相关论文: Influence of Electron-electron Drag on Piezoresist…
The transversal and longitudinal resistance in the quantum Hall effect regime was measured in a Si MOSFET sample in which a slot-gate allows one to vary the electron density and filling factor in different parts of the sample. In case of…
We study the temperature evolution of the non-linear oscillatory magnetoresistance in a high-mobility two-dimensional electron system subject to a strong dc electric field. We find that the decay of the oscillation amplitude with increasing…
Hall-effect thrusters (HETs) operated with xenon are one of the most commonly used electric propulsion technologies for a wide range of space missions, including drag compensation in low Earth orbit, station-keeping, and orbital insertion,…
In this study, we demonstrate that introducing of rare-earth elements, $R$ = La or Pr, into the Bi-O charge reservoir layer of BiCuSeO leads to an increase of both, the charge carrier concentration and the effective mass. Although the…
We derive and evaluate expressions for the frictional Coulomb drag between disordered two-dimensional electron gas layers. Our derivation is based on the memory-function formalism and the expression for the drag reduces to previously known…
In order to separate the universal and sample-specific effects in the conductivity of high-mobility Si inversion layers, we studied the electron transport in the same device after cooling it down to 4K at different fixed values of the gate…
Momentum transfer due to Coulomb interaction between two parallel, two-dimensional, narrow, and spatially separated layers, when a current I_{drive} is driven through one layer, is studied in the presence of a perpendicular magnetic field…
The possibility of a negative drag force on a defect in nonequilibrium polariton quantum fluids is presented. We relate this phenomenon to the selective parametric amplification of the waves scattered by the defect. This leads to the…
We report resistivity and Hall effect results on Ba(Fe1-xNix)2As2 and compare them with those in Ba(Fe1-xCox)2As2. The Hall number RH is negative for all x values from 0.01 to 0.14, which indicates that electron carriers dominate the…
We study the impact of different interlayers and ferroelectric materials on charge trapping during the endurance fatigue of Si FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) gate stack. We have fabricated FeFET devices with different…
The evolution of the superconducting transition temperature ($T_c$) in FeSe was investigated under in-plane, out-of-plane, and hydrostatic compression. For pressures up to 0.6 GPa, $T_c$ increases regardless of the compression mode,…
The fluid-solid-electric dynamics of a flexible plate covered by interconnected piezoelectric patches in an axial steady flow are investigated using numerical simulations based on a reduced-order model of the fluid loading for slender…
Transport properties of a charged droplet of weakly interacting particles in an external field are investigated. A non-equilibrium distribution function which describes a process of the droplet transverse evolution with constant entropy in…
In the ballistic regime, the metallic temperature dependence of the conductivity in a two-dimensional electron system in silicon is found to change non-monotonically with the degree of spin polarization. In particular, it fades away just…
A universal mechanism for strong magnetic-field effects of nonmagnetic organic semiconductors is presented. A weak magnetic field (less than hundreds mT) can substantially change the charge carrier hopping coefficient between two…
We introduce a distinctive feature of spin-polarized transport, the Spin Coulomb Drag: there is an intrinsic source of friction for spin currents due to the Coulomb interaction between spin ``up'' and spin ``down'' electrons. We calculate…
A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is…
For semiconductors and semimetals possessing a narrow gap between bands with different parity, the dispersion of the dielectric function is explicitly evaluated in the infrared region. The imaginary part of the dielectric function has a…
Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces…
Carrier dynamics in amorphous a-Si$_{1-x}$RE$_{x}$ (RE=Gd, Y) films has been studied in the doping regime close to the metal-insulator transition by means of infrared spectroscopy. Optical constants throughout the entire intra-gap region…