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相关论文: Femtosecond carrier dynamics and saturable absorpt…

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Since graphene has no band gap, photoluminescence is not expected from relaxed charge carriers. We have, however, observed significant light emission from graphene under excitation by ultrashort (30-fs) laser pulses. Light emission was…

介观与纳米尺度物理 · 物理学 2010-09-20 Chun Hung Lui , Kin Fai Mak , Jie Shan , Tony F. Heinz

Using ultrafast optical pump-probe spectroscopy, we study the relaxation dynamics of hot optical phonons in few-layer and multi-layer graphene films grown by epitaxy on silicon carbide substrates and by chemical vapor deposition on nickel…

We report on the response of graphene to high intensity mid-IR radiation and show that graphene exhibits saturable absorption and significant two-photon absorption in the spectral region from 1.55 $\mu$m to 3.50 $\mu$m (0.35 eV to 0.80 eV).…

Understanding and controlling hot-carrier relaxation in graphene is crucial for advancing ultrafast optoelectronic and terahertz technologies. Here, we investigate carrier cooling dynamics in monolayer and bilayer graphene using…

介观与纳米尺度物理 · 物理学 2026-05-21 Sachin Sharm , Elliott Walker , Rachael Myers-Ward , Jenifer Hajzus , Yijing Liu , Paola Barbara , Ioannis Chatzakis

Graphene is widely recognized for its ultrafast and broadband photocurrent response, but whether the broadband ultrafast characteristics are preserved at mid-infrared wavelengths with photon energies below the optical phonon energy remains…

The transient response of an intrinsic graphene, which is caused by the ultrafast interband transitions, is studied theoretically for the range of pumping correspondent to the saturated absorption regime. Spectral and temporal dependencies…

介观与纳米尺度物理 · 物理学 2015-05-20 F. T. Vasko

We investigated negative photoconductivity in graphene using ultrafast terahertz techniques. Infrared transmission was used to determine the Fermi energy, carrier density and mobility of p-type CVD graphene samples. Time-resolved terahertz…

材料科学 · 物理学 2015-06-23 J. N. Heyman , J. D. Stein , Z. S. Kaminski , A. R. Banman , A. M. Massari , J. T. Robinson

The temporal dynamics of charge carriers determines the speed with which electronics can be realized in condensed matter, and their direct manipulation with optical fields promises electronic processing at unprecedented petahertz…

We investigate the polarization dependence of the carrier excitation and relaxation in epitaxial multilayer graphene. Degenerate pump-probe experiments with a temporal resolution of 30 fs are performed for different rotation angles of the…

We present femtosecond transient transmission (or absorbance) measurements in silicon nanowires in the energy range 1.1-3.5 eV, from below the indirect band-gap to above the direct band-gap. Our pump-probe measurements allow us to give a…

When light is absorbed by a semiconductor, photoexcited charge carriers enhance the absorption of far-infrared radiation due to intraband transitions. We observe the opposite behavior in monolayer graphene, a zero-gap semiconductor with…

介观与纳米尺度物理 · 物理学 2013-04-02 A. J. Frenzel , C. H. Lui , W. Fang , N. L. Nair , P. K. Herring , P. Jarillo-Herrero , J. Kong , N. Gedik

Room temperature, wavelength non-degenerate ultrafast pump/probe measurements were performed on GaN and InGaN epilayers and an InGaN multiple quantum well structure. Carrier relaxation dynamics were investigated as a function of excitation…

介观与纳米尺度物理 · 物理学 2015-06-24 Umit Ozgur , Henry O. Everitt

We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with…

The resistivity of ultra-clean suspended graphene is strongly temperature dependent for 5K<T<240K. At T~5K transport is near-ballistic in a device of ~2um dimension and a mobility ~170,000 cm^2/Vs. At large carrier density, n>0.5*10^11…

介观与纳米尺度物理 · 物理学 2009-11-13 K. I. Bolotin , K. J. Sikes , J. Hone , H. L. Stormer , P. Kim

Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising…

Nonlinear transmission of 80 and 140 femtosecond pulsed light with $0.79 \mu m$ wavelength through single walled carbon nanotubes suspended in water containing sodium dodecyl sulphate is studied. Pulse-width independent saturation…

材料科学 · 物理学 2009-11-13 N. Kamaraju , Sunil Kumar , Srinivasan Krishnamurthy , Shekhar Guha , A. K. Sood , C. N. R. Rao

While the Dirac band structure of graphene has established it as a leading platform for ultrafast optoelectronics, its non-perturbative nonlinear response under intense excitation remains poorly understood. Here, we report ultrafast…

光学 · 物理学 2026-04-27 Xiaolong Lv , Yu Zhang , Yuxuan Wei , Chuanshan Tian

Using optical-pump terahertz-probe spectroscopy, we study the relaxation dynamics of photoexcited carriers in graphene at different temperatures. We find that at lower temperatures the tail of the relaxation transients as measured by the…

介观与纳米尺度物理 · 物理学 2015-05-30 Jared H. Strait , Haining Wang , Shriram Shivaraman , Virgil B. Shields , Michael G. Spencer , Farhan Rana

We use a quantum-dynamical model to investigate the optical response of graphene under low excitation power. Ultrafast carrier relaxation processes, which play an important role for understanding the optical response of graphene, are…

介观与纳米尺度物理 · 物理学 2011-06-27 Zheshen Zhang , Paul L. Voss

For most optoelectronic applications of graphene a thorough understanding of the processes that govern energy relaxation of photoexcited carriers is essential. The ultrafast energy relaxation in graphene occurs through two competing…