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Motivated by the discovery of superconductivity in boron-doped (B-doped) diamond, we investigate the localization and superconductivity in heavily doped semiconductors. The competition between Anderson localization and s-wave…

超导电性 · 物理学 2009-11-13 Youichi Yanase , Naoyuki Yorozu

The doping induced insulator-metal transition in $La_{1-x}Sr_{x}TiO_{3}$ is studied using the ab-initio LDA+DMFT method. Combining the LDA bandstructure for the actual, distorted structure found recently with multi-orbital DMFT to treat…

强关联电子 · 物理学 2016-08-31 L. Craco , M. S. Laad , S. Leoni , E. Müller-Hartmann

The origin of strange metallic phase is shown to exist due to these two conditions---(i) the electrons are strongly interacting such that there are no band and Mott-Hubbard gaps, and (ii) the electronic energy levels are crossed in such a…

强关联电子 · 物理学 2014-01-21 Andrew Das Arulsamy

The superfluid-insulator transitions of the fermionic atoms in optical lattices are investigated by the two-site dynamical mean-field theory. It is shown that the Mott transition occurs as a result of the multiband effects. The…

其他凝聚态物理 · 物理学 2009-11-13 Takuji Higashiyama , Kensuke Inaba , Sei-ichiro Suga

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2009-11-07 Y. Ohashi , Y. Ono

High-$T_{\rm C}$ superconductors show anomalous transport properties in their normal states, such as the bad-metal and pseudogap behaviors. To discuss their origins, it is important to speculate whether these behaviors are…

A possibility of explaining the light absorption observed to occur under pressure-induced xenon metallization as due to the transition to the superconducting state is analyzed. The mechanism of the van der Waals bonding is discussed.

超导电性 · 物理学 2009-11-07 V. N. Bogomolov

When a Mott metal-insulator transition is inhibited by a small amount of disorder in the layered dichalcogenide 1T-TaS$_2$, an inhomogeneous superconducting state arises below T=2.1 K, and coexists with a nearly-commensurate…

强关联电子 · 物理学 2010-05-18 P. Xu , J. O. Piatek , P. -H. Lin , B. Sipos , H. Berger , L. Forró , H. M. Rønnow , M. Grioni

We report an observation of metal-insulator transition in a thin film of SnSe$_2$. The room-temperature carrier concentration of SnSe$_2$ film was increased by electrostatic doping to 1.14$\times$ 10$^{13}$ cm$^{-2}$. A crossover from…

材料科学 · 物理学 2025-07-22 Aarti Lakhara , Lars Thole , Rolf J. Haug , P. A. Bhobe

Using the determinant quantum Monte Carlo method, we investigate the metal-insulator transition in the interacting disordered Hubbard model of a Lieb lattice, in which the system characterizes the flat band centered at the Fermi level. By…

强关联电子 · 物理学 2022-12-06 Yueqi Li , Lingyu Tian , Tianxing Ma , Hai-Qing Lin

Attractive negative-$U$ interactions between electrons facilitated by strong electron-phonon interaction are common in highly polarizable and disordered materials such as amorphous chalcogenides, but there is no direct evidence for them in…

介观与纳米尺度物理 · 物理学 2017-03-07 Yang Lu , I-Wei Chen

NiS$_2$ has been widely regarded as a model system to study the bandwidth-controlled Mott transition, as enabled by isovalent Se chemical substitution on the S sites. Motivated by advances in electrolyte gating, we theoretically investigate…

强关联电子 · 物理学 2023-03-15 Ezra Day-Roberts , Rafael M. Fernandes , Turan Birol

It is demonstrated that the point of view that metallization of xenon as a result of a band - gap closure has some discrepancies with experimental result. A superconductivity transition as an alternative possibility is examined. At such…

超导电性 · 物理学 2007-05-23 V. N. Bogomolov

Electronic conduction in GaM$_{4}$Se$_{8}$ (M=Nb;Ta) compounds with the fcc GaMo$_{4}$S$_{8}$-type structure originates from hopping of localized unpaired electrons (S=1/2) among widely separated tetrahedral M$_{4}$ metal clusters. We show…

超导电性 · 物理学 2009-11-11 M. M. Abd-Elmeguid , B. Ni , D. I. Khomskii , R. Pocha , D. Johrendt , X. Wang , K. Syassen

The transport of heat and charge in cuprates was measured in single crystals of La_{2-x}Sr_xCuO_{4+\delta} (LSCO) across the doping phase diagram at low temperatures. In underdoped LSCO, the thermal conductivity is found to decrease with…

In most superconductors, optical excitations require impurity scattering or the presence of multiple bands. This is because in clean single-band superconductors, the combination of particle-hole and inversion symmetries prevents…

超导电性 · 物理学 2023-01-04 Michał Papaj , Joel E. Moore

To explain the main features of the metal-insulator transition (MIT) in 2D we suggest a simple model taking into account strongly localized states in the band tail of 2D conductivity band with a specific emphasize of a role of…

无序系统与神经网络 · 物理学 2009-11-07 V. I. Kozub , and N. V. Agrinskaya

Superconductivity in an uncompensated boron doped diamond, a very recent observation, is strikingly close to an earlier observation of Anderson-Mott insulator to metal transition, prompting us to suggest an electron correlation driven…

强关联电子 · 物理学 2007-05-23 G. Baskaran

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…

强关联电子 · 物理学 2009-11-07 Y. Ono , R. Bulla , A. C. Hewson , M. Potthoff

Candidates for new thermoelectric and superconducting materials, which have narrow band gap and flat bands near band edges, were searched by the high-throughput first-principles calculation from an inorganic materials database. The…