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We investigate the ground-state phase diagram of the one-dimensional "ionic" Hubbard model with an alternating periodic potential at half-filling by numerical diagonalization of finite systems with the Lanczos and density matrix…

强关联电子 · 物理学 2009-11-10 A. P. Kampf , M. Sekania , G. I. Japaridze , Ph. Brune

A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…

强关联电子 · 物理学 2009-11-13 L. Craco , P. Lombardo , R. Hayn , G. I. Japaridze , E. Müller-Hartmann

We employ the dynamical mean field approximation to study the effects of ionic potential ($\Delta$) on the square lattice Hubbard model. At half-filling when the staggered potential ($\Delta$) dominates the on-site Hubbard interaction…

强关联电子 · 物理学 2019-03-27 A. Shahbazy , M. Ebrahimkhas

We investigate the neutral-to-ionic insulator-insulator transition in one-dimensional materials by treating a strong-coupling effective model based on the ionic Hubbard model using the density-matrix renormalization group and finite-size…

强关联电子 · 物理学 2015-05-13 L. Tincani , R. M. Noack , D. Baeriswyl

Paramagnetic solutions of the ionic Hubbard model at half-filling in dimensions $D>2$ indicate that the band and the Mott insulator phases are separated by a metallic phase. We present zero-temperature dynamical mean-field theory solutions,…

强关联电子 · 物理学 2009-11-13 Krzysztof Byczuk , Michael Sekania , Walter Hofstetter , Arno P. Kampf

The ionic Hubbard model on a cubic lattice is investigated using analytical approximations and Wilson's renormalization group for the charge excitation spectrum. Near the Mott insulating regime, where the Hubbard repulsion starts to…

强关联电子 · 物理学 2009-11-11 Torben Jabben , Norbert Grewe , Frithjof Anders

The interaction between itinerant and Mott localized electronic states in strongly correlated materials is studied within dynamical mean field theory in combination with the numerical renormalization group method. A novel nonmagnetic zero…

强关联电子 · 物理学 2011-11-10 T. A. Costi , A. Liebsch

We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential $\Delta$, the so-called ionic Hubbard model, using cluster dynamical mean field theory. We…

强关联电子 · 物理学 2015-06-25 S. S. Kancharla , E. Dagotto

In order to clarify the physics of the crossover from a Peierls band insulator to a correlated Mott-Hubbard insulator, we analyze ground-state and spectral properties of the one-dimensional half-filled Holstein-Hubbard model using…

强关联电子 · 物理学 2009-11-07 H. Fehske , A. P. Kampf , M. Sekania , G. Wellein

We study quantum phase transitions by measuring the bond energy, the number density, and the half-chain entanglement entropy in the one-dimensional ionic Hubbard model. By performing the infinite density matrix renormalization group with…

强关联电子 · 物理学 2021-02-24 Myung-Hoon Chung

The Mott transition in a two-band Hubbard model involving subbands of different widths is studied as a function of temperature using dynamical mean field theory combined with exact diagonalization. The phase diagram is shown to exhibit two…

强关联电子 · 物理学 2009-11-11 A. Liebsch

A repulsive Hubbard model with both spin-asymmetric hopping (${t_\uparrow\neq t_\downarrow}$) and a staggered potential (of strength $\Delta$) is studied in one dimension. The model is a compound of the mass-imbalanced (${t_\uparrow\neq…

强关联电子 · 物理学 2017-07-14 Michael Sekania , Dionys Baeriswyl , Luka Jibuti , George I. Japaridze

We investigate the ground state phase diagram of the one-dimensional ionic Hubbard model with an alternating potential at half-filling by the bosonization technique as well as by numerical diagonalization of finite systems with the Lanczos…

强关联电子 · 物理学 2007-05-23 P. Brune , G. I. Japaridze , A. P. Kampf , M. Sekania

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory recently developed by Bulla and Potthoff. The phase boundary of the metal-insulator…

强关联电子 · 物理学 2009-10-31 Y. Ono , R. Bulla , A. C. Hewson

The ionic Hubbard model is a paradigmatic setup for studying the competition between band and Mott insulating behavior. Within the variationally exact in infinite dimensions Gutzwiller approximation, we derive a compact analytic expression…

强关联电子 · 物理学 2025-12-13 Marcin M. Wysokiński

We study the zero-temperature phase diagram of the half-filled one-dimensional ionic Hubbard model. This model is governed by the interplay of the on-site Coulomb repulsion and an alternating one-particle potential. Various many-body energy…

强关联电子 · 物理学 2009-11-10 S. R. Manmana , V. Meden , R. M. Noack , K. Schoenhammer

Quantum Monte Carlo methods are used to study a quantum phase transition in a 1D Hubbard model with a staggered ionic potential (D). Using recently formulated methods, the electronic polarization and localization are determined directly…

强关联电子 · 物理学 2009-10-31 Tim Wilkens , Richard M. Martin

The ground state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean field theory. For weak to intermediate values of Coulomb repulsion $U$, the system undergoes a transition…

强关联电子 · 物理学 2009-11-13 S. S. Kancharla , S. Okamoto

We study the Hubbard-Holstein model, which includes both the electron-electron and electron-phonon interactions characterized by $U$ and $g$, respectively, employing the dynamical mean-field theory combined with Wilson's numerical…

强关联电子 · 物理学 2009-11-10 Gun Sang Jeon , Tae-Ho Park , Jung Hoon Han , Hyun C. Lee , Han-Yong Choi

The one-dimensional half-filled Hubbard model is considered at zero temperature within the cellular dynamical mean-field theory (CDMFT). By the computation of the spectral gap and the energy density with various cluster and bath sizes we…

强关联电子 · 物理学 2009-11-11 Ara Go , Gun Sang Jeon
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