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相关论文: Dielectric function of the semiconductor hole gas

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We study the dielectric function of the homogeneous semiconductor hole liquid of p-doped bulk III-V zinc-blende semiconductors within random phase approximation. The single-particle physics of the hole system is modeled by Luttinger's…

强关联电子 · 物理学 2011-10-14 John Schliemann

We study the homogeneous interacting hole gas in $p$-doped bulk III-V semiconductors. The structure of the valence band is modelled by Luttinger's Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion…

介观与纳米尺度物理 · 物理学 2007-05-23 John Schliemann

We have calculated the density-density (Lindhard) response function of a homogeneous two-dimensional (2D) hole gas in the static (omega=0) limit. The bulk valence-band structure comprising heavy-hole (HH) and light-hole (LH) states is…

介观与纳米尺度物理 · 物理学 2015-03-17 T. Kernreiter , M Governale , U. Zuelicke

We study electrical and optical conductivities of hole gas in $p$-doped bulk III-V semiconductors described by the Luttinger Hamiltonian. We provide exact analytical expressions of the Drude conductivity, inverse relaxation time for various…

介观与纳米尺度物理 · 物理学 2016-09-29 Alestin Mawrie , Pushpajit Halder , Barun Ghosh , Tarun Kanti Ghosh

Luttinger semimetals are three-dimensional electron systems with a parabolic band touching and an effective total spin $J=3/2$. In this paper, we present an analytical theory of dielectric screening of inversion-symmetric Luttinger…

强关联电子 · 物理学 2019-10-15 Achille Mauri , Marco Polini

The effective Hamiltonian of strongly correlated electrons on a square lattice is replaced by a renormalised Hamiltonian and the factors that renormalise the kinetic energy of holes and the Heisenberg spin-spin coupling are calculated using…

强关联电子 · 物理学 2007-05-23 F. C. Zhang , C. Gros , T. M. Rice , H. Shiba

The quantization of Hall conductance in a p-type heterojunction with lateral surface quantum dot superlattice is investigated. The topological properties of the four-component hole wavefunction are studied both in r- and k-spaces. New…

介观与纳米尺度物理 · 物理学 2009-11-07 V. Ya. Demikhovskii , D. V. Khomitskiy

We have studied theoretically the effect of a tuneable lateral confinement on two-dimensional hole systems realised in III-V semiconductor heterostructures. Based on the 4x4 Luttinger description of the valence band, we have calculated…

介观与纳米尺度物理 · 物理学 2007-05-23 U. Zuelicke

The energy spectrum of a two-dimensional electron gas (2DEG) interacting with a valence-band hole is studied in the high magnetic field limit as a function of the filling factor nu and the separation d between the electron and hole layers.…

介观与纳米尺度物理 · 物理学 2009-10-31 Arkadiusz Wojs , Kyung-Soo Yi , John J. Quinn

Due to strong spin-orbit coupling, charge carriers in three-dimensional quadratic band touching Luttinger semimetals have non-trivial wavefunctions characterized by a pseudospin of 3/2. We compute the dielectric permittivity of such…

介观与纳米尺度物理 · 物理学 2020-01-30 Serguei Tchoumakov , William Witczak-Krempa

We present a Hamiltonian in real space which is well suited to study numerically the behavior of holes introduced in III-V semiconductors by Mn doping when the III$^{3+}$ ion is replaced by Mn$^{2+}$. We consider the actual lattice with the…

材料科学 · 物理学 2007-10-03 A. Moreo , Y. Yildirim , G. Alvarez

We present the metamorphosis in the effective-potential profile of layered heterostructures, for several III-V semiconductor binary compounds, when the band mixing of light and heavy holes increases. A root-locus-like procedure, is directly…

介观与纳米尺度物理 · 物理学 2013-02-28 J. J. Flores-Godoy , A. Mendoza-Álvarez , L. Diago-Cisneros , G. Fernández-Anaya

Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi$_{2}$Se$_{3}$ crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen…

介观与纳米尺度物理 · 物理学 2016-05-25 B. A. Piot , W. Desrat , D. K. Maude , M. Orlita , M. Potemski , G. Martinez , Y. S. Hor

We investigate the dynamical dielectric function of a monolayer of molybdenum disulfide within the random phase approximation. While in graphene damping of plasmons is caused by interband transitions, due to the large direct band gap in…

介观与纳米尺度物理 · 物理学 2013-08-08 Andreas Scholz , Tobias Stauber , John Schliemann

The thermoelectric properties of PbSe have significantly improved in recent years reaching figures of merit ZT 1.6. The transport properties of the hole doped high temperature thermoelectric material PbSe are particularly interesting and…

To assess the strength of nematic fluctuations with a finite wave vector in a two-dimensional metal, we compute the static d-wave polarization function for tight-binding electrons on a square lattice. At Van Hove filling and zero…

强关联电子 · 物理学 2012-05-11 Tobias Holder , Walter Metzner

We examine the effects of electron-phonon interaction on the dynamics of the charge carriers doped in two-dimensional (2D) Heisenberg antiferromagnet. The $t$-$J$ model Hamiltonian with a Fr\"ohlich term which couples the holes to a…

凝聚态物理 · 物理学 2009-10-28 B. Kyung , S. I. Mukhin , V. N. Kostur , R. A. Ferrell

We study the interplay between Dirac and Schr\"odinger fermions in the polarization properties of a two-dimensional electron gas (2DEG). Specifically, we analyze the low-energy sector of narrow-gap semiconductors described by a two-band…

介观与纳米尺度物理 · 物理学 2014-02-28 Stefan Juergens , Paolo Michetti , Björn Trauzettel

The studies of quantum states and optics in a {\it p}-type heterojunction with lateral surface quantum dot (antidot) superlattice and in the presence of perpendicular magnetic field are performed. For the first time the Azbel'-- Hofstadter…

介观与纳米尺度物理 · 物理学 2009-11-07 V. Ya. Demikhovskii , D. V. Khomitsky

Topological nodal-line semimetals are characterized by symmetry-protected one-dimensional band-touching lines or loops, which give rise to their peculiar Fermi surfaces at low energies. Furthermore, if time-reversal or inversion symmetry…

介观与纳米尺度物理 · 物理学 2024-01-17 Hamid Rahimpoor , Saeed H. Abedinpour
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