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Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion.…

介观与纳米尺度物理 · 物理学 2015-07-03 Søren Schou Gregersen , Jesper Goor Pedersen , Stephen R. Power , Antti-Pekka Jauho

Surface superconductivity in rhombohedral graphite is a robust phenomenon which can exist even when higher order hoppings between the layers lift the topological protection of the surface flat band and introduce a quadratic dispersion of…

超导电性 · 物理学 2013-05-13 N. B. Kopnin , M. Ijäs , A. Harju , T. T. Heikkilä

The non-resonant electromagnetic transmission of a normal-incident plane wave through a single hole in a perfect conductor metal slab of finite width is studied. The cases of rectangular and circular holes are treated in detail. For holes…

材料科学 · 物理学 2009-11-13 A. Yu. Nikitin , D. Zueco , F. J. Garcia-Vidal , L. Martin-Moreno

The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the…

Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and…

A strong low-temperature enhancement of the tunneling conductance between graphene bilayers has been reported recently, and interpreted as a signature of equilibrium electron-hole pairing, first predicted in bilayers more than forty years…

介观与纳米尺度物理 · 物理学 2020-01-22 Dmitry K. Efimkin , G. William Burg , Emanuel Tutuc , Allan H. MacDonald

We introduce and analyze a model that sheds light on the interplay between correlated insulating states, superconductivity, and flavor-symmetry breaking in magic angle twisted bilayer graphene. Using a variational mean-field theory, we…

强关联电子 · 物理学 2021-12-14 Gal Shavit , Erez Berg , Ady Stern , Yuval Oreg

The fast electron transport and superior multidirectional flexibility of three-dimensional graphene-based foams (GFs) are pivotal in the realm of stretchable electronics. We observed pre-stretching induced modulation of the…

材料科学 · 物理学 2024-11-27 Shu-Ting Guo , Fangxin Zou

We measure hole transport in poly(3-hexylthiophene) field effect transistors with channel lengths from 3 $\mu$m down to 200 nm, from room temperature down to 10 K. Near room temperature effective mobilities inferred from linear regime…

介观与纳米尺度物理 · 物理学 2007-05-23 B. H. Hamadani , D. Natelson

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing…

介观与纳米尺度物理 · 物理学 2009-11-10 Hwayong Noh , M. P. Lilly , D. C. Tsui , J. A. Simmons , L. N. Pfeiffer , K. W West

We predict enhanced electron-hole superfluidity in two coupled electron-hole armchair-edge terminated graphene nanoribbons separated by a thin insulating barrier. In contrast to graphene monolayers, the multiple subbands of the nanoribbons…

超导电性 · 物理学 2016-05-10 M. Zarenia , A. Perali , F. M. Peeters , D. Neilson

We report on infrared spectroscopy of bilayer graphene integrated in gated structures. We observed a significant asymmetry in the optical conductivity upon electrostatic doping of electrons and holes. We show that this finding arises from a…

介观与纳米尺度物理 · 物理学 2009-11-13 Z. Q. Li , E. A. Henriksen , Z. Jiang , Z. Hao , M. C. Martin , P. Kim , H. L. Stormer , D. N. Basov

Self-consistent theory of electron localization in disordered systems is generalized for the case of interacting electrons. We propose and critically compare a number of possible self-consistency schemes which take into account the lowest…

凝聚态物理 · 物理学 2008-02-03 E. Z. Kuchinskii , M. V. Sadovskii , V. G. Suvorov

We theoretically investigate the temperature-dependent static susceptibility and long-range magnetic coupling of three-dimensional (3D) chiral gapless electron-hole systems (semimetals) with arbitrary band dispersion [i.e., $\varepsilon(k)…

介观与纳米尺度物理 · 物理学 2018-08-30 Sanghyun Park , Hongki Min , E. H. Hwang , S. Das Sarma

Isolated, atomically thin conducting membranes of graphite, called graphene, have recently been the subject of intense research with the hope that practical applications in fields ranging from electronics to energy science will emerge.…

介观与纳米尺度物理 · 物理学 2010-09-17 S. Garaj , W. Hubbard , A. Reina , J. Kong , D. Branton , J. A. Golovchenko

We studied formation of charge density wave between valleys in a system with a double-well-like dispersive valence band relevant for the rhombohedral graphene trilayer. In a regime with 2 Fermi surfaces, electron- and hole-like: one of…

强关联电子 · 物理学 2025-09-16 Igor V. Blinov

The recent discovery of superconductivity and magnetism in trilayer rhombohedral graphene (RG) establishes an ideal, untwisted platform to study strong correlation electronic phenomena. However, the correlated effects in multilayer RG have…

We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temperature, and applied perpendicular electrical displacement D.…

介观与纳米尺度物理 · 物理学 2013-09-17 A. F. Young , C. R. Dean , I. Meric , S. Sorgenfrei , H. Ren , K. Watanabe , T. Taniguchi , J. Hone , K. L. Shepard , P. Kim

We report on temperature dependent photocurrent measurements of high-quality dual-gated monolayer graphene (MLG) p-n junction devices. A photothermoelectric (PTE) effect governs the photocurrent response in our devices, allowing us to track…

We employ a dual-gated geometry to control the band gap \Delta in bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two…

介观与纳米尺度物理 · 物理学 2015-05-19 K. Zou , J. Zhu