相关论文: Galvanomagnetic effects in graphene

Unlike regular electron spin, the pseudospin degeneracy of Fermi points in graphene does not couple directly to magnetic field. Therefore, graphene provides a natural vehicle to observe the integral and fractional quantum Hall physics in an…

Strong Goos-H\"anchen (GH) effect at a prism-graphene interface in the quantum Hall effect (QHE) condition is reported. Based on the full quantum description of the temperature-dependent surface conductivity of graphene present in the…

The fate of the low-temperature conductance at the charge-neutrality (Dirac) point in a single sheet of graphene is investigated down to 20 mK. As the temperature is lowered, the peak resistivity diverges with a power-law behavior and…

The magnetic properties of zig-zag graphene nanoflakes (ZGNF) are investigated within the framework of the dynamical mean-field theory. At half-filling and for realistic values of the local interaction, the ZGNF is in a fully compensated…

Highly-doped graphene samples show the conductance reduced and the shot-noise power enhanced compared to standard ballistic systems in two-dimensional electron gas. These features can be understood within a model assuming incoherent…

We study hydrodynamic electron magnetotransport in graphene devices. We show that in these systems a distinct mechanism of magnetoresistance appears, which is absent in systems with Galilean-invariant electron liquid. The resulting…

In this comment it is pointed out that the electron velocity of the same order as observed in graphene had been measured in GaAs submicron devices long ago. Particle- antiparticle asymmetry related with electron and hole effective masses in…

A drastic modification of electronic band structure is predicted in bilayer graphene when it is placed between two ferromagnetic insulators. Due to the exchange interaction with the proximate ferromagnet, the electronic energy dispersion in…

We study the optical response of a suspended graphene field-effect transistor in magnetic fields of up to 9 T (quantum Hall regime). With an illumination power of only 3 {\mu}W, we measure a photocurrent of up to 400 nA, corresponding to a…

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a…

We have measured the quantum Hall effect in monolayer graphene samples that were exposed to a cold hydrogen plasma leading to a hydrogenation level of a few percent. Compared to pristine graphene, the Landau level distance significantly…

We discuss the renormalization of the polarizability of a nanoparticle in the presence of either (i) a continuous graphene sheet or (ii) a plasmonic graphene grating, taking into account retardation effects. Our analysis demonstrates that…

Starting from the graphene lattice tight-binding Hamiltonian with an on-site U and long-range Coulomb repulsion, we derive an interacting continuum Dirac theory governing the low-energy behavior of graphene in an applied magnetic field.…

The effect of an Aharonov-Bohm (AB) pseudo magnetic field on a two dimensional electron gas in graphene is investigated. We consider it modeled as in the usual AB effect but since such pseudo field is supposed to be induced by elastic…

The effects of electron interaction on the magnetoconductance of graphene nanoribbons (GNRs) are studied within the Hartree approximation. We find that a perpendicular magnetic field leads to a suppression instead of an expected improvement…

The electronic structure, bonding and magnetism in graphene containing vacancies are studied using density-functional methods. The single-vacancy graphene ground state is spin polarized and structurally flat. The unpolarized state is non…

The proximity-induced couplings in graphene due to the vicinity of a ferromagnetic insulator are analyzed. We combine general symmetry principles and simple tight-binding descriptions to consider different orientations of the magnetization.…

We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate.…

Further development of the graphene field-effect transistors (GFETs) for high-frequency electronics requires accurate evaluation and study of the mobility of charge carriers in a specific device. Here, we demonstrate that the mobility in…

We consider the orbital magnetic properties of non-interacting charge carriers in graphene-based nanostructures in the low-energy regime. The magnetic response of such systems results both, frombulk contributions and from confinement…