相关论文: Quantum Anomalous Hall State in Bilayer Graphene
There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the other is its relativistic counterpart recently observed in…
The quantum anomalous Hall effect (QAHE), the last member of Hall family, was predicted to exhibit quantized Hall conductivity e2/h without any external magnetic field. The QAHE shares a similar physical phenomenon with the integer quantum…
The quantum Hall (QH) effect in two-dimensional (2D) electrons and holes in high quality graphene samples is studied in strong magnetic fields up to 45 T. QH plateaus at filling factors $\nu=0,\pm 1,\pm 4$ are discovered at magnetic fields…
The natures of the ground state in a $\nu_{\rm T}=1$ bilayer quantum Hall system at a variety of layer spacing are investigated. At small layer separations the system exhibits spontaneous interlayer phase coherence. It is claimed that the…
We introduce a novel two-dimensional electronic system with ultrastrong interlayer interactions, namely twisted bilayer graphene with a large twist angle, as an ideal ground for realizing interlayer-coherent excitonic condensates. In these…
A two-dimensional electron system exposed to a strong magnetic field produces a plethora of strongly interacting fractional quantum Hall (FQH) states, the complex topological orders of which are revealed through exotic emergent particles,…
The fractional quantum anomalous Hall effect (FQAHE) is a fascinating emergent quantum state characterized by fractionally charged excitations in the absence of magnetic field,which could arise from the intricate interplay between electron…
Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise…
We present an approach to the fractional quantum Hall effect observed in grapheme (GFQHE), basing us on the model developed previously for the fractional quantum Hall effect in a two-dimensional electron system embedded in a quantum well…
Electronic localization is numerically studied in disordered bilayer graphene with an electric-field induced energy gap. Bilayer graphene is a zero-gap semiconductor, in which an energy gap can be opened and controlled by an external…
We investigate the quantum Hall (QH) states near the charge neutral Dirac point of a high mobility graphene sample in high magnetic fields. We find that the QH states at filling factors $\nu=\pm1$ depend only on the perpendicular component…
The quantum Hall (QH) effect, the quantum spin Hall (QSH) effect and the quantum valley Hall (QVH) effect are three peculiar topological insulating phases in graphene. They are characterized by three different types of edge states. These…
The understanding of the Chern insulator and anomalous quantum Hall effect (AQHE) in terms of chiral edge states in confined systems is the first aim of the paper. The model we use consists in a diatomic square lattice with hopping to the…
We propose a quantum electronic device based on strained graphene nanoribbon. Mechanical strain, internal exchange field and spin-orbit couplings (SOCs) have been exploited as principle parameters to tune physical properties of the device.…
The puzzle of recently observed insulating phase of graphene at filling factor $\nu=0$ in high magnetic field quantum Hall (QH) experiments is investigated. We show that the magnetic field driven Peierls-type lattice distortion (due to the…
We present a microscopic theory for collective excitations of quantum anomalous Hall ferromagnets (QAHF) in twisted bilayer graphene. We calculate the spin magnon and valley magnon spectra by solving Bethe-Salpeter equations, and verify the…
The N=0 Landau levels of ABC and ABA trilayer graphene both have approximate 12-fold degeneracies that are lifted by interactions to produce strong quantum Hall effects (QHE) at all integer filling factors between nu=-6 and nu=6. We discuss…
A novel topological insulator with tunable edge states, called quantum spin-quantum anomalous Hall (QSQAH) insulator, is predicted in a heterostructure of a hydrogenated Sb (SbH) monolayer on a LaFeO3 substrate by using ab initio methods.…
We analyze the electronic properties of a simple stacking defect in Bernal graphite. We show that a bound state forms, which disperses as $|\bfk-\bfK|^3$ in the vicinity of either of the two inequivalent zone corners $\bfK$. In the presence…
The lowest Landau level of bilayer graphene has an octet of internal degrees of freedom, composed from spin, valley and orbital two-level systems. Dominance of $n=0$ orbitals over $n=1$ orbitals in low energy quantum fluctuations leads to…