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The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2007-05-23 Yasuo Ohashi , Yoshiaki Ōno

Critical properties in the dynamical charge correlation function for the one-dimensional Mott insulator are studied. By properly taking into account {\it the final-state interaction} between the charge and spin degrees of freedom, we find…

凝聚态物理 · 物理学 2009-10-31 T. Fujii , N. Kawakami

Theory of classical critical phenomena of Mott transition is developed for the dimensionality $d \le \infty$. Reconsidering a cluster dynamical mean-field theory (DMFT), Ginzburg-Landau free energy is derived in terms of hybridization…

强关联电子 · 物理学 2007-05-23 Shigeki Onoda

We present evidence for Mott quantum criticality in an anisotropic two-dimensional system of coupled Hubbard chains at half-filling. In this scenario emerging from variational cluster approximation and cluster dynamical mean-field theory,…

强关联电子 · 物理学 2016-03-08 Benjamin Lenz , Salvatore R. Manmana , Thomas Pruschke , Fakher F. Assaad , Marcin Raczkowski

We investigate the role of generic scale invariance in a Mott transition from a U(1) spin-liquid insulator to a Landau Fermi-liquid metal, where there exist massless degrees of freedom in addition to quantum critical fluctuations. Here, the…

强关联电子 · 物理学 2021-05-19 Jinho Yang , Iksu Jang , Jae-Ho Han , Ki-Seok Kim

Based on the non-skeleton diagrammatic expansion satisfying the compressibility and spin-susceptibility sum rules, we investigate static charge and spin responses in a two-dimensional extended Hubbard model with the nearest-neighbor Coulomb…

强关联电子 · 物理学 2022-09-07 Kazuyoshi Yoshimi , Takeo Kato , Hideaki Maebashi

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2009-11-07 Y. Ohashi , Y. Ono

Finding microscopic models for metallic states that exhibit quantum critical properties such as $\omega/T$ scaling is a major theoretical challenge. We calculate the local dynamical spin susceptibility $\chi(T,\omega)$ for a Hubbard model…

强关联电子 · 物理学 2017-04-07 Nagamalleswararao Dasari , N. S. Vidhyadhiraja , Mark Jarrell , Ross H. McKenzie

The physics of the Mott metal-insulator transition (MIT) has attracted huge interest in the last decades. However, despite broad efforts, some key theoretical predictions are still lacking experimental confirmation. In particular, it is not…

We study electric transport near the Mott metal-insulator transition in a triangular-lattice Hubbard model at half filling. We calculate optical conductivity $\sigma(\omega)$ based on a cellular dynamical mean field theory including vertex…

强关联电子 · 物理学 2015-06-12 Toshihiro Sato , Kazumasa Hattori , Hirokazu Tsunetsugu

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…

强关联电子 · 物理学 2023-11-29 Yuekun Niu , Yu Ni , Jianli Wang , Leiming Chen , Ye Xing , Yun Song , Shiping Feng

Metallic states near the Mott insulator show a variety of quantum phases including various magnetic, charge ordered states and high-temperature superconductivity in various transition metal oxides and organic solids. The emergence of a…

强关联电子 · 物理学 2023-12-05 Kensaku Takai , Youhei Yamaji , Fakher F. Assaad , Masatoshi Imada

We reformulate the time-dependent Gutzwiller approximation by M. Schir\'o and M. Fabrizio [Phys. Rev. Lett. 105, 076401 (2010)] in the framework of slave-boson mean-field theory, which is used to investigate the dynamical Mott transition of…

强关联电子 · 物理学 2013-07-17 Malte Behrmann , Michele Fabrizio , Frank Lechermann

Recent studies of electrical transport, both theoretical and experimental, near the bandwidth-tuned Mott metal-insulator transition have uncovered apparent quantum critical scaling of the electrical resistivity at elevated temperatures,…

强关联电子 · 物理学 2019-11-06 Heike Eisenlohr , Seung-Sup B. Lee , Matthias Vojta

We study the charge dynamic structure factor of the one-dimensional Hubbard model with finite on-site repulsion U at half filling. Numerical results from the time-dependent density matrix renormalization group are analyzed by comparison…

强关联电子 · 物理学 2012-04-23 R. G. Pereira , K. Penc , S. R. White , P. D. Sacramento , J. M. P. Carmelo

We investigate the dynamical spin and charge structure factors and the one-particle spectral function of the one-dimensional extended Hubbard model at half band-filling using the dynamical density-matrix renormalization group method. The…

强关联电子 · 物理学 2009-11-11 H. Benthien , E. Jeckelmann

The $2d$ Hubbard model with nearest-neighbour hopping on the square lattice and an average of one electron per site is known to undergo an extended crossover from metallic to insulating behavior driven by proliferating antiferromagnetic…

强关联电子 · 物理学 2020-03-19 Aaram J. Kim , Fedor Simkovic , Evgeny Kozik

The interaction-induced metal-insulator transition should be in the Ising universality class. Experiments on layered organic superconductors suggest that the observed critical endpoint of the first-order Mott transition belongs instead to a…

强关联电子 · 物理学 2012-06-19 Patrick Sémon , A. -M. S. Tremblay

The Mott metal-insulator transition in the Hubbard model is studied by constructing a dynamical slave-boson mean-field theory in the limit of large lattice coordination number $z$ that incorporates the binding between doubly occupied…

强关联电子 · 物理学 2020-01-15 Sen Zhou , Long Liang , Ziqiang Wang

We investigate the Mott transition in the Kagom\'e lattice Hubbard model using a cluster extension of dynamical mean field theory. The calculation of the double occupancy, the density of states, the static and dynamical spin correlation…

强关联电子 · 物理学 2009-11-11 Takuma Ohashi , Norio Kawakami , Hirokazu Tsunetsugu
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