相关论文: Reply to "Comment on Anderson Transition in Disord…

We comment on a recent letter by Amini et al. (EPL 87, 37002 (2009)) concerning the existence of a mobility edge in disordered graphene.

A basis of Bloch waves, distorted locally by the random potential, is introduced for electrons in the Anderson model. Matrix elements of the Hamiltonian between these distorted waves are averages over infinite numbers of independent…

Recent experiments on non-interacting ultra-cold atoms in correlated disorder have yielded conflicting results regarding the so-called mobility edge, i.e. the energy threshold separating Anderson localized from diffusive states. At the same…

Anderson localization is a universal phenomenon affecting non-interacting quantum particles in disorder. In three spatial dimensions it becomes particularly interesting to study because of the presence of a quantum phase transition from…

Here we address the concerns of Svintsov and Ryzhii [arXiv:1812.03764] on our article on negative Landau damping in graphene [Phys. Rev. Lett. 119, 133901 (2017)]. We prove that due to the differences between the kinetic and canonical…

A principal motivation to develop graphene for future devices has been its promise for quantum spintronics. Hyperfine and spin-orbit interactions are expected to be negligible in single-layer graphene. Spin transport experiments, on the…

We have performed first-principles calculations of graphene edge stresses, which display two interesting quantum manifestations absent from the classical interpretation: the armchair edge stress oscillates with a nanoribbon width, and the…

A comment on the paper Appl. Phys. Lett. 104, 161116 (2014).

In this work we analytically explain the origin of the mobility edge in the partially disordered random regular graphs of degree d, i.e., with a fraction $\beta$ of the sites being disordered, while the rest remain clean. It is shown that…

Our recently established criterion for the formation of extended states on tree graphs in the presence of disorder is shown to have the surprising implication that for bounded random potentials, as in the Anderson model, there is no…

The influence of plasma etched sample edges on electrical transport and doping is studied. Through electrical transport measurements the overall doping and mobility are analyzed for mono- and bilayer graphene samples. As a result the edge…

Graphene has shown impressive properties for nanoelectronics applications including a high mobility and a width-dependent bandgap. Use of graphene in nanoelectronics would most likey be in the form of graphene nanoribbons (GNRs) where the…

It is argued that Trauzettel et al. [Phys. Rev. B 75, 035305 (2007)] made some mistakes in their calculations regarding the photon-assisted transport in graphene that lead to uncoupled sidebands and emergence of step-like features in dG/dV…

Graphene has been proposed as a promising material for future nanoelectronics because of its unique electronic properties. Understanding the scaling behavior of this new nanomaterial under common experimental conditions is of critical…

In [Phys. Rev. Lett. vol. 119, p. 133901 (2017)] it was argued that two parallel graphene layers in the presence of electron drift support unstable plasmon modes. Here we show that the predicted plasmon instability is an artifact of errors…

We analyze the single particle states at the edges of disordered graphene quantum dots. We show that generic graphene quantum dots support a number of edge states proportional to circumference of the dot over the lattice constant. Our…

This comment pertains the recent manuscript by Morissette {\it et al.} [arXiv:2206.08354v1]. The authors claim to have found signatures of collective excitations in electron spin resonance experiments that would be linked to the correlated…

We show that a tight-binding one-dimensional chain composed of interacting and non-interacting atomic sites can exhibit multiple mobility edges at different values of carrier energy in presence of external electric field. Within a mean…

Electrons in graphene follow unconventional trajectories at PN junctions, driven by their pseudospintronic degree of freedom. Significant is the prominent angular dependence of transmission, capturing the chiral nature of the electrons and…

Two different points of view are available to understand the behavior of graphene at low energies. One is considering a large $N_F$ that makes graphene a semimetal, and another for small $N_F < 2.5$ that would make graphene a narrow gap…