
The structure, magnetic and transport properties of thin films of the Heusler ferrimagnet Mn_{2}CoAl have been investigated for properties related to spin gapless semiconductors. Oriented films were grown by molecular beam epitaxy on GaAs…
This work reports on the band structure and magneto-transport investigations of the inverse Heusler compound Fe2CoSi. The first-principles calculations reveal that Fe2CoSi has a very peculiar band structure with a conducting property in the…
The crystal structure, electronic and magnetic properties of the new full-Heusler compounds Zr2MnZ (Z=Al, Ga, In), were studied within the Density Functional Theory (DFT) framework. The materials exhibit unique properties that connect the…
Despite a plethora of materials suggested for spintronic applications, a new class of materials has emerged, namely spin gapless semiconductors (SGS), that offers potentially more advantageous properties than existing ones. These magnetic…
Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors…
Magnetic and electronic transport properties of Co$_2$MnZ (Z = Al, Ga, Ge, Si, Sn) Heusler alloys were experimentally investigated. Electrical resistivity, in the temperature range from 4.2 to 300 K, as well as field dependences of the Hall…
We report experimental and theoretical investigations on the quaternary Heusler alloy CoRuTiGe, synthesized using the arc melting technique. Crystal structure analysis reveals a tetragonal structure at room temperature. Magnetization…
Spin gapless semiconductor (SGS) has attracted long attention since its theoretical prediction, while concrete experimental hints are still lack in the relevant Heusler alloys. Here in this work, by preparing the series alloys of…
We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a…
Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a…
We report the magnetic and magnetotransport properties of the layered CaAl$_2$Si$_2$-type diluted magnetic semiconductor (Ba$_{1-x}$K$_x$)(Cd$_{1-y}$Mn$_y$)$_2$As$_2$ over a broad Mn (spin) substitution range of $0.05 \le y \le 0.5$. K…
Intermetallic Heusler alloys are amongst the most attractive half-metallic systems due to the high Curie temperatures and the structural similarity to the binary semiconductors. In this review we present an overview of the basic electronic…
Spin gapless semiconductors based Heusler alloys are the special class of materials due to their unique band structure, high spin polarization and high Curie temperature. These materials exhibit a distinct electronic structure: a nonzero…
In this work, we report the structural, magnetic and electrical and thermal transport properties of the Heusler-type alloy Ru2NbAl. From the detailed analysis of magnetization data, we infer the presence of superparamagnetically interacting…
Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin…
The search for high-performance spintronic materials motivates the exploration of Heusler alloys with unconventional electronic properties. Using density functional theory with Hubbard correction (DFT+$U$, $U = 4$ eV), we investigate…
Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical…