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相关论文: Band Narrowing and Mott Localization in Iron Oxych…

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We present here an investigation of the magnetic ordering in the Mott insulating oxyselenide materials Ln2O2Fe2OSe2 (Ln = Ce, Nd). Neutron powder diffraction data are consistent with a non-collinear multi-k ordering on the iron sublattice…

强关联电子 · 物理学 2014-10-21 Emma E. McCabe , Andrew S. Wills , Laurent Chapon , Pascal Manuel , John S. O. Evans

We describe the local structural properties of the iron oxychalcogenides, La$_2$O$_2$Fe$_2$O$M_2$ ($M$ = S, Se), by using pair distribution function (PDF) analysis applied to total scattering data. Our results of neutron powder diffraction…

By means of the first-principle calculations, we have investigated electronic, magnetic properties and correlation effects for the newly discovered layered oxyselenide Na2Fe2Se2O. Our results reveal that the electron correlations in the Fe…

材料科学 · 物理学 2015-06-05 D. V. Suetin , I. R. Shein , A. L. Ivanovskii

We perform a combined experimental-theoretical study of the Fe-oxychalcogenides (FeO$\emph{Ch}$) series La$_{2}$O$_{2}$Fe$_{2}$O\emph{M}$_{2}$ (\emph{M}=S, Se), which is the latest among the Fe-based materials with the potential \ to show…

The degree of electron correlations remains a central issue in the iron-based superconductors. The parent iron pnictides are antiferromagnetic, and their bad-metal behavior has been interpreted in terms of proximity to a Mott transition. We…

超导电性 · 物理学 2011-05-03 Rong Yu , Jian-Xin Zhu , Qimiao Si

Identifying and characterizing the parent phases of iron-based superconductors is an important step towards understanding the mechanism for their high temperature superconductivity. We present an investigation into the magnetic interactions…

强关联电子 · 物理学 2015-06-18 E. E. McCabe , C. Stock , E. E. Rodriguez , A. S. Wills , J. W. Taylor , J. S. O. Evans

Using a combination of th local-density approximtion (LDA) and dynamicla mean-field theory (DMFT) calculations, we explore the correlated electronic structure of a member of the layered Iron oxychalcogenide Na_{2}Fe_{2}OSe_{2}. We find that…

强关联电子 · 物理学 2013-07-08 Luis Craco , Mukul S. Laad , Stefano Leoni

La$_2$O$_3$Fe$_2$Se$_2$ can be explained in terms of Mott localization in sharp contrast with the metallic behavior of FeSe and other parent parent compounds of iron superconductors. We demonstrate that the key ingredient that makes…

强关联电子 · 物理学 2015-03-09 Gianluca Giovannetti , Luca de' Medici , Markus Aichhorn , Massimo Capone

Electronic structure and magnetic properties for iron deficient TlFe$_{2-x}$Se$_2$ compounds are studied by first-principles calculations. We find that for the case of $x=0.5$ with a Fe-vacancy ordered orthorhombic superstructure, the…

超导电性 · 物理学 2011-05-23 Chao Cao , Jianhui Dai

We present the results of structural and magnetic phase comparisons of the iron oxychalcogenides La$_{2}$O$_{2}$Fe$_{2}$O$M$$_{2}$ ($M$ = S, Se). Elastic neutron scattering reveals that $M$ = S and Se have similar nuclear structures at room…

The ability to tune the iron chalcogenides BaFe2Q3 from Mott insulators, to metals and then superconductors with applied pressure has renewed interest in low-dimensional iron chalcogenides and oxychalcogenides. We report here a combined…

强关联电子 · 物理学 2019-07-31 B. D. Coles , A. D. Hillier , F. C. Coomer , N. C. Bristowe , S. Ramos , E. E. McCabe

One of the central questions about the iron pnictides concerns the extent to which their electrons are strongly correlated. Here we address this issue through the phenomenology of the charge transport and dynamics, single-electron…

超导电性 · 物理学 2009-05-22 Qimiao Si , Elihu Abrahams , Jianhui Dai , Jian-Xin Zhu

The electronic structure and magnetism of LiFeO$_{2}$Fe$_{2}$Se$_{2}$ are investigated using the first-principle calculations. The ground state is N$\acute{e}$el antiferromagnetic (AFM) Mott insulating state for Fe1 with localized magnetism…

超导电性 · 物理学 2014-02-20 Da-Yong Liu , Xiang-Long Yu , Ya-Min Quan , Xiao-Jun Zheng , Liang-Jian Zou

The Mott-insulating iron oxychalcogenides exhibit complex magnetic behaviour and we report here a neutron diffraction investigation into the magnetic ordering in La2O2Fe2OS2. This quaternary oxysulfide adopts the anti-Sr2MnO2Sb2-type…

强关联电子 · 物理学 2018-03-14 Reeya K. Oogarah , Emmanuelle Suard , Emma E. McCabe

A new compound with a quasi-two-dimensional array of FeSe3O tetrahedra and an orthorombic structure, namely BaFe2Se2O, has been successfully fabricated. Experimental results show that this compound is an insulator and has an…

强关联电子 · 物理学 2015-06-05 Fei Han , Xiangang Wan , Bing Shen , Hai-Hu Wen

A theory of heterostructures comprised of LaTiO$_3$ (a Mott insulator) and SrTiO$_3$ (a band insulator) is presented. The band structure of the Ti $d$% -electrons is treated with a nearest neighbor tight-binding approximation; the electric…

强关联电子 · 物理学 2009-11-10 Satoshi Okamoto , Andrew J. Millis

We consider the iron pnictides in terms of a proximity to a Mott insulator. The superexchange interactions contain competing nearest-neighbor and next-nearest-neighbor components. In the undoped parent compound, these frustrated…

超导电性 · 物理学 2009-05-24 Qimiao Si , Elihu Abrahams

Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through…

强关联电子 · 物理学 2025-04-24 Qiang Gao , Haiyang Chen , Wen-shin Lu , Yang-hao Chan , Zhenhua Chen , Yaobo Huang , Zhengtai Liu , Peng Chen

We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single crystal NiS2 across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic…

强关联电子 · 物理学 2011-09-02 Yejun Feng , R. Jaramillo , A. Banerjee , J. M. Honig , T. F. Rosenbaum

We show that the interplay of a high density two-dimensional electron gas and localized electrons in a neighboring Mott insulator leads to kinetic magnetism unique to the Mott/band insulator interface. Our study is based upon a bilayer…

强关联电子 · 物理学 2016-05-10 Jason Iaconis , Hiroaki Ishizuka , D. N. Sheng , Leon Balents
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