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相关论文: Importance of subleading corrections for the Mott …

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We study three regimes of the Mott transitions characterized by classical, marginally quantum and quantum. In the classical regime, the quantum degeneracy temperature is lower than the critical temperature of the Mott transition, Tc, below…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada

Pressure dependence of the conductivity and thermoelectric power is measured through the Mott transition in the layer organic conductor EtMe3P[Pd(dmit)2]2. The critical behavior of the thermoelectric effect provides a clear and objective…

强关联电子 · 物理学 2015-03-17 M. Abdel-Jawad , R. Kato , I. Watanabe , N. Tajima , Y. Ishii

We explain in a consistent manner the set of seemingly conflicting experiments on the finite temperature Mott critical point, and demonstrate that the Mott transition is in the Ising universality class. We show that, even though the…

Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet,…

Metallic states near the Mott insulator show a variety of quantum phases including various magnetic, charge ordered states and high-temperature superconductivity in various transition metal oxides and organic solids. The emergence of a…

强关联电子 · 物理学 2023-12-05 Kensaku Takai , Youhei Yamaji , Fakher F. Assaad , Masatoshi Imada

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…

强关联电子 · 物理学 2023-11-29 Yuekun Niu , Yu Ni , Jianli Wang , Leiming Chen , Ye Xing , Yun Song , Shiping Feng

Phenomenological theory of the Mott transition is presented. When the critical temperature of the Mott transition is much higher than the quantum degeneracy temperature, the transition is essentially described by the Ising universality…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada

The Mott transition is a paradigmatic phenomenon where Coulomb interactions between electrons drive a metal-insulator phase transition. It is extensively studied within the Hubbard model, where a quantum critical transition occurs at a…

强关联电子 · 物理学 2025-10-20 Ankur Majumder , Sudeshna Sen

With Monte Carlo methods, we investigate the universality class of the depinning transition in the two-dimensional Ising model with quenched random fields. Based on the short-time dynamic approach, we accurately determine the depinning…

计算物理 · 物理学 2012-03-01 X. P. Qin , B. Zheng , N. J. Zhou

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2007-05-23 Yasuo Ohashi , Yoshiaki Ōno

We present evidence for Mott quantum criticality in an anisotropic two-dimensional system of coupled Hubbard chains at half-filling. In this scenario emerging from variational cluster approximation and cluster dynamical mean-field theory,…

强关联电子 · 物理学 2016-03-08 Benjamin Lenz , Salvatore R. Manmana , Thomas Pruschke , Fakher F. Assaad , Marcin Raczkowski

Theory of classical critical phenomena of Mott transition is developed for the dimensionality $d \le \infty$. Reconsidering a cluster dynamical mean-field theory (DMFT), Ginzburg-Landau free energy is derived in terms of hybridization…

强关联电子 · 物理学 2007-05-23 Shigeki Onoda

We study numerically the voltage-induced breakdown of a Mott insulating phase in a system of charged classical particles with long-range interactions. At half-filling on a square lattice this system exhibits Mott localization in the form of…

强关联电子 · 物理学 2021-01-29 Louk Rademaker , Valerii V. Vinokur , Alexey Galda

Changing the interactions between particles in an ensemble-by varying the temperature or pressure, for example-can lead to phase transitions whose critical behaviour depends on the collective nature of the many-body system. Despite the…

强关联电子 · 物理学 2009-11-11 F. Kagawa , K. Miyagawa , K. Kanoda

We use the two-step density-matrix renormalization group method to elucidate the long-standing issue of the universality class of the Mott transition in the Hubbard model in two dimensions. We studied a spatially anisotropic two-dimensional…

强关联电子 · 物理学 2015-06-05 S. Moukouri , Eitan Eidelstein

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2009-11-07 Y. Ohashi , Y. Ono

Recent studies of electrical transport, both theoretical and experimental, near the bandwidth-tuned Mott metal-insulator transition have uncovered apparent quantum critical scaling of the electrical resistivity at elevated temperatures,…

强关联电子 · 物理学 2019-11-06 Heike Eisenlohr , Seung-Sup B. Lee , Matthias Vojta

Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…

强关联电子 · 物理学 2010-06-23 G. Sordi , K. Haule , A. -M. S. Tremblay

In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…

强关联电子 · 物理学 2011-12-30 V. Dobrosavljevic

Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram…

强关联电子 · 物理学 2007-05-23 M. Potthoff
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