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We investigate the diffusive electron-transport properties of charge-doped graphene ribbons and nanoribbons with imperfect edges. We consider different regimes of edge scattering, ranging from wide graphene ribbons with (partially)…

We discuss the effect of certain types of static disorder, like that induced by curvature or topological defects, on the quantum correction to the conductivity in graphene. We find that when the intervalley scattering time is long or…

介观与纳米尺度物理 · 物理学 2009-11-11 A. F. Morpurgo , F. Guinea

Mesoscopic conductance fluctuations in graphene samples at energies not very close to the Dirac point are studied analytically. We demonstrate that the conductance variance $<[\delta G]^2>$ is very sensitive to the elastic scattering…

介观与纳米尺度物理 · 物理学 2009-03-25 Maxim Yu. Kharitonov , Konstantin B. Efetov

Non-diffusive effects in charge transport become relevant as device sizes and features become comparable to the electronic mean free path. As a model system, we investigate the electric transport around mesoscopic defects in graphene with…

介观与纳米尺度物理 · 物理学 2025-10-03 Toni Markovic , Wei Huang , William S. Huxter , Pietro Gambardella , Sebastian Stepanow

An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for…

Using local scanning electrical techniques we study edge effects in side-gated Hall nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow…

Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…

介观与纳米尺度物理 · 物理学 2015-03-13 Tony Low , F. Guinea

Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier…

材料科学 · 物理学 2009-06-12 Jian-Hao Chen , W. G. Cullen , C. Jang , M. S. Fuhrer , E. D. Williams

We study how low-energy charge carriers scatter off periodic and linear graphene grain boundaries oriented along the zigzag direction with a periodicity three times greater than that of pristine graphene. These defects map the two Dirac…

介观与纳米尺度物理 · 物理学 2016-10-25 J. N. B. Rodrigues

We show evidence of the backscattering of quantum Hall edge channels in a narrow graphene Hall bar, induced by the gating effect of the conducting tip of a Scanning Gate Microscope, which we can position with nanometer precision. We show…

介观与纳米尺度物理 · 物理学 2017-11-17 Lennart Bours , Stefano Guiducci , Alina Mreńca-Kolasińska , Bartłomiej Szafran , Jan C Maan , Stefan Heun

We present a kinetic equation approach to investigate dc transport properties of graphene in the diffusive regime considering long-range electron-impurity scattering. In our study, the effects of interband correlation (or polarization) on…

材料科学 · 物理学 2009-11-13 S. Y. Liu , X. L. Lei , Norman J. M. Horing

We analyze the scattering sector of the Hamiltonians for both gapless and gapped graphene in the presence of a charge impurity using the 2D Dirac equation, which is applicable in the long wavelength limit. We show that for certain range of…

介观与纳米尺度物理 · 物理学 2011-04-07 Kumar S. Gupta , Andjelo Samsarov , Siddhartha Sen

We study numerically the effects of edge and bulk disorder on the conductance of graphene nanoribbons. We compute the conductance suppression due to localization induced by edge scattering. We find that even for weak edge roughness,…

介观与纳米尺度物理 · 物理学 2009-11-13 Eduardo R. Mucciolo , Antonio H. Castro Neto , Caio H. Lewenkopf

We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying…

介观与纳米尺度物理 · 物理学 2023-07-19 Nam-Hee Kim , Yun-Sok Shin , Serin Park , Hong-Seok Kim , Jun Sung Lee , Chi Won Ahn , Jeong-O Lee , Yong-Joo Doh

A unique feature of the complex band structures of moir\'e materials is the presence of minivalleys, their hybridization, and scattering between them. Here we investigate magneto-transport oscillations caused by scattering between…

A potential step in a graphene nanoribbon with zigzag edges is shown to be an intrinsic source of intervalley scattering -- no matter how smooth the step is on the scale of the lattice constant a. The valleys are coupled by a pair of…

介观与纳米尺度物理 · 物理学 2015-10-12 A. R. Akhmerov , J. H. Bardarson , A. Rycerz , C. W. J. Beenakker

Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system…

We derive the local density of states from itinerant and boundary states around transport barriers and edges in graphene and show that the itinerant states lead to mesoscale undulations that could be used to probe their scattering…

介观与纳米尺度物理 · 物理学 2015-04-17 Daniel Gunlycke , Carter T. White

We study edge-states in graphene systems where a bulk energy gap is opened by inversion symmetry breaking. We find that the edge-bands dispersion can be controlled by potentials applied on the boundary with unit cell length scale. Under…

介观与纳米尺度物理 · 物理学 2009-03-11 Wang Yao , Shengyuan A. Yang , Qian Niu

The influence of electron-electron scattering on the distribution function and transport characteristics of intrinsic monolayer graphene is investigated via an ensemble Monte Carlo simulation. Due to the linear dispersion relation in the…

介观与纳米尺度物理 · 物理学 2010-05-18 X. Li , E. A. Barry , J. M. Zavada , M. Buongiorno Nardelli , K. W. Kim
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