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相关论文: Mott transition in the Hubbard model on the anisot…

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We investigate the Mott transition in the Kagom\'e lattice Hubbard model using a cluster extension of dynamical mean field theory. The calculation of the double occupancy, the density of states, the static and dynamical spin correlation…

强关联电子 · 物理学 2009-11-11 Takuma Ohashi , Norio Kawakami , Hirokazu Tsunetsugu

We study the magnetic properties around the Mott transition in the Kagom\'e lattice Hubbard model by the cellular dynamical mean field theory combined with quantum Monte Carlo simulations. By investigating the q-dependence of the…

强关联电子 · 物理学 2009-11-11 Takuma Ohashi , Sei-ichiro Suga , Norio Kawakami , Hirokazu Tsunetsugu

Motivated by recent experiment on the Na$_4$Ir$_3$O$_8$ compound we study the Hubbard model on the "hyper-kagome lattice", which forms a three-dimensional network of corner sharing triangles, using dynamical cluster approximation (DCA)…

强关联电子 · 物理学 2009-03-18 Hunpyo Lee , Hartmut Monien

Mott transition and ferrimagnetism are studied in the Hubbard model on the anisotropic kagom\'e lattice using the variational cluster approximation and the phase diagram at zero temperature and half-filling is analyzed. The ferrimagnetic…

强关联电子 · 物理学 2015-03-17 A. Yamada , K. Seki , R. Eder , Y. Ohta

We investigate the characteristics of the metallic phase near the Mott transition in the Kagom\'e lattice Hubbard model using the cellular dynamical mean field theory. By calculating the specific heat and spin correlation functions, we…

强关联电子 · 物理学 2009-11-11 Takuma Ohashi , Sei-ichiro Suga , Norio Kawakami , Hirokazu Tsunetsugu

We investigate the Hubbard model on the anisotropic triangular lattice by means of the cellular dynamical mean field theory. The phase diagram determined in the Hubbard interaction versus temperature plane shows novel reentrant behavior in…

强关联电子 · 物理学 2009-11-13 Takuma Ohashi , Tsutomu Momoi , Hirokazu Tsunetsugu , Norio Kawakami

We investigate the Hubbard model on two typical frustrated lattices in two dimensions, the kagome lattice and the anisotropic triangular lattice, by means of the cellular dynamical mean field theory. We show that the metallic phase is…

强关联电子 · 物理学 2015-05-13 Takuma Ohashi , Tsutomu Momoi , Hirokazu Tsunetsugu , Norio Kawakami

We investigate the interplay between topological effects and Mott physics in two dimensions on a graphene-like lattice, via a tight-binding model containing an anisotropic spin-orbit coupling on the next-nearest-neighbour links and the…

强关联电子 · 物理学 2015-06-16 Tianhan Liu , Benoît Douçot , Karyn Le Hur

The Mott transition is observed experimentally in materials that are magnetically frustrated so that long-range order does not hide the Mott transition at finite temperature. The Hubbard model on the triangular lattice at half-filling is a…

强关联电子 · 物理学 2023-04-03 P. -O. Downey , O. Gingras , J. Fournier , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

Magnetic phase diagram and Mott transition are studied in the Hubbard model on the anisotropic triangular lattice at zero temperature and half-filling by the variational cluster approximation, taking into account N\'eel, 120$^\circ$ N\'eel,…

强关联电子 · 物理学 2015-06-18 A. Yamada

We investigate the Mott transitions in two-orbital Hubbard systems. Applying the dynamical mean field theory and the self-energy functional approach, we discuss the stability of itinerant quasi-particle states in each band. It is shown that…

强关联电子 · 物理学 2009-11-11 A. Koga , K. Inaba , N. Kawakami

The anisotropic degenerate two-orbital Hubbard model is studied within dynamical mean-field theory at low temperatures. High-precision calculations on the basis of a refined quantum Monte Carlo (QMC) method reveal that two distinct…

强关联电子 · 物理学 2007-05-23 C. Knecht , N. Blümer , P. G. J. van Dongen

The anisotropic two-orbital Hubbard model is investigated at low temperatures using high-precision quantum Monte Carlo (QMC) simulations within dynamical mean-field theory (DMFT). We demonstrate that two distinct orbital-selective Mott…

强关联电子 · 物理学 2015-06-25 N. Blümer , C. Knecht , K. Pozgajcic , P. G. J. van Dongen

A half-filled-band Hubbard model on an anisotropic triangular lattice (t in two bond directions and t' in the other) is studied using an optimization variational Monte Carlo method, to consider the Mott transition and superconductivity…

超导电性 · 物理学 2009-11-11 Tsutomu Watanabe , Hisatoshi Yokoyama , Yukio Tanaka , Jun-ichiro Inoue

Spin-liquid behavior was recently suggested experimentally in the moderately one-dimensional organic compound $\kappa$-H$_3$(Cat-EDT-TTF)$_2$. This compound can be modeled by the one-band Hubbard model on the anisotropic triangular lattice…

强关联电子 · 物理学 2016-12-28 S. Acheche , A. Reymbaut , M. Charlebois , D. Sénéchal , A. -M. S. Tremblay

We investigate nonmagnetic metal-insulator transition in the 1/5-depleted square lattice Hubbard model at half-filling within the 8-site cellular dynamical mean field theory. We find that a metal-insulator transition without any signatures…

强关联电子 · 物理学 2014-08-19 Yuki Yanagi , Kazuo Ueda

Based on dynamical cluster approximation (DCA) quantum Monte Carlo simulations, we study the interaction-driven Mott metal-insulator transition (MIT) in the half-filled Hubbard model on the anisotropic two-dimensional triangular lattice,…

强关联电子 · 物理学 2015-04-06 Hung T. Dang , Xiao Yan Xu , Kuang-Shing Chen , Zi Yang Meng , Stefan Wessel

The Mott transition is a paradigmatic phenomenon where Coulomb interactions between electrons drive a metal-insulator phase transition. It is extensively studied within the Hubbard model, where a quantum critical transition occurs at a…

强关联电子 · 物理学 2025-10-20 Ankur Majumder , Sudeshna Sen

We investigate the half-filled Hubbard model with spatially alternating interactions by means of the two-site dynamical mean-field theory. It is found that a single Mott transition occurs when two kinds of interactions are increased. This…

强关联电子 · 物理学 2012-04-20 Takamitsu Saitou , Akihisa Koga , Atsushi Yamamoto

At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…

强关联电子 · 物理学 2019-02-20 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay
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