相关论文: Nd induced Mn spin-reorientation transition in NdM…
Polycrystalline thin films of double layer manganite La_1.4Ca_1.6Mn_2O_7 (DLCMO) have been deposited by nebulized spray pyrolysis on single crystal LaAlO_3 substrates. These single phase films having grain size in the range 70-100 nm…
Quasi-one-dimensional RbMn$_{6}$Bi$_{5}$, the first pressure-induced ternary Mn-based superconductor, exhibits a phase diagram analogous to those of cuprate and iron-based superconductors, with superconductivity neighboring…
New fluoropnictides BaMnPnF with Pn = As, Sb, Bi, are synthesized by stoichiometric reaction of elements with BaF\_2. The compounds crystallize in the tetragonal P4/nmm (No. 129, Z = 2) space group, with the ZrCuSiAs-type structure, as…
Systematically magnetic and magnetothermal measurements at temperatures down to 2 K and magnetic fields up to 13.5 Tesla for Gd(OH)3 Single Crystal Nanowires - Quasi-1D Large Spin (S = -7/2) Chain Antiferromagnet have been conducted. We…
Measurements of magnetization, specific heat, electrical resistivity, Hall effect, and magnetoresistance on single crystalline samples of LaFeAsO grown in a NaAs flux are reported. While this material is known to be a semimetal, the…
We report a microscopic investigation of the magnetic structure and electronic properties of LaMnSi in its antiferromagnetic (AFM) state using nuclear magnetic resonance (NMR). Field-swept $^{55}$Mn- and $^{139}$La-NMR spectra, as well as…
Na0.5CoO2 exhibits a metal-insulator transition at 53 K upon cooling. The nature of another transition at 88 K has not been fully clarified yet. We report the results of measurements of the electrical conductivity, the magnetic…
To extend the Moores law in the 5 nm node, a large number of two dimensional (2D) materials and devices have been thoroughly researched, among which the cold metals 2H MS2 (M = Nb, Ta) with unique band structures are expected to achieve the…
A review is given of advances in the field of carrier-controlled ferromagnetism in Mn-based diluted magnetic semiconductors and their nanostructures. Experimental results for III-V materials, where the Mn atoms introduce both spins and…
$\alpha$-MnTe is an antiferromagnetic semiconductor with above room temperature $T_N$ = 310 K, which is promising for spintronic applications. Recently, it was reported to be an altermagnet, containing bands with momentum-dependent spin…
We report measurements of the temperature-dependent anisotropic resistivity and in-plane magnetoresistance on single crystals of the tetragonal heavy-fermion antiferromagnet (TN = 3.8 K) CeRhIn5. The measurements are reported in the…
Crystallographic, electronic transport, thermal and magnetic properties are reported for SrMn2As2 and CaMn2As2 single crystals grown using Sn flux. Rietveld refinements of powder x-ray diffraction data show that the two compounds are…
Magnetic properties of more than twenty Cantor alloy samples of varying composition were investigated over a temperature range of 5 K to 300 K and in fields of up to 70 kOe using magnetometry and muon spin relaxation. Two transitions are…
Antiferromagnets with zero net magnetic moment, strong anti-interference and ultrafast switching speed have potential competitiveness in high-density information storage. Body centered tetragonal antiferromagnet Mn2Au with opposite spin…
A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at…
We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO2 films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin…
Correlation between structural/microstructural and magneto-thermal transport properties of FeAs-based SmFeAsO and SmFeAsO0.85F0.15 has been studied in detail. The Rietveld analysis of room temperature powder X-ray diffraction (XRD) data…
We report on the longitudinal magnetoresistance (MR) in thin metal films on an Ising-type antiferromagnetic insulator, Na5Co15.5Te6O36 (NCTO). Steep changes in the MR spectra with hysteresis were observed at spin-flip transitions driven by…
Mn$_2$Au is an important antiferromagnetic (AF) material for spintronics applications. Due to its very high N\'eel temperature of about 1500 K, some of the basic properties are difficult to explore, such as the AF susceptibility and the…
Conventional spin Hall nano-oscillators (SHNOs) face fundamental power limitations due to the low anisotropic magnetoresistance (AMR < 0.3%) of ferromagnetic layers. To address this, we developed a synthetic antiferromagnetic spin-valve…