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相关论文: Backflow correlations in the Hubbard model: an eff…

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We argue that the binding between doubly occupied (doublon) and empty (holon) sites governs the incoherent excitations and plays a key role in the Mott transition in strongly correlated Mott-Hubbard systems. We construct a new saddle point…

强关联电子 · 物理学 2014-05-22 Sen Zhou , Yupeng Wang , Ziqiang Wang

We show that the Mott transition occurring in bosonic Hubbard models can be successfully described by a simple variational wave function that contains all important long-wavelength correlations. Within this approach, a smooth…

强关联电子 · 物理学 2007-05-23 Manuela Capello , Federico Becca , Michele Fabrizio , Sandro Sorella

To understand the mechanism of Mott transitions in case of no magnetic influence, superfluid-insulator (Mott) transitions in the S=0 Bose Hubbard model at unit filling are studied on the square and triangular lattices, using a variational…

强关联电子 · 物理学 2015-03-19 Hisatoshi Yokoyama , Tomoaki Miyagawa , Masao Ogata

We study the phase diagram of the frustrated $t{-}t^\prime$ Hubbard model on the square lattice by using a novel variational wave function. Taking the clue from the backflow correlations that have been introduced long-time ago by Feynman…

强关联电子 · 物理学 2010-09-23 Federico Becca , Luca F. Tocchio , Sandro Sorella

A mechanism of Mott transitions in a Bose Hubbard model on a square lattice is studied, using a variational Monte Carlo method. Besides an onsite correlation factor, we introduce a four-body doublon-holon factor into the trial state, which…

强关联电子 · 物理学 2009-11-13 Hisatoshi Yokoyama , Masao Ogata

We expose the relevance of double occupancy conservation symmetry in application of the Hubbard-I approach to strongly correlated electron systems. We propose the utility of a composite method, viz. the Hubbard-I method in conjunction with…

强关联电子 · 物理学 2013-01-10 Przemyslaw R. Grzybowski , Ravindra W. Chhajlany

Strong correlation effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half-filling. This typically happens whenever the inter-site Coulomb repulsion induces a tendency…

The mechanism of Mott transition in the Hubbard model on the square lattice is studied without explicit introduction of magnetic and superconducting correlations, using a variational Monte Carlo method. In the trial wave functions, we…

强关联电子 · 物理学 2015-05-27 Tomoaki Miyagawa , Hisatoshi Yokoyama

The Mott metal-insulator transition in the Hubbard model is studied by constructing a dynamical slave-boson mean-field theory in the limit of large lattice coordination number $z$ that incorporates the binding between doubly occupied…

强关联电子 · 物理学 2020-01-15 Sen Zhou , Long Liang , Ziqiang Wang

We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling…

强关联电子 · 物理学 2018-08-30 Caterina De Franco , Luca F. Tocchio , Federico Becca

We introduce an efficient way to improve the accuracy of projected wave functions, widely used to study the two-dimensional Hubbard model. Taking the clue from the backflow contribution, whose relevance has been emphasized for various…

强关联电子 · 物理学 2009-11-13 Luca F. Tocchio , Federico Becca , Alberto Parola , Sandro Sorella

We study the binding of a holon to a doublon in a half-filled Hubbard model as the mechanism of the zero-temperature metal-insulator transition. In a spin polarized system and a non-bipartite lattice a single holon-doublon (HD) pair…

强关联电子 · 物理学 2016-01-06 Peter Prelovšek , Jure Kokalj , Zala Lenarčič , Ross H. McKenzie

We study two-component fermions in optical lattices with spatially alternating on-site interactions using dynamical mean-field theory. Calculating the quasi-particle weight, double occupancy, and order parameters for each sublattice, we…

强关联电子 · 物理学 2013-01-16 Akihisa Koga , Takamitsu Saitou , Atsushi Yamamoto

We consider the one-band Hubbard model on the square lattice by using variational and Green's function Monte Carlo methods, where the variational states contain Jastrow and backflow correlations on top of an uncorrelated wave function that…

强关联电子 · 物理学 2016-11-17 Luca F. Tocchio , Federico Becca , Sandro Sorella

We have studied the impact of non-local electronic correlations at all length scales on the Mott-Hubbard metal-insulator transition in the unfrustrated two-dimensional Hubbard model. Combining dynamical vertex approximation, lattice quantum…

强关联电子 · 物理学 2015-03-05 T. Schäfer , F. Geles , D. Rost , G. Rohringer , E. Arrigoni , K. Held , N. Blümer , M. Aichhorn , A. Toschi

We investigate the Mott transition in the anisotropic kagom\'e lattice Hubbard model using the cellular dynamical mean field theory combined with continuous-time quantum Monte Carlo simulations. By calculating the double occupancy and the…

强关联电子 · 物理学 2015-05-19 Yuta Furukawa , Takuma Ohashi , Yohta Koyama , Norio Kawakami

The ground state for the half-filled $t-t'$ Hubbard model is treated within the Hartree-Fock approximation and the slave boson approach including correlations. The criterium for the metal-insulator transition in the Slater scenario is…

强关联电子 · 物理学 2021-07-14 P. A. Igoshev , V. Yu. Irkhin

An analytical solution of the Mott transition is obtained for the Hubbard model on the Bethe lattice in the large coordination number ($z$) limit. The excitonic binding of doublons (doubly occupied sites) and holons (empty sites) is shown…

强关联电子 · 物理学 2016-12-15 Sen Zhou , Long Liang , Ziqiang Wang

Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…

强关联电子 · 物理学 2024-10-10 Maria Chatzieleftheriou , Silke Biermann , Evgeny A. Stepanov

The Mott-Hubbard metal-insulator transition is investigated in a two-band Hubbard model within dynamical mean-field theory. To this end, we use a suitable extension of Wilson's numerical renormalization group for the solution of the…

强关联电子 · 物理学 2009-11-10 Thomas Pruschke , Ralf Bulla
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