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相关论文: Coherent Control of Rydberg States in Silicon

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One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band…

Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes.…

材料科学 · 物理学 2009-11-10 C. J. Wellard , L. C. L Hollenberg , L. M. Kettle , H. -S. Goan

In this study, we demonstrate coherent optical excitation of the electronic Raman transition between the $1s\left(A_1\right)$ and $1s\left(E\right)$ split states of phosphorus donor in crystalline silicon. The dynamics of the generated…

介观与纳米尺度物理 · 物理学 2026-02-05 Adam Gindl , Martin Čmel , František Trojánek , Petr Malý , Zbyněk Šobáň , Alexandr Pošta , Martin Kozák

We demonstrate the coherent control and electrical readout of the nuclear spins of ionized phosphorus donors in natural silicon. By combining pulsed illumination with coherent electron spin manipulation, we selectively ionize the donor…

材料科学 · 物理学 2012-01-17 Lukas Dreher , Felix Hoehne , Martin Stutzmann , Martin S. Brandt

We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multi-frequency pump-probe experiment in pulsed electrically…

材料科学 · 物理学 2010-02-02 Felix Hoehne , Hans Huebl , Bastian Galler , Martin Stutzmann , Martin S. Brandt

The ability to probe the spin properties of solid state systems electrically underlies a wide variety of emerging technology. Here, we extend electrical readout of the nuclear spin states of phosphorus donors in silicon to the coherent…

其他凝聚态物理 · 物理学 2015-05-30 D. R. McCamey , C. Boehme , G. W. Morley , J. van Tol

Quantum confinement, magnetic-field effects, and laser coupling with the two low-lying states of electrons bound to donor impurities in semiconductors may be used to coherently manipulate the two-level donor system in order to establish the…

软凝聚态物质 · 物理学 2009-11-10 H. S. Brandi , A. Latge , L. E. Oliveira

We show how to achieve optical, spin-selective transitions from the ground state to excited orbital states of group-V donors (P, As, Sb, Bi) in silicon. We consider two approaches based on either resonant, far-infrared (IR) transitions of…

介观与纳米尺度物理 · 物理学 2015-11-17 M. J. Gullans , J. M. Taylor

Donor spins in silicon are some of the most promising qubits for upcoming solid-state quantum technologies. The nuclear spins of phosphorus donors in enriched silicon have among the longest coherence times of any solid-state system as well…

Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term…

其他凝聚态物理 · 物理学 2015-05-13 H. Morishita , L. S. Vlasenko , H. Tanaka , K. Semba , K. Sawano , Y. Shiraki , M. Eto , K. M. Itoh

The ability to prepare, optically read out and coherently control single quantum states is a key requirement for quantum information processing. Optically active solid state emitters have emerged as promising candidates with their prospects…

量子物理 · 物理学 2017-03-08 Yu Zhou , Abdullah Rasmita , Ke Li , Qihua Xiong , Igor Aharonovich , Wei-bo Gao

Gate control of phosphorus donor based charge qubits in Si is investigated using a tight-binding approach. Excited molecular states of P2+ are found to impose limits on the allowed donor separations and operating gate voltages. The effects…

介观与纳米尺度物理 · 物理学 2011-04-05 Rajib Rahman , Seung H. Park , Gerhard Klimeck , Lloyd C. L. Hollenberg

This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which…

Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances…

Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although…

介观与纳米尺度物理 · 物理学 2020-12-29 Philipp Ross , Brendon C. Rose , Cheuk C. Lo , Mike L. W. Thewalt , Alexei M. Tyryshkin , Stephen A. Lyon , John J. L. Morton

Excitations of impurity complexes in semiconductors can not only provide a route to fill the terahertz gap in optical technologies, but can also connect local quantum bits to scale up solid-state quantum-computing devices. However, taking…

介观与纳米尺度物理 · 物理学 2021-08-04 Wei Wu , A. J. Fisher

We present a theoretical analysis of a microwave spectroscopy experiment on a charge qubit defined by a P$_2^+$ donor pair in silicon, for which we calculate Hamiltonian parameters using the effective-mass theory of shallow donors. We solve…

其他凝聚态物理 · 物理学 2009-11-11 C. J. Wellard , L. C. L. Hollenberg , S. Das Sarma

We realize a coherent transfer between a laser-accessible low-angular-momentum Rydberg state and the circular Rydberg level with maximal angular momentum. This transfer is induced by a radiofrequency field with a high-purity $\sigma^+$…

Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing.…

介观与纳米尺度物理 · 物理学 2015-06-23 C. C. Lo , M. Urdampilleta , P. Ross , M. F. Gonzalez-Zalba , J. Mansir , S. A. Lyon , M. L. W. Thewalt , J. J. L. Morton

The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we calculate these energy levels from first principles using…

介观与纳米尺度物理 · 物理学 2016-12-05 J. S. Smith , A. Budi , M. C. Per , N. Vogt , D. W. Drumm , L. C. L. Hollenberg , J. H. Cole , S. P. Russo
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