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相关论文: Carrier Multiplication in Graphene

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The remarkable gapless and linear band structure of graphene opens up new carrier relaxation channels bridging the valence and the conduction band. These Auger scattering processes change the number of charge carriers and can give rise to a…

介观与纳米尺度物理 · 物理学 2017-01-17 Ermin Malic , Torben Winzer , Florian Wendler , Andreas Knorr

Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging…

The linear, gapless bandstructure of graphene provides ideal conditions for Auger processes. They are of great importance for fundamental research and technological applications, since they qualitatively change the carrier dynamics. Time-,…

介观与纳米尺度物理 · 物理学 2015-01-20 Torben Winzer , Ermin Malic

Graphene is emerging as a viable alternative to conventional optoelectronic, plasmonic, and nanophotonic materials. The interaction of light with carriers creates an out-of-equilibrium distribution, which relaxes on an ultrafast timescale…

介观与纳米尺度物理 · 物理学 2013-06-25 D. Brida , A. Tomadin , C. Manzoni , Y. J. Kim , A. Lombardo , S. Milana , R. R. Nair , K. S. Novoselov , A. C. Ferrari , G. Cerullo , M. Polini

Carrier multiplication is a many-particle process giving rise to the generation of multiple electron-hole pairs. This process holds the potential to increase the power conversion efficiency of photovoltaic devices. In graphene, carrier…

介观与纳米尺度物理 · 物理学 2014-10-27 Florian Wendler , Andreas Knorr , Ermin Malic

The conversion of light into free electron-hole pairs constitutes the key process in the fields of photodetection and photovoltaics. The efficiency of this process depends on the competition of different relaxation pathways and can be…

介观与纳米尺度物理 · 物理学 2013-04-24 K. J. Tielrooij , J. C. W. Song , S. A. Jensen , A. Centeno , A. Pesquera , A. Zurutuza Elorza , M. Bonn , L. S. Levitov , F. H. L. Koppens

The dynamics of photo-generated electron-hole pairs in solids are dictated by many-body interactions such as electron-electron and electron-phonon scattering. Hence, understanding and controlling these scattering channels is crucial for…

材料科学 · 物理学 2016-07-13 Isabella Gierz

Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging…

Strong electron-electron interactions in graphene are expected to result in multiple-excitation generation by the absorption of a single photon. We show that the impact of carrier multiplication on photocurrent response is enhanced by very…

介观与纳米尺度物理 · 物理学 2011-11-29 Justin C. W. Song , Mark S. Rudner , Charles M. Marcus , Leonid S. Levitov

We present a microscopic study on current generation in graphene in response to an electric field. While scattering is generally considered to reduce the current, we reveal that in graphene Auger processes give rise to a current enhancement…

介观与纳米尺度物理 · 物理学 2017-06-09 Roland Jago , Florian Wendler , Ermin Malic

Long lifetimes of hot carriers can lead to qualitatively new types of responses in materials. The magnitude and time scales for these responses reflect the mechanisms governing energy flows. We examine the microscopics of two processes…

介观与纳米尺度物理 · 物理学 2015-04-06 Justin C. W. Song , Leonid S. Levitov

Hot electrons undergo Auger scattering during their relaxation process has a multiplication effect,which can generate more electrons above the Fermi level, thus improving the efficiency of photoelectric signal conversion.However,the…

By using Boltzmann formalism, we show that carrier multiplication by impact ionization can take place at relatively low electric fields during electronic transport in graphene. Because of the absence of energy gap, this effect is not…

介观与纳米尺度物理 · 物理学 2015-05-27 Anuj Girdhar , Jean-Pierre Leburton

We present a microscopic study on the impact of doping on the carrier dynamics in graphene, in particular focusing on its influence on the technologically relevant carrier multiplication in realistic, doped graphene samples. Treating the…

介观与纳米尺度物理 · 物理学 2017-01-17 Faris Kadi , Torben Winzer , Andreas Knorr , Ermin Malic

Detecting the carrier scattering mechanisms in a materials system is important for transport related science and engineering. The approaches of fast laser process and electrical conductivity matching were used in previous literature, which…

材料科学 · 物理学 2014-10-21 Shuang Tang , Mildred S. Dresselhaus

Photo-excitation in solids can trigger a cascade in which multiple particle-hole excitations are generated. We analyze the carrier multiplication cascade of impact excitation processes in graphene and show that the number of pair…

介观与纳米尺度物理 · 物理学 2013-04-24 Justin C. W. Song , Klaas J. Tielrooij , Frank H. L. Koppens , Leonid S. Levitov

Graphene has been intensively studied in photovoltaics focusing on emerging solar cells based on thin films, dye-sensitized, quantum dots, nanowires, etc. However, the typical efficiency of these solar cells incorporating graphene are below…

Auger scattering channels are of fundamental importance to describe and understand the non-equilibrium charge carrier dynamics in graphene. While impact excitation increases the number of carriers in the conduction band and has been…

Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly…

We develop a model for carrier generation by impact ionization in graphene, which shows that this effect is non-negligible because of the vanishing energy gap, even for carrier transport in moderate electric fields. Our theory is applied to…

介观与纳米尺度物理 · 物理学 2015-06-11 L. Pirro , A. Girdhar , Y. Leblebici , J. P. Leburton
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