相关论文: Multiferroic oxides-based flash-memory and spin-fi…
The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We conceive a new concept of non-volatile memories based on a type of nonlinear magnetoelectric effects showing a…
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…
We study thin films and magnetic tunnel junction nanopillars based on Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO multilayers by electrical transport and magnetometry measurements. These measurements suggest that an ultrathin magnetic oxide layer…
The quantitative understanding of converse magnetoelectric effects, i.e., the variation of the magnetization as a function of an applied electric field, in extrinsic multiferroic hybrids is a key prerequisite for the development of future…
All-electric-controlled nonvolatile spin field-effect transistors (SFETs) based on two-dimensional (2D) multiferroic van der Waals (vdW) heterostructures hold great promise for advanced spintronics applications. However, their performance…
Magnetoelectric multiferroics are highly sought after for applications in low-power electronics and for advancing fundamental research, including axion insulators and dark matter detection. However, achieving a combination of ferroic spin…
A collective excitation of the spin structure in a magnetic insulator can transmit spin-angular momentum with negligible dissipation. This quantum of a spin wave, introduced more than nine decades ago, has always been manipulated through…
With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…
Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor…
A new mechanism for memristive switching in 2D materials is through electric-field controllable electronic/structural phase transitions, but these devices have not outperformed status quo 2D memristors. Here, we report a high-performance…
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing…
We present both static and time-resolved second harmonic generation (SHG) measurements on polar antiferromagnet Fe$_2$Mo$_3$O$_8$ to monitor the evolution of the electric polarization change and its coupling to magnetic order. We find that…
A novel 2-dimensional electron gas (2DEG) system with high-mobility was discovered at the interface of two perovskite oxides, a polar orthorhombic perovskite LaScO3 (LSO) and a nonpolar cubic perovskite BaSnO3 (BSO). Upon depositing the LSO…
Multiferroic materials, known for their multiple tunable orders, present an exceptional opportunity to manipulate nonlinear optical responses, which are sensitive to symmetry. In this study, we propose leveraging electric and magnetic…
Time-dependent rotational electric polarizations have been proposed to generate temporally varying magnetic moments, for example, through a combination of ferroelectric polarization and optical phonons. This phenomenon has been called…
Creating and manipulating spin polarization in low-dimensional electron systems (such as two-dimensional electron gases) is fundamentally essential for spintronic applications, which is yet a challenge to date. In this work, we establish…
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the…
We propose a spintronic metal oxide semiconductor field effect transistor (spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only one of…
This review article aims at illustrating the recent progresses in the electrical control of magnetism in oxides with profound physics and enormous potential applications. In the first part, we provide a comprehensive summary of the…
In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that…