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We study theoretically phonon-assisted relaxation processes in a system consisting of one or two electrons confined in two vertically stacked self-assembled quantum dots. The calculation is based on a k.p approximation for single particle…

介观与纳米尺度物理 · 物理学 2010-09-14 Krzysztof Gawarecki , Michał Pochwała , Anna Grodecka-Grad , Paweł Machnikowski

Phonon-assisted singlet-singlet relaxation in semiconductor quantum dot molecules is studied theoretically. Laterally coupled quantum dot structures doped with two electrons are considered. We take into account interaction with acoustic…

介观与纳米尺度物理 · 物理学 2009-04-27 A. Grodecka , P. Machnikowski , J. Förstner

We study theoretically phonon-assisted relaxation and tunnelling in a system composed of a quantum dot which is coupled to a quantum well. Within the kp method combined with the L\"owdin elimination, we calculate the electron states. We…

介观与纳米尺度物理 · 物理学 2017-12-11 Adam Mielnik-Pyszczorski , Krzysztof Gawarecki , Paweł Machnikowski

We study theoretically phonon-assisted relaxation and inelastic tunneling of holes in a double quantum dot. We derive hole states and relaxation rates from kp Hamiltonians and show that there is a finite distance between the dots where…

介观与纳米尺度物理 · 物理学 2012-02-07 Krzysztof Gawarecki , Paweł Machnikowski

Electron relaxation in quantum dots is studied theoretically in polar semiconductor materials, with an emphasis put on the phonon-bottleneck problem and electron-LO-phonon coupling. The theory is based on multiphonon states of the…

凝聚态物理 · 物理学 2007-05-23 K. Kral , Z. Khas

We study phonon-assisted electron tunneling in semiconductor quantum dot molecules. In particular, singlet-singlet relaxation in a two-electron doped structure is considered. The influence of Coulomb interaction is discussed via comparison…

介观与纳米尺度物理 · 物理学 2009-04-27 A. Grodecka , P. Machnikowski , J. Förstner

We study the influence of the phonon environment on the electron dynamics in a doped quantum dot molecule. A non-perturbative quantum kinetic theory based on correlation expansion is used in order to describe both diagonal and off-diagonal…

介观与纳米尺度物理 · 物理学 2015-05-20 A. Grodecka-Grad , J. Förstner

We investigate charge relaxation rates due to acoustic phonons in weakly-confined quantum dot systems, including both deformation potential and piezoelectric field interactions. Single-electron excited states lifetimes are calculated for…

介观与纳米尺度物理 · 物理学 2007-10-30 J. I. Climente , A. Bertoni , G. Goldoni , E. Molinari

A quantum dot molecule doped with a single electron in the presence of diagonal and off-diagonal carrier-phonon couplings is studied by means of a non-perturbative quantum kinetic theory. The interaction with acoustic phonons by deformation…

介观与纳米尺度物理 · 物理学 2010-11-15 A. Grodecka-Grad , J. Förstner

We probe acoustic phonon mediated relaxation between tunnel coupled exciton states in an individual quantum dot molecule in which the inter-dot quantum coupling and energy separation between exciton states is continuously tuned using static…

介观与纳米尺度物理 · 物理学 2007-10-10 T. Nakaoka , H. J. Krenner , E. C. Clark , M. Sabathil , M. Bichler , Y. Arakawa , G. Abstreiter , J. J. Finley

We study phonon-induced relaxation of quantum states of a particle (e.g., electron or proton) in a rigid double-well potential in a solid. Relaxation rate due to Raman two-phonon processes have been computed. We show that in a two-state…

统计力学 · 物理学 2008-05-05 Jaroslav Albert , E. M. Chudnovsky , D. A. Garanin

We study theoretically phonon-induced spin dynamics of two electrons confined in a self-assembled double quantum dot. We calculate the transition rates and time evolution of occupations for the spin-triplet and spin-singlet states. We…

介观与纳米尺度物理 · 物理学 2020-05-13 Krzysztof Gawarecki , Paweł Machnikowski

We have studied direct and Raman processes of the decay of electron spin states in a quantum dot via radiation of phonons corresponding to elastic twists. Universal dependence of the spin relaxation rate on the strength and direction of the…

其他凝聚态物理 · 物理学 2009-11-11 C. Calero , E. M. Chudnovsky , D. A. Garanin

We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The…

介观与纳米尺度物理 · 物理学 2014-02-12 Charles Tahan , Robert Joynt

We study and compare two analytic models of graphene quantum dots for calculating charge relaxation times due to electron-phonon interaction. Recently, charge relaxation processes in graphene quantum dots have been probed experimentally and…

介观与纳米尺度物理 · 物理学 2016-06-22 Sven Reichardt , Christoph Stampfer

The relaxation of electrons in quantum dots via phonon emission is hindered by the discrete nature of the dot levels (phonon bottleneck). In order to clarify the issue theoretically we consider a system of $N$ discrete fermionic states (dot…

介观与纳米尺度物理 · 物理学 2009-11-11 T. Stauber , R. Zimmermann , H. Castella

We theoretically study the relaxation of electron orbital states of a double quantum dot system due to two-phonon processes. In particular, we calculate how the relaxation rates depend on the separation distance between the quantum dots,…

介观与纳米尺度物理 · 物理学 2009-11-11 V. N. Stavrou , Xuedong Hu

We estimate the spin relaxation rate due to spin-orbit coupling and acoustic phonon scattering in weakly-confined quantum dots with up to five interacting electrons. The Full Configuration Interaction approach is used to account for the…

介观与纳米尺度物理 · 物理学 2009-11-13 Juan I. Climente , Andrea Bertoni , Guido Goldoni , Massimo Rontani , Elisa Molinari

We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states and to identify their relaxation paths. Exponential…

介观与纳米尺度物理 · 物理学 2019-05-29 Tobias Wenz , Jevgeny Klochan , Frank Hohls , Thomas Gerster , Vyacheslavs Kashcheyevs , Hans W. Schumacher

We study theoretically spin relaxation during phonon-assisted tunneling of a single electron in self-assembled InAs/GaAs quantum-dot molecules formed by vertically stacked dots. We find that the spin-flip tunneling rate may be as high as 1%…

介观与纳米尺度物理 · 物理学 2021-06-23 Michał Gawełczyk , Krzysztof Gawarecki
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