相关论文: Performance of a TiN-coated monolithic silicon pin…

To use highly resistive material for Kinetic Inductance Detectors (KID), new designs have to be done, in part due to the impedance match needed between the KID chip and the whole 50 ohms readout circuit. Chips from two new hybrid designs,…

Radiation hard n-Fz Double Sided Silicon microstrip Detectors are used at the Silicon Tracker for the detection of two-dimensional position and energy measurement of the incident protons in the R3B experiment at FAIR, Darmstadt, Germany.…

We report on the charge carrier dynamics of superconducting titanium nitride (TiN) in the frequency range 90 - 510 GHz (3 - 17 cm-1). The experiments were perfomed on a 18 nm thick TiN film with a critical temperature of 3.4 K. Measurements…

Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is…

Kaonic atoms, formed when a negatively charged kaon replaces an electron, provide a sensitive probe of the low-energy strong interaction via precision X-ray spectroscopy. The SIDDHARTA-2 experiment at the DA$\Phi$NE collider employs…

KATANA - the Krakow Array for Triggering with Amplitude discrimiNAtion - has been built and used as a trigger and veto detector for the S$\pi$RIT TPC at RIKEN. Its construction allows operating in magnetic field and providing fast response…

The experiment on the direct detection of antineutrino-electron scattering with an artificial tritium source allows to lower the present-day laboratory limit for the neutrino magnetic moment by two orders of magnitude. The experiment brings…

Structural, electronic, ferroelectric, and optical properties of two-dimensional (2D) BiN monolayer material with phosphorene-like structure are studied in terms of the density functional theory and modern Berry phase ferroelectric method.…

We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance…

This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strain in silicon. Structural relaxation of a strained primitive…

The KATRIN experiment aims to measure the effective electron antineutrino mass $m_{\overline{\nu}_e}$ with a sensitivity of 0.2 eV/c$^2$ using a gaseous tritium source combined with the MAC-E filter technique. A low background rate is…

Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive…

The NA61/SHINE experiment at the CERN SPS is a multipurpose fixed-target spectrometer for charged and neutral hadron measurements. Its research program includes studies of strong interactions as well as reference measurements for neutrino…

Using a combination of experimental techniques and density functional theory (DFT) calculations, the influence of lithium insertion on the electronic and electrochemical properties of fluourine-doped SnO$_2$ (FTO) is assessed. For this…

The planned rhenium beta-decay experiment MARE might probe the absolute mass scale of neutrinos with the same sensitivity as the tritium beta-decay experiment KATRIN, which will start data taking in 2011 and will proceed for five years. We…

Donor spin states in silicon are a promising candidate for quantum information processing. One possible donor spin readout mechanism is the bound exciton transition that can be excited optically and creates an electrical signal when it…

We study the effect of exotic charged current interactions on the electron energy spectrum in tritium decay, focussing on the KATRIN experiment and a possible modified setup that has access to the full spectrum. Both sub-eV and keV neutrino…

Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in…

We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the…

Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing.…