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相关论文: Relaxation Dynamics of Photocarriers in One-Dimens…

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We present a theory for the recombination of (charged) holons and doublons in one-dimensional organic Mott insulators, which is responsible for the decay of a photoexcited metallic state. Due to the charge-spin separation, the dominant…

强关联电子 · 物理学 2015-11-18 Zala Lenarčič , Martin Eckstein , Peter Prelovšek

We examine the single-particle excitation spectrum in the one-dimensional Hubbard-Holstein model at half-filling by performing the dynamical density matrix renormalization group (DDMRG) calculation. The DDMRG results are interpreted as…

强关联电子 · 物理学 2009-11-11 Hiroaki Matsueda , Takami Tohyama , Sadamichi Maekawa

We study the spectral and transport properties of a Mott insulator driven by a static electric field into a non-equilibrium steady state. For the dissipation, we consider two mechanisms: Wide-band fermion reservoirs and phonons included…

强关联电子 · 物理学 2022-09-19 T. M. Mazzocchi , P. Gazzaneo , J. Lotze , E. Arrigoni

We compute the time-resolved photoemission spectrum after photo-doping in a two-dimensional Mott-Hubbard insulator. We find that the relaxation rate of high-energy photo-doped electrons in the paramagnetic phase scales with the strength of…

强关联电子 · 物理学 2016-02-26 Martin Eckstein , Philipp Werner

We examine the third-order non-linear optical response of a one-dimensional Mott insulator coupled with phonons. The Mott insulator is described by an extended Hubbard-Holstein model. The third harmonic generation (THG) of the model is…

强关联电子 · 物理学 2015-04-17 Shigetoshi Sota , Seiji Yunoki , Takami Tohyama

In this work we investigate charge transport in one-dimensional (1D) insulators via semi-classical and perturbative renormalization group (RG) methods. We consider the problem of electron-electron, electron-phonon and electron-two-level…

强关联电子 · 物理学 2009-11-07 Chun-Min Chang , A. H. Castro Neto , A. R. Bishop

Using a nonequilibrium implementation of the extended dynamical mean field theory (EDMFT) we simulate the relaxation after photo excitation in a strongly correlated electron system with antiferromagnetic spin interactions. We consider the…

强关联电子 · 物理学 2018-06-20 Nikolaj Bittner , Denis Golež , Hugo U. R. Strand , Martin Eckstein , Philipp Werner

We characterize the response of a Mott insulating system to a static electric field in terms of its conducting and spectral properties. Dissipation is included by a coupling to fermionic baths and to either optical or acoustic phonons. This…

强关联电子 · 物理学 2023-05-10 Tommaso Maria Mazzocchi , Daniel Werner , Paolo Gazzaneo , Enrico Arrigoni

We study the relaxation dynamics of photo-carriers in the paramagnetic Mott insulating phase of the half-filled two-band Hubbard model. Using nonequilibrium dynamical mean field theory, we excite charge carriers across the Mott gap by a…

强关联电子 · 物理学 2017-10-11 Hugo U. R. Strand , Denis Golež , Martin Eckstein , Philipp Werner

We study a model for photovoltaic energy collection consisting of a Mott insulating layer in presence of acoustic phonons, coupled to two wide-band fermion leads at different chemical potentials and driven into a nonequilibrium steady state…

强关联电子 · 物理学 2022-12-21 Paolo Gazzaneo , Tommaso Maria Mazzocchi , Jan Lotze , Enrico Arrigoni

We theoretically investigate the energy relaxation rate of magnons and phonons near the resonance points to clarify the underlying mechanism of heat transport in ferromagnetic materials. We find that the simple two-temperature model is…

介观与纳米尺度物理 · 物理学 2020-09-28 Qing Xi , Bin Liu , Zhong Shi , Tsuneyoshi Nakayama , Jun Zhou , Baowen Li

We theoretically study photoemission spectra for photodoped one-dimensional Mott insulators that can host excitons, and show that their spectral characteristics differ qualitatively from those of photodoped semiconductors. In conventional…

强关联电子 · 物理学 2026-03-20 Taiga Nakamoto , Yuta Murakami , Naoto Tsuji

Analysis of an exactly soluble model of phonons coupled to a carrier in a quantum dot provides a clear illustration of a phonon bottleneck to relaxation. The introduction of three-phonon interactions leads to a broad window for relaxation…

凝聚态物理 · 物理学 2007-05-23 S. A. Levetas , M. J. Godfrey , P. Dawson

We investigate the resonant two-magnon Raman scattering in two-dimensional (2D) Mott insulators by using a half-filled 2D Hubbard model in the strong coupling limit. By performing numerical diagonalization calculations for small clusters,…

强关联电子 · 物理学 2007-05-23 T. Tohyama , H. Onodera , K. Tsutsui , S. Maekawa

Femtosecond relaxation of photo-excited quasiparticles in the one dimensional Mott insulator ET-F2TCNQ are measured as a function of external pressure, which is used to tune the electronic structure. By fitting the static optical properties…

We study, by means of a Monte Carlo simulator, the hot phonon effect on the relaxation dynamics in photoexcited graphene and its quantitative impact as compared to considering an equilibrium phonon distribution. Our multi-particle approach…

介观与纳米尺度物理 · 物理学 2016-02-02 José M. Iglesias , María J. Martín , Elena Pascual , Raúl Rengel

We study the photoinduced ultrafast dynamics in relativistic Mott insulators, i.e., Mott insulators with strong spin-orbit coupling. For this purpose, we consider a minimal one-band Hubbard model on lattices with square and triangular…

强关联电子 · 物理学 2020-10-20 Jiajun Li , Nagamalleswararao Dasari , Martin Eckstein

We investigate the properties of the metallic state obtained by photo-doping carriers into a Mott insulator. In a strongly interacting system, these carriers have a long life-time, so that they can dissipate their kinetic energy to a phonon…

强关联电子 · 物理学 2013-03-21 Martin Eckstein , Philipp Werner

Electron-phonon-driven charge density waves can in some circumstances allow electronic correlations to become predominant, driving a system into a Mott insulating state. New insights into both the Mott state and preceding charge density…

强关联电子 · 物理学 2021-03-31 C. J. Butler , M. Yoshida , T. Hanaguri , Y. Iwasa

Ultrafast optical pump-probe spectroscopy is used to track carrier dynamics in the large magnetoresistance material WTe$_{2}$. Our experiments reveal a fast relaxation process occurring on a sub-picosecond time scale that is caused by…

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