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We analyze heat and charge transport through a single-level quantum dot coupled to two BCS superconductors at different temperatures to first order in the tunnel coupling. In order to describe the system theoretically, we extend a real-time…

介观与纳米尺度物理 · 物理学 2019-01-28 Mathias Kamp , Björn Sothmann

Scaling field-effect transistors (FETs) into the sub-10-nm regime fundamentally alters the transport mechanism, challenging long-standing design rules. This study investigates monolayer TMD FETs with channel lengths from 12 nm to 3 nm,…

介观与纳米尺度物理 · 物理学 2026-01-15 Yu-Chang Chen , Chia-Yang Ling , Ken-Ming Lin

Superconductivity has been observed for the 2D electron gas (2DEG) at the interface of KTaO3 with other oxides, with a transition temperature about an order of magnitude higher than its 3d cousin SrTiO3. The superconducting transition…

超导电性 · 物理学 2026-01-19 M. R. Norman

The electron transport through a quantum sphere with three one-dimensional wires attached to it is investigated. An explicit form for the transmission coefficient as a function of the electron energy is found from the first principles. The…

介观与纳米尺度物理 · 物理学 2007-05-23 V. A. Margulis , M. A. Pyataev

We investigate out-of-the equilibrium properties of the electron liquid in a two-dimensional disordered superconductor subject to the electric bias and temperature gradient. We calculate kinetic coefficients and Nyquist noise, and find that…

强关联电子 · 物理学 2015-03-17 A. Petković , N. M. Chtchelkatchev , T. I. Baturina , V. M. Vinokur

The parallel magnetic field tuned two-dimensional superconductor-insulator transition has been investigated in ultrathin films of amorphous Bi. The resistance is found to be independent of temperature on both sides of the transition below…

超导电性 · 物理学 2009-11-11 Kevin A. Parendo , K. H. Sarwa B. Tan , A. M. Goldman

In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device…

材料科学 · 物理学 2015-06-25 I. N. Hulea , S. Fratini , H. Xie , C. L. Mulder , N. N. Iossad , G. Rastelli , S. Ciuchi , A. F. Morpurgo

In the present work we study, both theoretically and experimentally, the temperature increase in a bulk high-temperature superconductor subjected to applied AC magnetic fields of large amplitude. We calculate analytically the equilibrium…

超导电性 · 物理学 2015-05-18 P Vanderbemden , P Laurent , J-F Fagnard , M Ausloos , N Hari Babu , D A Cardwell

We report the results of Hall coefficient R_H and magnetoresistance (MR) measurements on single crystalline samples of Sr3Ru2O7 grown by the floating zone method. R_H was found to be positive over the entire temperature range studied (0.3 -…

强关联电子 · 物理学 2010-10-11 Y. Liu , R. Jin , Z. Q. Mao , K. D. Nelson , M. K. Haas , R. J. Cava

We study the noise of the cotunneling current through one or several tunnel-coupled quantum dots in the Coulomb blockade regime. The various regimes of weak and strong, elastic and inelastic cotunneling are analyzed for quantum-dot systems…

介观与纳米尺度物理 · 物理学 2007-05-23 Eugene Sukhorukov , Guido Burkard , Daniel Loss

We investigate the interplay of ferroelectricity and quantum electron transport at the nanoscale in the regime of Coulomb blockade. Ferroelectric polarization in this case is no longer the external parameter but should be self-consistently…

介观与纳米尺度物理 · 物理学 2014-05-02 S. A. Fedorov , A. E. Korolkov , N. M. Chtchelkatchev , O. G. Udalov , I. S. Beloborodov

We study heating effects of a single metallic quantum dot weakly coupled to two leads. The dominant mechanism for heating at low temperatures is due to inelastic electron cotunneling processes. We calculate the grain temperature profile as…

介观与纳米尺度物理 · 物理学 2010-01-26 Andreas Glatz , I. S. Beloborodov

Fluctuations are significant in mesoscopic systems and of particular importance in understanding quantum transport. Here, we show that fluctuations can be considered as a resource for the operations of open quantum systems as functional…

介观与纳米尺度物理 · 物理学 2020-09-16 Jincheng Lu , Rongqian Wang , Chen Wang , Jian-Hua Jiang

The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming gas atmosphere at different temperatures and for different…

介观与纳米尺度物理 · 物理学 2009-11-07 H. Scherer , Th. Weimann , A. B. Zorin , J. Niemeyer

We measure hole transport in poly(3-hexylthiophene) field effect transistors with channel lengths from 3 $\mu$m down to 200 nm, from room temperature down to 10 K. Near room temperature effective mobilities inferred from linear regime…

介观与纳米尺度物理 · 物理学 2007-05-23 B. H. Hamadani , D. Natelson

We introduce a new class of mesoscopic heat engines consisting of a tunnel junction coupled to a linear thermal bath. Work is produced by transporting electrons up against a voltage bias like in ordinary thermoelectrics but heat is…

介观与纳米尺度物理 · 物理学 2012-08-01 Tomi Ruokola , Teemu Ojanen

In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…

介观与纳米尺度物理 · 物理学 2010-12-07 Chuan-Yu Lin , Wei-Min Zhang

We address the problem of heat transport in a chain of coupled quantum harmonic oscillators, exposed to the influences of local environments of various nature, stressing the effects that the specific nature of the environment has on the…

量子物理 · 物理学 2015-04-16 F. Nicacio , A. Ferraro , A. Imparato , M. Paternostro , F. L. Semião

An effective field theoretic description of $\nu=1$ bilayer electron systems stabilized by Coulomb repulsion in a single wide quantum well is examined using renormalization group techniques. The system is found to undergo a crossover from a…

凝聚态物理 · 物理学 2009-10-31 M. Abolfath , Ramin Golestanian , T. Jungwirth

We study nonlinear transport and non-equilibrium current noise in quasi-classical point contacts (PCs) defined in a low-density high-quality two-dimensional electron system in GaAs. At not too high bias voltages $V$ across the PC the noise…

介观与纳米尺度物理 · 物理学 2014-10-21 E. S. Tikhonov , M. Yu. Melnikov , D. V. Shovkun , L. Sorba , G. Biasiol , V. S. Khrapai