相关论文: Robust isothermal electric switching of interface …
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
The control of magnetic properties by means of an electric field is an important aspect in magnetism and magnetoelectronics. We here utilize magnetoelastic coupling in ferromagnetic/piezoelectric hybrids to realize a voltage control of…
Control of magnetism by an applied electric field is a desirable technique for the functionalization of magnetic materials. Motivated by recent experiments, we study the electric field control of the interfacial magnetism of…
Development of modern spintronic devices requires materials exhibiting specific magnetic effects. In this paper, we investigate a magnetization reversal mechanism in a [Co/Pdx]7/CoO/[Co/Pdy]7 thin-film composite where an antiferromagnet is…
Exchange bias is a unidirectional magnetic anisotropy that often arise from interfacial interaction of a ferromagnetic and antiferromagnetic layers. In this article, we show that a metallic layer with spin-orbit coupling can induces an…
The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…
The search for novel spintronic devices brings about new ways to control switching in magnetic thin-films. In this work we experimentally demonstrate a device based on thermoelectrically controlled exchange coupling. The read out signal…
We have directly imaged reversible electrical switching of the cycloidal rotation direction (magnetic polarity) in a (111)-BiFeO3 epitaxial-film device at room temperature by non-resonant x-ray magnetic scattering. Consistent with previous…
Information can be stored in magnetic materials by encoding with the direction of the magnetic moment of elements. A figure of merit for these systems is the energy needed to change the information rewrite the storage by changing the…
Hysteretic magneto-resistance of point contacts formed between non-magnetic tips and single ferromagnetic films exchange-pinned by antiferromagnetic films is investigated. The analysis of the measured current driven and field driven…
Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited…
Antiferromagnetic materials present us with rich and exciting physics, which we can exploit to open new avenues in spintronic device applications. We explore perpendicularly magnetized exchange biased systems of Pt/Co/IrMn and Pt/Co/FeMn,…
In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field…
We investigate theoretically the magnetic dynamics in a ferroelectric/ferromagnetic heterostructure coupled via strain-mediated magnetoelectric interaction. We predict an electric field-induced magnetic switching in the plane perpendicular…
Electric control of magnetism is a vision which drives intense research on magnetic semiconductors and multiferroics. Recently, also ultrathin metallic films were reported to show magnetoelectric effects at room temperature. Here we…
Models of exchange-bias in thin films have been able to describe various aspects of this technologically relevant effect. Through appropriate choices of free parameters the modelled hysteresis loops adequately match experiment, and typical…
Electric-field induced magnetization switching in multiferroic magnetoelectric devices is promising for beyond Moore's law computing. We show here that interface-coupled multiferroic heterostructures, i.e., a ferroelectric layer coupled…
Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we…
Due to the lack of a net magnetization both at the interface and in the bulk, antiferromagnets with compensated interfaces may appear incapable of influencing the phase transition in an adjacent superconductor via the spin degree of…
Converse magnetoelectric coupling in artificial multiferroics is generally modelled through three possible mechanisms: charge transfer, strain mediated or ion migration. Here we demonstrate a novel and highly reliable approach, where…