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相关论文: Finite doping signatures of the Mott transition in…

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For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet,…

We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…

强关联电子 · 物理学 2019-08-05 Jakob Steinbauer , Luca de' Medici , Silke Biermann

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

An intricate interplay between superconductivity, pseudogap and Mott transition, either bandwidth driven or doping driven, occurs in materials. Layered organic conductors and cuprates offer two prime examples. We provide a unified…

强关联电子 · 物理学 2012-08-02 G. Sordi , P. Sémon , K. Haule , A. -M. S. Tremblay

It has been reported that upon doping a Mott insulator, there can be a crossover to a pseudogaped metallic phase followed by a first-order transition to another thermodynamically stable metallic phase. We call this first-order metal-metal…

强关联电子 · 物理学 2024-09-16 P. -O. Downey , O. Gingras , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

Tools of quantum information theory offer a new perspective to characterize phases and phase transitions in interacting many-body quantum systems. The Hubbard model is the archetypal model of such systems and can explain rich phenomena of…

强关联电子 · 物理学 2020-11-10 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay

We perform a thorough study of an extended Hubbard model featuring local and nearest-neighbor Coulomb repulsion. Using dynamical mean-field theory we investigated the zero temperature phase-diagram of this model as a function of the…

强关联电子 · 物理学 2017-03-15 K. J. Kapcia , S. Robaszkiewicz , M. Capone , A. Amaricci

High-temperature superconductivity emerges in the CuO$_2$ plane upon doping a Mott insulator. To ascertain the influence of Mott physics plus short-range correlations, we solve a three-band copper-oxide model in the charge-transfer regime…

强关联电子 · 物理学 2016-07-05 L. Fratino , P. Sémon , G. Sordi , A. -M. S. Tremblay

The properties of a phase with large correlation length can be strongly influenced by the underlying normal phase. We illustrate this by studying the half-filled two-dimensional Hubbard model using cellular dynamical mean-field theory with…

强关联电子 · 物理学 2017-06-14 L. Fratino , P. Sémon , M. Charlebois , G. Sordi , A. -M. S. Tremblay

Superconductivity in the cuprates exhibits many unusual features. We study the two-dimensional Hubbard model with plaquette dynamical mean-field theory to address these unusual features and relate them to other normal-state phenomena, such…

强关联电子 · 物理学 2016-03-15 L. Fratino , P. Sémon , G. Sordi , A. -M. S. Tremblay

The nature of the metal-insulator Mott transition at zero temperature has been discussed for a number of years. Whether it occurs through a quantum critical point or through a first order transition is expected to profoundly influence the…

强关联电子 · 物理学 2009-01-26 Matthias Balzer , Bumsoo Kyung , David Sénéchal , A. -M. S. Tremblay , Michael Potthoff

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…

强关联电子 · 物理学 2009-11-11 N. Paris , K. Bouadim , F. Hebert , G. G. Batrouni , R. T. Scalettar

We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…

强关联电子 · 物理学 2009-11-13 G. Sordi , A. Amaricci , M. J. Rozenberg

Mott transitions are studied in the two-dimensional Hubbard model by a non-perturbative theory of correlator projection that systematically includes spatial correlations into the dynamical mean-field approximation. Introducing a nonzero…

强关联电子 · 物理学 2009-11-10 Shigeki Onoda , Masatoshi Imada

The Mott transition in a two-band Hubbard model involving subbands of different widths is studied as a function of temperature using dynamical mean field theory combined with exact diagonalization. The phase diagram is shown to exhibit two…

强关联电子 · 物理学 2009-11-11 A. Liebsch

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…

强关联电子 · 物理学 2009-11-07 Y. Ono , R. Bulla , A. C. Hewson , M. Potthoff

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

强关联电子 · 物理学 2009-11-11 P. Lombardo , R. Hayn , G. I. Japaridze
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