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We investigate the low temperature electron transport properties of chemically reduced graphene oxide (RGO) sheets with different carbon sp2 fractions of 55 to 80 %. We show that in the low bias (Ohmic) regime, the temperature (T) dependent…

介观与纳米尺度物理 · 物理学 2015-06-11 Daeha Joung , Saiful I. Khondaker

Ballistic graphene samples in a multimode regime show the sub-Sharvin charge transport, characterized by the conductance reduced by a factor of $\pi/4$ comparing to standard Sharvin contacts in two-dimensional electron gas, and the…

介观与纳米尺度物理 · 物理学 2022-11-02 Adam Rycerz , Piotr Witkowski

We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrouoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a…

介观与纳米尺度物理 · 物理学 2014-04-15 Jan Dauber , Bernat Terrés , Christian Volk , Stefan Trellenkamp , Christoph Stampfer

Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in…

介观与纳米尺度物理 · 物理学 2016-07-14 I. Shlimak , E. Zion , A. V. Butenko , L. Wolfson , V. Richter , Yu. Kaganovskii , A. Sharoni , A. Haran , D. Naveh , E. Kogan , M. Kaveh

We calculate the shot noise power in ballistic graphene using the kinetic equation approach based on the Keldysh technique. We find that the local energy distribution function obeys Poisson's equation, indicating a mapping into a diffusive…

介观与纳米尺度物理 · 物理学 2013-05-29 Anatoly Golub , Baruch Horovitz

Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show…

介观与纳米尺度物理 · 物理学 2015-01-30 Wan Sik Hwang , Kristof Tahy , Xuesong Li , Huili , Xing , Alan C. Seabaugh , Chun-Yung Sung , Debdeep Jena

We study the transport properties of graphene nanoribbons of standardized 30 nm width and varying lengths. We find that the extent of the gap observed in transport as a function of Fermi energy in these ribbons (the "transport gap") does…

介观与纳米尺度物理 · 物理学 2010-03-11 Patrick Gallagher , Kathryn Todd , David Goldhaber-Gordon

We calculate the shot noise generated by evanescent modes in graphene for several experimental setups. For two impurity-free graphene strips kept at the Dirac point by gate potentials, separated by a long highly doped region, we find that…

介观与纳米尺度物理 · 物理学 2012-07-13 A. D. Wiener , M. Kindermann

We propose systems that allow a tuning of the phonon transmission function T($\omega$) in graphene nanoribbons by using C$^{13}$ isotope barriers, antidot structures, and distinct boundary conditions. Phonon modes are obtained by an…

介观与纳米尺度物理 · 物理学 2015-07-15 P. Scuracchio , A. Dobry , F. Peeters , S. Costamagna

Peculiar electronic properties of graphene, including the universal dc conductivity and the pseudodiffusive shot noise, are usually attributed to a small vicinity of the charge-neutrality point, away from which electron's effective mass…

介观与纳米尺度物理 · 物理学 2025-05-01 Adam Rycerz

Graphene electronics has motivated much of graphene science for the past decade. A primary goal was to develop high mobility semiconducting graphene with a band gap that is large enough for high performance applications. Graphene ribbons…

We analyze an AC-driven dimer chain connected to a strongly biased electron source and drain. It turns out that the resulting transport exhibits fingerprints of topology. They are particularly visible in the driving-induced current…

介观与纳米尺度物理 · 物理学 2016-10-18 Michael Niklas , Mónica Benito , Sigmund Kohler , Gloria Platero

We report low-temperature shot noise measurements of short diffusive Au wires attached to electron reservoirs of varying sizes. The measured noise suppression factor compared to the classical noise value $2e\left| I\right| $ strongly…

介观与纳米尺度物理 · 物理学 2016-08-15 M. Henny , S. Oberholzer , C. Strunk , C. Schönenberger

In this paper, we propose a combined modeling of molecular mechanics (MM) and the tight-binding (TB) approach, which enables us to study the effect of factors such as external local forces, constraints, and vacancy defects on electronic…

计算物理 · 物理学 2021-03-11 Mahnoosh Rostami , Isa Ahmadi , Farhad Khoeini

We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon(GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic band gap. The experimentally…

A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…

The size-dependent electrical resistivity of single-layer graphene ribbons has been studied experimentally for ribbon widths from 16 nm to 320 nm. The experimental findings are that the resistivity follows a more dramatic trend than that…

介观与纳米尺度物理 · 物理学 2019-05-24 Zhuocong Xiao , Colm Durkan

Graphene nanoribbons display an imperfectly understood transport gap. We measure transport through nanoribbon devices of several lengths. In nanoribbons of length greater than or equal to 250 nm we observe transport through multiple quantum…

介观与纳米尺度物理 · 物理学 2009-01-02 Kathryn Todd , Hung-Tao Chou , Sami Amasha , David Goldhaber-Gordon

We investigate the low-lying excitation spectrum and ground-state properties of narrow graphene nanoribbons with zigzag edge configurations. Nanoribbons of comparable widths have been synthesized very recently [P. Ruffieux, \emph{et al.}…

强关联电子 · 物理学 2016-10-21 I. Hagymasi , O. Legeza

We report electrical transport measurements on individual disordered carbon nanotubes, grown catalytically in a nanoporous anodic aluminum oxide template. In both as-grown and annealed types of nanotubes, the low-field conductance shows as…

介观与纳米尺度物理 · 物理学 2015-06-25 D. P. Wang , D. E. Feldman , B. R. Perkins , A. J. Yin , G. H. Wang , J. M. Xu , A. Zaslavsky