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Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while…

材料科学 · 物理学 2009-11-13 G. Giovannetti , P. A. Khomyakov , G. Brocks , V. M. Karpan , J. van den Brink , P. J. Kelly

Measuring the transport of electrons through a graphene sheet necessarily involves contacting it with metal electrodes. We study the adsorption of graphene on metal substrates using first-principles calculations at the level of density…

材料科学 · 物理学 2015-05-13 P. A. Khomyakov , G. Giovannetti , P. C. Rusu , G. Brocks , J. van den Brink , P. J. Kelly

We have performed a density functional study of graphene adsorbed on Au(111) surface using both a local density approximation and a semiempirical van der Waals approach proposed by Grimme, known as the DFT-D2 method. Graphene physisorbed on…

材料科学 · 物理学 2015-05-27 J. Slawinska , P. Dabrowski , I. Zasada

Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive…

材料科学 · 物理学 2009-01-05 Z. Klusek , P. Dabrowski , P. Kowalczyk , W. Kozlowski , P. Blake , M. Szybowicz , T. Runka , W. Olejniczak

The inherent asymmetry of the electric transport in graphene is attributed to Klein tunneling across barriers defined by $\textit{pn}$-interfaces between positively and negatively charged regions. By combining conductance and shot noise…

介观与纳米尺度物理 · 物理学 2019-10-04 Antti Laitinen , G. S. Paraoanu , Mika Oksanen , Monica F. Craciun , Saverio Russo , Edouard Sonin , Pertti Hakonen

We have studied the graphene/gold interface by means of density functional theory (DFT) and scanning tunneling spectroscopy (STS). Weak interaction between graphene and the underlying gold surface leaves unperturbed Dirac cones in the…

材料科学 · 物理学 2015-06-03 J. Slawinska , I. Wlasny , P. Dabrowski , Z. Klusek , I. Zasada

We perform a phenomenological analysis of the problem of the electronic doping of a graphene sheet by deposited transition metal atoms, which aggregate in clusters. The sample is placed in a capacitor device such that the electronic doping…

To minimize parasitic doping effects caused by uncontrolled material adsorption, graphene is often investigated under vacuum. Here we report an entirely unexpected phenomenon occurring in vacuum systems, namely strong n-doping of graphene…

介观与纳米尺度物理 · 物理学 2013-11-11 Christophe Caillier , Dong-Keun Ki , Yuliya Lisunova , Iaroslav Gaponenko , Patrycja Paruch , Alberto F. Morpurgo

The effect of grain boundaries and wrinkles on the electrical properties of polycrystalline graphene is pronounced. Here we investigate the stitching between grains of polycrystalline graphene, specifically, overlapping of layers at the…

材料科学 · 物理学 2014-06-09 Rahul Rao , Neal Pierce , Avetik R. Harutyunyan

Recent low-temperature electron transport experiments in high-quality graphene rely on a technique of doped graphene leads, where the coupling between the graphene flake and its metallic contacts is increased by locally tuning graphene to…

We study the effects of metallic doping on the electronic properties of graphene using density functional theory in the local density approximation in the presence of a local charging energy (LDA+U). The electronic properties are sensitive…

材料科学 · 物理学 2009-11-13 B. Uchoa , C. -Y. Lin , A. H. Castro Neto

To understand the band bending caused by metal contacts, we study the potential and charge density induced in graphene in response to contact with a metal strip. We find that the screening is weak by comparison with a normal metal as a…

材料科学 · 物理学 2015-05-14 P. A. Khomyakov , A. A. Starikov , G. Brocks , P. J. Kelly

The density of states (DOS) of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure fabricated by a resist-free metal deposition process. Graphene underneath…

材料科学 · 物理学 2013-07-22 Ryota Ifuku , Kosuke Nagashio , Tomonori Nishimura , Akira Toriumi

In this work, we present an investigation regarding how and why molecular hydrogen changes the electronic properties of graphene field effect transistors. We demonstrate that interaction with H2 leads to local doping of graphene near of the…

We achieve fine tuning of graphene effective doping by applying ultrahigh pressures (> 10 GPa) using Atomic Force Microscopy (AFM) diamond tips. Specific areas in graphene flakes are irreversibly flattened against a SiO2 substrate. Our work…

There is an increasing amount of literature concerning electronic properties of graphene close to the neutrality point. Many experiments continue using the two-probe geometry or invasive contacts or do not control samples' macroscopic…

介观与纳米尺度物理 · 物理学 2010-08-27 P. Blake , R. Yang , S. V. Morozov , F. Schedin , L. A. Ponomarenko , A. A. Zhukov , I. V. Grigorieva , K. S. Novoselov , A. K. Geim

We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene. We map the differential conductance of our junctions versus…

介观与纳米尺度物理 · 物理学 2011-03-22 C. E. Malec , D. Davidovic

We explore the effects of metal contacts on the operation and scalability of 2D Graphene Field-Effect-Transistors (GFETs) using detailed numerical device simulations based on the non-equilibrium Green's function formalism self-consistently…

介观与纳米尺度物理 · 物理学 2015-05-28 Pei Zhao , Qin Zhang , Debdeep Jena , Siyuranga O. Koswatta

We report on a first-principles study of the conductance through graphene suspended between Al contacts as a function of junction length, width, and orientation. The charge transfer at the leads and into the freestanding section gives rise…

材料科学 · 物理学 2010-02-19 Salvador Barraza-Lopez , Mihajlo Vanevic , Markus Kindermann , Mei-Yin Chou

We study the variation of electron transmission through Au-S-benzene-S-Au junctions and related systems as a function of the structure of the Au:S contacts. For junctions with semi-infinite flat Au(111) electrodes, the highly coordinated…

介观与纳米尺度物理 · 物理学 2009-11-11 A. Grigoriev , J. Skoeldberg , G. Wendin , Z. Crljen
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