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相关论文: Transport properties of graphene in the high-curre…

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We study the electric and thermal transport of the Dirac carriers in monolayer graphene using the Boltzmann-equation approach. Motivated by recent thermopower measurements [F. Ghahari, H.-Y.~Xie, T. Taniguchi, K. Watanabe, M.~S.~Foster, and…

介观与纳米尺度物理 · 物理学 2016-05-03 Hong-Yi Xie , Matthew S. Foster

We present a trajectory-resolved framework for charge transport in graphene and related two-dimensional carbon systems beyond the ideal ballistic and fully coherent limits. Transport is described by kinetic Monte Carlo hopping on a…

介观与纳米尺度物理 · 物理学 2026-04-20 J. P. Dadario Pereira , Raphael Tromer , Luiz A. Ribeiro Junior , Douglas S. Galvao

The current and the shot noise in a graphene sheet were analyzed in the ballistic regime for arbitrary voltage drops between leads and the sheet in the limit of infinite aspect ratio of the sheet width to its length, when quantization of…

介观与纳米尺度物理 · 物理学 2009-11-13 E. B. Sonin

Impurities are unavoidable during the preparation of graphene samples and play an important role in graphene's electronic properties when they are adsorbed on graphene surface. In this work, we study the electronic structures and transport…

介观与纳米尺度物理 · 物理学 2020-03-31 Lan Chen , Fangping Ouyang , Songshan Ma , Tie-Feng Fang , Ai-Min Guo , Qing-Feng Sun

Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…

介观与纳米尺度物理 · 物理学 2015-06-05 J. Velasco , Y. Lee , L. Jing , G. Liu , W. Bao , C. N. Lau

We have investigated the main scattering mechanisms affecting mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects,…

介观与纳米尺度物理 · 物理学 2011-03-03 Alessandro Betti , Gianluca Fiori , Giuseppe Iannaccone

Electron transport in bilayer graphene is studied by using a first principles analysis and theMonte Carlo simulation under conditions relevant to potential applications. While the intrinsic properties are found to be much less desirable in…

介观与纳米尺度物理 · 物理学 2015-05-30 X. Li , K. M. Borysenko , M. Buongiorno Nardelli , K. W. Kim

The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical…

介观与纳米尺度物理 · 物理学 2008-10-02 Xu Du , Ivan Skachko , Anthony Barker , Eva Y. Andrei

The nonlinear optical and optoelectronic properties of graphene with the emphasis on the processes of harmonic generation, frequency mixing, photon drag and photogalvanic effects as well as generation of photocurrents due to coherent…

介观与纳米尺度物理 · 物理学 2014-02-04 M. M. Glazov , S. D. Ganichev

Using a semiclassical Boltzmann transport equation (BTE) approach, we derive analytical expressions for electric and thermoelectric transport coefficients of graphene in the presence and absence of a magnetic field. Scattering due to…

材料科学 · 物理学 2017-04-26 Arpan Kundu , Majed Alrefae , Timothy S. Fisher

We study carrier transport through graphene on SrTiO$_3$ substrates by considering relative contributions of Coulomb and resonant impurity scattering to graphene resistivity. We establish that charged impurity scattering must dominate…

介观与纳米尺度物理 · 物理学 2012-08-28 S. Das Sarma , Qiuzi Li

Ultrafast thermal transport in low-dimensional materials challenges traditional diffusive models due to reduced scattering, strong electron-phonon coupling, and pronounced non-equilibrium effects. To address these complexities, we extend…

介观与纳米尺度物理 · 物理学 2025-12-01 Houssem Rezgui , Chuang Zhang , Clivia Sotomayor-Torres

We present a joint theory-experiment study on the transmission/absorption saturation after ultrafast pulse excitation in graphene. We reveal an unconventional double-bended saturation behavior: Both bendings separately follow the standard…

介观与纳米尺度物理 · 物理学 2017-05-24 Torben Winzer , Martin Mittendorff , Stephan Winnerl , Manfred Helm , Ermin Malic , Andreas Knorr

We present a numerical study on the intraband optical conductivity of hot carriers at quasi-equilibria in photoexcited graphene based on the semiclassical Boltzmann transport equations (BTE) with the aim of understanding the effects of…

介观与纳米尺度物理 · 物理学 2021-02-24 Masatsugu Yamashita , Chiko Otani

Prompted by recent reports on $\sqrt{3} \times \sqrt{3}$ graphene superlattices with intrinsic inter-valley interactions, we perform first-principles calculations to investigate the electronic properties of periodically nitrogen-doped…

介观与纳米尺度物理 · 物理学 2021-02-05 Fuming Xu , Zhizhou Yu , Zhirui Gong , Hao Jin

We probe the local inhomogeneities in the electronic properties of exfoliated graphene due to the presence of charged impurities in the SiO2 substrate using a combined scanning tunneling and electrostatic force microscope. Contact potential…

介观与纳米尺度物理 · 物理学 2012-02-21 Andres Castellanos-Gomez , Roel H. M. Smit , Nicolás Agraït , Gabino Rubio-Bollinger

Graphene -a recently discovered one-atom-thick layer of graphite- constitutes a new model system in condensed matter physics, because it is the first material in which charge carriers behave as massless chiral relativistic particles. The…

Boltzmann diffusive transport including relaxation time and mobility in graphene limited by ionized impurity scattering is investigated. The relaxation time is evaluated with two different methods, first one directly use Boltzmann transport…

介观与纳米尺度物理 · 物理学 2018-01-03 Yi Zhan

We theoretically study the electronic and transport properties of two graphene layers vertically coupled by an insulating layer under the influence of a time-periodic external light field. The non-adiabatic driving induces excitations of…

介观与纳米尺度物理 · 物理学 2020-06-11 Pascal Stadler , Tomas Löfwander , Mikael Fogelström

Electronic transport through rubrene single-crystal field effect transistors (FETs) is investigated experimentally in the high carrier density regime (n ~ 0.1 carrier/molecule). In this regime, we find that the current does not increase…

强关联电子 · 物理学 2009-11-13 S. Fratini , H. Xie , I. N. Hulea , S. Ciuchi , A. F. Morpurgo