相关论文: High-frequency gate manipulation of a bilayer grap…
A challenge for constructing large circuits of superconducting qubits is to balance addressability, coherence and coupling strength. High coherence can be attained by building circuits from fixed-frequency qubits, however, leading…
Light absorption in graphene causes a large change in electron temperature, due to low electronic heat capacity and weak electron phonon coupling [1-3], making it very attractive as a hot-electron bolometer material. Unfortunately, the weak…
We propose two potentially practical schemes to carry out two-qubit quantum gates on endohedral fullerenes $N@C_{60}$ or $P@C_{60}$. The qubits are stored in electronic spin degrees of freedom of the doped atom $N$ or $P$. By means of the…
Bosonic symmetry protected topological (BSPT) states, the bosonic analogue of topological insulators, have attracted enormous theoretical interest in the last few years. Although BSPT states have been classified by various approaches, there…
We have investigated the Coulomb screening properties and plasmon spectrum in a bilayer graphene under a perpendicular electric bias. The bias voltage applied between the two graphene layers opens a gap in the single particle energy…
A recent Letter by Zhu et al [Phys. Rev. Lett. 127, 247702 (2021)] claimed a unified mechanism for quantum oscillations (QOs) in graphite-gated 2D devices based on studies of three cases (WTe2, MoTe$_2$/WSe$_2$ heterobilayers and bilayer…
We review the fabrication and key transport properties of graphene double layers, consisting of two graphene monolayers placed in close proximity, independently contacted, and separated by an ultra-thin dielectric. We outline a simple band…
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…
We report measurements of the cross-correlation between current noise fluctuations in two capacitively coupled quantum dots in the Coulomb blockade regime. The sign of the cross-spectral density is found to be tunable by gate voltage and…
The origin of superconductivity in magic-angle twisted bilayer graphene has been a subject of intense debate. While some experimental evidence indicated an unconventional pairing mechanism, efforts to tune the critical temperature by…
For neutral atom qubits, the residual thermal motion of the cold atoms constitutes a major challenge that limits the accessible two-qubit gate fidelity. Recently, an interesting type of two-qubit controlled-PHASE quantum gate protocol has…
Exchange-coupled singlet-triplet spin qubits in two gate-defined double quantum dots are considered theoretically. Using charge density operators to describe the double-dot orbital states, we calculate the Coulomb couplings between the…
Flat-band systems are a promising platform for realizing exotic collective ground states with spontaneously broken symmetry because the electron-electron interactions dominate over the kinetic energy. A collective ground state of particular…
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a…
The superconducting fluxonium qubit has a great potential for high-fidelity quantum gates with its long coherence times and strong anharmonicity at the half flux quantum sweet spot. However, current implementations of two-qubit gates…
Coulomb drag between parallel quantum wells provides a uniquely sensitive measurement of electron correlations since the drag response depends on interactions only. Recently it has been demonstrated that a new regime of strong interactions…
Semiconductor spin qubits have emerged as a promising platform for quantum computing, following a significant improvement in their control fidelities over recent years. Increasing the qubit count remains challenging, beginning with the…
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by…
We discuss graphene nanoribbon-based charge sensors and focus on their functionality in the presence of external magnetic fields and high frequency pulses applied to a nearby gate electrode. The charge detectors work well with in-plane…
This study employs advanced phase-field modeling to investigate Si-based qubit MOSFETs, integrating electrostatics and quantum mechanical effects. We adopt a comprehensive modeling approach, utilizing full-wave treatment of the Schrodinger…