相关论文: Possibility of exchange switching ferromagnet - an…
Antiferromagnetic (AFM) semiconductor MnS$_2$ possesses both high-spin and low-spin magnetic phases that can be reversibly switched by applying pressure. With increasing pressure, the high-spin state undergoes pressure-induced metalization…
Strong ferromagnetic interlayer exchange couplings $J$ in perpendicularly magnetized systems are becoming increasingly desirable for applications. We study whether ferromagnetic interlayer exchange couplings can be measured by a combination…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…
We propose the spin swapping effect for an exchange magnon spin current in a perpendicularly magnetized ferromagnetic medium with in plane anisotropy on the surface. The excitation of a magnon current flowing along an in-plane direction…
Photoirradiation effects in correlated electrons coupled with localized spins are studied based on the extended double-exchange model. In particular, we examine melting of an antiferromagnetic (AFM) charge order insulating state by varying…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…
In this work, IrMn$_{3}$/insulating-Y$_{3}$Fe$_{5}$O$_{12}$ exchange-biased bilayers are studied. The behavior of the net magnetic moment $\Delta m_{AFM}$ in the antiferromagnet is directly probed by anomalous and planar Hall effects, and…
Altermagnets and fully-compensated ferrimagnets are two canonical classes of zero-net-moment magnets. An altermagnetic (AM) half-metal cannot exist due to its AM spin splitting, while a fully-compensated ferrimagnetic (FC-FIM) metal seems…
A comprehensive theoretical investigation on the field-driven reorientation transitions in uniaxial multilayers with antiferromagnetic coupling is presented. It is based on a complete survey of the one-dimensional solutions for the basic…
We study spin-dependent electron transport through a ferromagnetic-antiferromagnetic-normal metal tunneling junction subject to a voltage or temperature bias, in the absence of spin-orbit coupling. We derive microscopic formulas for various…
Superlattices built from two antiferromagnetic (AFM) charge/orbital order compounds, $Pr_{0.5}Ca_{0.5}MnO_3$ and $La_{0.5}Ca_{0.5}MnO_3$, have been studied as the thickness of $La_{0.5}Ca_{0.5}MnO_3$ ($LCMO$) varied. High structural quality…
We propose a mechanism for magnon-plasmon coupling and hybridization in ferromagnetic (FM) and antiferromagnetic (AFM) systems. The electric field associated with plasmon oscillations creates a non-equilibrium spin density via the inverse…
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a…
It was demonstrated recently that on ultrashort time scales magnetization dynamics does not only exhibit precession but also nutation. Here, we investigate how nutation can contribute to spin switching leading towards ultrafast data…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
The antiferromagnetic (AFM) to ferromagnetic (FM) first order phase transition of an epitaxial FeRh thin-film has been studied with x-ray magnetic circular dichroism using photoemission electron microscopy. The FM phase is magnetized…
We consider a mesoscopic mechanism of the exchange interaction in a system of alternating ferromagnetic/nonmagnetic metallic layers. In the case of small mesoscopic samples the sign and the amplitude of the exchange energy turn out to be…