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Three dimensional (3D) topological insulators are quantum materials with a spin-orbit induced bulk insulating gap that exhibit quantum-Hall-like phenomena in the absence of applied magnetic fields. The proposed applications of topological…

介观与纳米尺度物理 · 物理学 2009-07-20 Y. Xia , D. Qian , D. Hsieh , R. Shankar , H. Lin , A. Bansil , A. V. Fedorov , D. Grauer , Y. S. Hor , R. J. Cava , M. Z. Hasan

Topological insulators represent a new quantum state of matter that are insulating in the bulk but metallic on the edge or surface. In the Dirac surface state, it is well-established that the electron spin is locked with the crystal…

Topological insulators are novel macroscopic quantum-mechanical phase of matter, which hold promise for realizing some of the most exotic particles in physics as well as application towards spintronics and quantum computation. In all the…

The emergence of topological order in graphene is in great demand for the realization of quantum spin Hall states. Recently, it is theoretically proposed that the spin textures of surface states in topological insulator can be directly…

介观与纳米尺度物理 · 物理学 2017-07-06 Liang Zhang , Ben-Chuan Lin , Yan-Fei Wu , Jun Xu , Dapeng Yu , Zhi-Min Liao

Topological insulators are distinguished from normal insulators by their bulk insulating gap and odd number of surface states connecting the inverted conduction and valence bands and showing Dirac cones at the time-reversal invariant points…

材料科学 · 物理学 2015-05-18 Hosub Jin , Jung-Hwan Song , Arthur J. Freeman

Electron systems that possess light-like dispersion relations or the conical Dirac spectrum, such as graphene and bismuth, have recently been shown to harbor unusual collective states in high magnetic fields. Such states are possible…

介观与纳米尺度物理 · 物理学 2009-10-08 D. Hsieh , Y. Xia , D. Qian , L. Wray , J. H. Dil , F. Meier , L. Patthey , J. Osterwalder , A. V. Fedorov , H. Lin , A. Bansil , D. Grauer , Y. S. Hor , R. J. Cava , M. Z. Hasan

We show that the strongly spin-orbit coupled materials Bi2Te3 and Sb2Te3 (first non-Bi topological insulator) and their derivatives belong to the Z2 (Time-Reversal-Protected, elastic backscattering suppressed) topological-insulator class.…

介观与纳米尺度物理 · 物理学 2009-10-08 D. Hsieh , Y. Xia , D. Qian , L. Wray , J. H. Dil , F. Meier , J. Osterwalder , L. Patthey , A. V. Fedorov , H. Lin , A. Bansil , D. Grauer , Y. S. Hor , R. J. Cava , M. Z. Hasan

Prototypical three-dimensional topological insulators of the Bi$_2$Se$_3$ family provide a beautiful example of the appearance of the surface states inside the bulk band gap caused by spin-orbit coupling-induced topology. The surface states…

介观与纳米尺度物理 · 物理学 2020-10-27 Klaus Zollner , Jaroslav Fabian

Topological insulators (TIs) and graphene present two unique classes of materials which are characterized by spin polarized (helical) and non-polarized Dirac-cone band structures, respectively. The importance of many-body interactions that…

The energy-momentum relationship of electrons on the surface of an ideal "Hydrogen-Atom" Topological Insulator forms a cone - a Dirac cone, which, when warped and distorted (no longer described by the Dirac equation), can lead to unusual…

介观与纳米尺度物理 · 物理学 2009-12-31 M. Z. Hasan , H. Lin , A. Bansil

A key feature of topological insulators is the robustness of the electron energy spectrum. At a surface of a topological insulator, Dirac point is protected by the characteristic symmetry of the system. The breaking of the symmetry opens a…

介观与纳米尺度物理 · 物理学 2016-12-21 S. Stagraczynski , L. Chotorlishvili , V. K. Dugaev , C. -L. Jia , A. Ernst , A. Komnik , J. Berakdar

Surfaces of topological insulators host a new class of states with Dirac dispersion and helical spin texture. Potential quantum computing and spintronic applications using these states require manipulation of their electronic properties at…

介观与纳米尺度物理 · 物理学 2015-05-30 Haim Beidenkopf , Pedram Roushan , Jungpil Seo , Lindsay Gorman , Ilya Drozdov , Yew San Hor , R. J. Cava , Ali Yazdani

3D topological insulators, similar to the Dirac material graphene, host linearly dispersing states with unique properties and a strong potential for applications. A key, missing element in realizing some of the more exotic states in…

介观与纳米尺度物理 · 物理学 2015-06-05 Yoshinori Okada , Wenwen Zhou , D. Walkup , Chetan Dhital , S. D. Wilson , V. Madhavan

The presence of an exchange field in topological insulators reveals novel spin related phenomena derived from the combination of topology and magnetism. In the present work we show the controlled occurrence of either metallic or gapped…

材料科学 · 物理学 2017-04-12 Hugo Aramberri , M. Carmen Muñoz

We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces…

介观与纳米尺度物理 · 物理学 2015-03-17 Oleg V. Yazyev , Joel E. Moore , Steven G. Louie

Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudo-magnetic-field effects, helical flat bands and topological phase transitions.…

Aiming at the future spintronics device applications of the spin-polarized surface states in three-dimensional topological insulator, a highly insulating bulk state and a tunable Dirac cone surface state are required. Here we employ a slab…

材料科学 · 物理学 2020-01-01 Takao Kosaka , Kunihiko Yamauchi , Tamio Oguchi

We investigated the Dirac-cone state and its modulation when an ultrathin film of topological insulator Bi2Se3 was epitaxially grown on a van-der-Waals ferromagnet Cr2Si2Te6 (CST) by angle-resolved photoemission spectroscopy. We observed a…

Both the theoretical and experimental discovery of single-Dirac-cone topological-insulator-class was reported at arXiv:0812.2078 (2008) [Y. Xia et.al., Nature Physics 5, 398-402 (2009)…

Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work,…

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