相关论文: Trapping-detrapping fluctuations in organic space-…
In the absence of directional motion it is often hard to recognize athermal fluctuations. Probability currents provide such a measure in terms of the rate at which they enclose area in the reduced phase space. We measure this area enclosing…
We report on charge transport and current fluctuations in a single bacteriorhodpsin protein in a wide range of applied voltages covering direct and injection tunnelling regimes. The satisfactory agreement between theory and available…
This article presents a theoretical model for the calculation of the current impulse from X-ray induced conductivity in wide-gap semiconductors that contain different types of traps and recombination centres. The absorption of one X-ray…
We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer…
Two mechanisms of decoherence in ion traps are studied, specially related to the experiment [Kielpinski et al., Science 291 (2001) 1013]. Statistical hypothesis are made about the unknown variables and the expected behaviour of the…
We present a theory for tunneling spectroscopy in a break-junction semiconductor device for materials in which the electronic conduction mechanism is hopping transport. Starting from the conventional expression for the hopping current we…
Van der Pol oscillators are prototypical self-sustaining oscillators which have been used to model nonlinear processes in biological and other classical processes. In this work, we investigate how quantum fluctuations affect phase-locking…
The nonequilibrium activity taking place in a living cell can be monitored with a tracer embedded in the medium. While microrheology experiments based on optical manipulation of such probes have become increasingly standard, we put forward…
The single-particle density of states and the tunneling conductance are studied for a two-dimensional BCS-like Hamiltonian with a d_{x^2-y^2}-gap and phase fluctuations. The latter are treated by a classical Monte Carlo simulation of an XY…
We present a new model to identify natural fluctuations in fluids, allowing us to describe localization phenomena in the transport of electrons, positrons and positronium through non-polar fluids. The theory contains no free parameters and…
A trapped ion immersed in a neutral bath shows long-lived atom-ion complexes that significantly alter its chemical properties, and, thus the ion stability. In this work, we present a general study of trapped ion-atom scattering with the ion…
We propose a model of $1/f$ noise in semiconductors based on the drift of individual charge carriers and their interaction with the trapping centers. We assume that the trapping centers are homogeneously distributed in the material. The…
An analysis of the oxide trapped charge noise in a MOSFET operated down to deep cryogenic temperatures is proposed. To this end, a revisited derivation of the interface trap conductance Gp and oxide trapped charge noise SQt at the SiO2/Si…
An optical trapping scheme is proposed by which ultrashort low-amplitude radiations, co-propagating with a continuous train of temporal pulses in a hollow-core photonic crystal fiber filled with Raman-inactive noble gases, can be trapped…
The inter-device mismatch and intra-device temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability con-cerned with stochastic oxide charge trapping and…
The theory of current transport in a narrow superconducting channel accounting for thermal fluctuations is developed. These fluctuations result in the appearance of small but finite dissipation in the sample. The value of corresponding…
Ion traps are a versatile tool to study nonequilibrium statistical physics, due to the tunability of dissipation and nonlinearity. We propose an experiment with a chain of trapped ions, where dissipation is provided by laser heating and…
We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH…
This note illustrates the possibility in simple loaded string models of trapping most of the system energy in a single degree of freedom for very long times, demonstrating in particular that the robustness of the trapping is enhanced by…
We describe a novel method to measure the surface charge densities on optical fibers placed in the vicinity of a trapped ion, where the ion itself acts as the probe. Surface charges distort the trapping potential, and when the fibers are…