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We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…

介观与纳米尺度物理 · 物理学 2016-07-13 J. T. Ye , M. F. Craciun , M. Koshino , S. Russo , S. Inoue , H. T. Yuan , H. Shimotani , A. F. Morpurgo , Y. Iwasa

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…

介观与纳米尺度物理 · 物理学 2015-06-05 J. Velasco , Y. Lee , L. Jing , G. Liu , W. Bao , C. N. Lau

The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and…

Using terahertz time-domain spectroscopy, the real part of optical conductivity [$\sigma_{1}(\omega)$] of twisted bilayer graphene was obtained at different temperatures (10 -- 300 K) in the frequency range 0.3 -- 3 THz. On top of a…

Magic angle twisted bilayer graphene has emerged as a powerful platform for studying strongly correlated electron physics, owing to its almost dispersionless low-energy bands and the ability to tune the band filling by electrostatic gating.…

介观与纳米尺度物理 · 物理学 2021-07-21 Nikhil Tilak , Xinyuan Lai , Shuang Wu , Zhenyuan Zhang , Mingyu Xu , Raquel de Almeida Ribeiro , Paul C Canfield , Eva Y. Andrei

The electronic structure and optical response of electrically gated bilayer graphene are studied by first-principles approaches. We have obtained the induced band gap that is in good agreement with experiment when the applied electric field…

介观与纳米尺度物理 · 物理学 2015-03-13 Li Yang

A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap $\Delta$ between the conduction and valence bands. In particular, a self…

介观与纳米尺度物理 · 物理学 2009-11-11 Edward McCann

Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a promising route to electronic applications. The gap can be either tunable through an external electric…

介观与纳米尺度物理 · 物理学 2015-05-27 Gregory M. Rutter , Suyong Jung , Nikolai N. Klimov , David B. Newell , Nikolai B. Zhitenev , Joseph A. Stroscio

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our…

介观与纳米尺度物理 · 物理学 2008-01-07 S. V. Morozov , K. S. Novoselov , M. I. Katsnelson , F. Schedin , D. C. Elias , J. A. Jaszczak , A. K. Geim

Van der Waals heterostructures obtained by artificially stacking two-dimensional crystals represent the frontier of material engineering, demonstrating properties superior to those of the starting materials. Fine control of the interlayer…

Electronic compressibility, the second derivative of ground state energy with respect to total electron number, is a measurable quantity that reveals the interaction strength of a system and can be used to characterize the orderly…

We employ a dual-gated geometry to control the band gap \Delta in bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two…

介观与纳米尺度物理 · 物理学 2015-05-19 K. Zou , J. Zhu

Bilayer graphene (BLG) with a tunable bandgap appears interesting as an alternative to graphene for practical applications, thus its transport properties are being actively pursued. Using density functional theory and perturbation analysis,…

材料科学 · 物理学 2015-05-11 Changwon Park , Junga Ryou , Suklyun Hong , Bobby Sumpter , Gunn Kim , Mina Yoon

Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…

介观与纳米尺度物理 · 物理学 2007-10-09 E. H. Hwang , S. Adam , S. Das Sarma

Despite the now vast body of two-dimensional materials under study, bilayer graphene remains unique in two ways: it hosts a simultaneously tunable band gap and electron density; and stems from simple fabrication methods. These two…

介观与纳米尺度物理 · 物理学 2016-07-19 M. K. Brinkley , D. S. L. Abergel , B. D. Clader

We investigate bilayer graphene transport in the presence of electron-hole puddles induced by long-range charged impurities in the environment. We explain the insulating behavior observed in the temperature dependent conductivity of low…

介观与纳米尺度物理 · 物理学 2010-08-24 E. H. Hwang , S. Das Sarma

We study the ground-state properties of a double layer graphene system with the Coulomb interlayer electron-electron interaction modeled within the random phase approximation. We first obtain an expression of the quantum capacitance of a…

材料科学 · 物理学 2017-09-06 Fariborz Parhizgar , Alireza Qaiumzadeh , Reza Asgari

We report a multiband transport study of bilayer graphene at high carrier densities. Employing a poly(ethylene)oxide-CsClO$_4$ solid polymer electrolyte gate we demonstrate the filling of the high energy subbands in bilayer graphene samples…

介观与纳米尺度物理 · 物理学 2015-05-28 Dmitri K. Efetov , Patrick Maher , Simas Glinskis , Philip Kim

We calculate the finite temperature compressibility for two-dimensional semiconductor systems, monolayer graphene, and bilayer graphene within the Hartree-Fock approximation. We find that the calculated temperature dependent compressibility…

介观与纳米尺度物理 · 物理学 2011-12-02 Qiuzi Li , E. H. Hwang , S. Das Sarma

The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a…

介观与纳米尺度物理 · 物理学 2010-10-07 Jun Yan , Michael S. Fuhrer