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Upconversion of sub-band-gap photons constitutes a promising way for improving the efficiency of silicon-based solar cells beyond the Shockley-Queisser limit. 1500 to 980 nm upconversion by trivalent erbium ions is well-suited for this…

We report a significant enhancement of room-temperature photoluminescence from trivalent erbium-doped (Er3+) silicon nitride (Si3N4) metasurfaces at the telecommunication wavelength prepared via ion implantation. The metasurfaces,…

光学 · 物理学 2026-05-05 Fengkai Wei , Xinru Ji , Tobias J. Kippenberg , Duk-Yong Choi , Carsten Ronning

We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with…

On-chip erbium-doped optical amplifiers and lasers are essential for realizing fully integrated active silicon photonic circuits, but their performance has been limited by the low gain of amorphous host materials and the difficulty of…

We report on very high enhancement of thin layer's absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show…

Prior studies have shown that photoluminescence from Er3+ impurities in silicon is severely limited at room temperature by non-radiative relaxation and solid solubility; and room temperature emission from Er3+ in oxide-based hosts becomes…

材料科学 · 物理学 2012-02-06 Sufian Abedrabbo , Anthony Fiory

Erbium-doped fiber amplifiers have revolutionized long-haul optical communications and laser technology. Erbium ions could equally provide a basis for efficient optical amplification in photonic integrated circuits. However, this approach…

Theoretically and experimentally we have proved the existence of optimal thickness of the porous layer used as an anti-reflection coating in solar cells. We have taken into account the joint mechanisms of generation and recombination of…

介观与纳米尺度物理 · 物理学 2017-02-17 Zeinulla Zhanabaev , Kadyrzhan Dikhanbayev

A new class of Erbium doped glasses with compositions xNa2O - (60-x)PbCl2 - 40P2O5 (x=0, 10, 20 and 30) were fabricated and characterized for optical properties. Absorption spectra were analyzed for important Judd-Ofelt parameters from the…

材料科学 · 物理学 2009-11-13 K. Pradeesh , C. J. Oton , V. K. Agotiya , M. Raghavendra , G. Vijaya Prakash

Colour centres hosted in solid-state materials such as silicon carbide and diamond are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these colour centres within photonic integrated…

The absorption of thin hydrogenated amorphous silicon layers can be efficiently enhanced through a controlled periodic patterning. Light is trapped through coupling with photonic Bloch modes of the periodic structures, which act as an…

Erbium (Er) ions are the gain medium of choice for fiber-based amplifiers and lasers, offering a long excited-state lifetime, slow gain relaxation, low amplification nonlinearity and noise, and temperature stability compared to…

We discuss regular particle arrays as nanostructured front layers for 3rd generation photovoltaic devices. A rigorous plane-wave method is used to investigate multi-type particle layers combining different radii and configurations. The…

光学 · 物理学 2016-09-27 Christin David

Stimulated emission of sensitized Erbium atoms is reported in silicon-rich silicon nitride waveguides. Visible pump and infrared probe measurements are carried out in waveguides fabricated from erbium-doped silicon rich silicon nitride. A…

The effect of magnetron power on the room temperature 1.54 $\mu$m infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon…

材料科学 · 物理学 2019-09-25 Syed Sajjad Hussain , Valerie Brien , Hervé Rinnert , Philippe Pigeat

The ability to distribute quantum entanglement over long distances is a vital ingredient for quantum technologies. Single atoms and atom-like defects in solids are ideal quantum light sources and quantum memories to store entanglement.…

量子物理 · 物理学 2018-06-20 Alan Dibos , Mouktik Raha , Chris Phenicie , Jeff Thompson

The light absorption of [001] grown single-crystalline silicon wafers can be enhanced by chemical etching with potassium hydroxide resulting in a pyramid-like surface texture. Alongside this advantageous property in the context of solar…

Since thin-film silicon solar cells have limited optical absorption, we explore the effect of a nanostructured back reflector to recycle the unabsorbed light. As a back reflector we investigate a 3D photonic band gap crystal made from…

This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…

The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing…

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