相关论文: Understanding amorphous phase-change materials fro…

Under many circumstances many soft and hard materials are present in a puzzling wealth of non-equilibrium amorphous states, whose properties are not stationary and depend on preparation. They are often summarized in unconventional "phase…

The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…

Controlling phase transitions in quantum systems via coupling to reservoirs has been mostly studied for idealized memory-less environments under the so-called Markov approximation. Yet, most quantum materials and experiments in the solid…

Known simulations of random access machines (RAMs) or parallel RAMs (PRAMs) by Boolean circuits incur significant polynomial blowup, due to the need to repeatedly simulate accesses to a large main memory. Consider a single modification to…

In this research, atomistic molecular dynamics simulations are combined with mesoscopic phase-field computational methods in order to investigate phase-transformation in polycrystalline Aluminum microstructure. In fact, microstructural…

Large-scale integration of emerging nanoscale non-volatile memory devices, e.g. resistive random-access memory (RRAM), can enable a new generation of neuromorphic computers that can solve a wide range of machine learning problems. Such…

The development of thermal energy storage materials is the most attractive strategy to harvest the solar energy and increase the energy utilization efficiency. Phase change materials (PCMs) have received much attention in this research…

We apply principal component analysis, a method frequently used in image processing and unsupervised machine learning, to characterize particle displacements observed in the steady shear flow of amorphous solids. PCA produces a…

Our investigations on porous Si show that on increase of pressure it undergoes crystalline phase transitions instead of pressure induced amorphization - claimed earlier, and the amorphous phase appears only on release of pressure. This…

The generic changes of the electronic compressibility in systems which show magnetic instabilities is studied. It is shown that, when going into the ordered phase, the compressibility is reduced by an amount comparable to the its original…

Resistive Random Access Memory (RRAM) and Phase Change Memory (PCM) devices have been popularly used as synapses in crossbar array based analog Neural Network (NN) circuit to achieve more energy and time efficient data classification…

We poorly understand the properties of amorphous systems at small length scales, where a continuous elastic description breaks down. This is apparent when one considers their vibrational and transport properties, or the way forces propagate…

Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…

Random media introduce large degrees of freedom in device design and can thus address challenges in manipulating optical waves. Wave shaping with metasurfaces has mainly utilized periodic or quasi-periodic grids, and, the potential of…

In simulations, particles are traditionally treated as rigid platforms with variable sizes, shapes and interaction parameters. While this representation is applicable for rigid core platforms, particles consisting of soft platforms (e.g.…

The discovery and optimization of phase-change and shape memory alloys remain a tedious and expensive process. Here a simple computational method is proposed to determine the ideal phase-change material for a given alloy composed of three…

Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has multiple resistance states along with excellent endurance and…

Chalcogenide phase-change materials (PCMs) are regarded as the leading candidate for storage-class non-volatile memory and neuro-inspired computing. Recently, using the $TiTe_2$/$Sb_2Te_3$ material combination, a new framework -…

Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of…

The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of…