相关论文: Interface roughness transport in THz quantum casca…

In a quantum Hall interferometer, the dependence of the signal on source-drain voltage is controlled by details of the edge physics, such as the velocities of edge modes and the interaction between them and with screening layers. Such…

Atmospheric turbulence makes free-space quantum polarization links intrinsically time varying, whereas receiver-side reduced interfaces are often treated as static. This paper develops a slow-time receiver interface by extending an…

Due to their high energy, hot electrons in quantum Hall edge states can be considered as single particles that have the potential to be used for quantum optics-like experiments. Unlike photons, however, electrons typically undergo…

Using stability arguments, this Brief Report suggests that a term that enhances the surface tension in the presence of large height fluctuations should be included in the Kardar-Parisi-Zhang equation. A one-loop renormalization group…

Two-dimensional transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, yet their implementation is hindered by limited sample stability and challenges in forming reliable electrical…

Graphene has opened new avenues of research in quantum transport, with potential applications for coherent electronics. Coherent transport depends sensitively on scattering from microscopic disorder present in graphene samples: electron…

We study the effect of electron-electron interactions on the transport in an inhomogeneous quantum wire. We show that contrary to the well-known Luttinger liquid result, non-uniform interactions contribute substantially to the resistance of…

The single photon detectors currently used in quantum communication schemes impose considerable restrictions on signal registration and dark count rates, require cooling to low temperatures, and are relatively expensive. Alternative…

Intelligent reflecting surfaces (IRSs) have emerged as a cost-effective technology for terahertz (THz) communications by enabling programmable control of the wireless environment. This paper provides a comprehensive overview of IRSs-aided…

We consider the effect of electron-electron interactions on a voltage biased quantum point contact in the tunneling regime used as a detector of a nearby qubit. We model the leads of the quantum point contact as Luttinger liquids,…

Ensuring a stable power supply in rural areas relies heavily on effective inspection of power equipment, particularly transmission lines (TLs). However, detecting TLs from aerial imagery can be challenging when dealing with misalignments…

We consider a far infrared (terahertz), room-temperature detector based on a microcantilever sensor of the radiation pressure. This system has a significantly higher sensitivity than existing uncooled detectors in the far infrared…

Ultrasensitive detection of the frequency, phase, and amplitude of radio frequency (RF) electric fields is central to a variety of important applications, including radio communication, cosmology, dark matter searches, and high-fidelity…

We have fabricated indium-doped ZnO (IZO) nanowires (NWs) and carried out 4-probe electrical-transport measurements at low temperatures. The NWs reveal charge conduction behavior characteristic of disordered metals. In addition to the $T$…

Intense terahertz (THz) electromagnetic fields have been utilized to reveal a variety of extremely nonlinear optical effects in many materials through nonperturbative driving of elementary and collective excitations. However, such nonlinear…

We report on a theoretical study of quantum charge transport in atomistic models of silicon nanowires with surface roughness-based disorder. Depending on the nanowires features (length, roughness profile) various conduction regimes are…

High-temperature superconductivity confined to nanometer-size interfaces has been a long standing goal because of potential applications^{1,2} and the opportunity to study quantum phenomena in reduced dimensions^{3,4}. However, this is a…

The metal-semiconductor contact is a major factor limiting the shrinking of transistor dimension to further increase device performance. In-plane edge contacts have the potential to achieve lower contact resistance due to stronger orbital…

Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…

In the field of integrated sensing and communication, there's a growing need for advanced environmental perception. The terahertz (THz) frequency band, significant for ultra-high-speed data connections, shows promise in environmental…