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Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor-semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si…

Dynamic conductance spectra are taken from Au/CeCoIn$_5$ point contacts in the Sharvin limit along the (001) and (110) directions. Our conductance spectra, reproducibly obtained over wide ranges of temperature, constitute the cleanest data…

超导电性 · 物理学 2015-06-25 Wan Kyu Park , Laura H. Greene , John L. Sarrao , Joe D. Thompson

As progress is made on thin-film synthesis of Heusler compounds, a more complete understanding of the surface will be required to control their properties, especially as functional heterostructures are explored. Here, the surface…

Complete suppression of the native n-type Schottky barrier is demonstrated in Al/InGaAs(001) junctions grown by molecular-beam-epitaxy. This result was achieved by the insertion of Si bilayers at the metal-semiconductor interface allowing…

超导电性 · 物理学 2007-05-23 S. De Franceschi , F. Giazotto , F. Beltram , L. Sorba , M. Lazzarino , A. Franciosi

The reconstructions of the InP(001) surface prepared by molecular beam epitaxy have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The growth chamber contains a highly…

介观与纳米尺度物理 · 物理学 2015-03-16 V. P. LaBella , Z. Ding , D. W. Bullock , C. Emery , P. M. Thibado

We develop a new theoretical approach for modelling a wide range of semiconductor-superconductor structures with arbitrary potential barriers and a spatially-dependent superconducting order parameter. We demonstrate asymmetry in the…

超导电性 · 物理学 2018-03-14 Shlomi Bouscher , Roni Winik , Alex Hayat

We study tunneling spectroscopy between a normal metal and underdoped cuprate superconductor modeled by a phenomenological theory in which the pseudogap is a precursor to the undoped Mott insulator. In the transparent tunneling limit, the…

超导电性 · 物理学 2010-12-08 Kai-Yu Yang , Kun Huang , Wei-Qiang Chen , T. M. Rice , Fu-Chun Zhang

Physical properties of Si(111)-7x7 surface of low-doped n- and p-type Si samples is studied in the liquid helium temperature region by the scanning-tunnelling microscopy and spectroscopy. Conduction required for the study is provided by…

介观与纳米尺度物理 · 物理学 2015-06-05 A. B. Odobescu , S. V. Zaitsev-Zotov

Using the highly inhomogeneous fields of a magnetic substrate, tunable junctions between superconducting and normal state regions were created inside a thin film superconductor. The investigation of these junctions, created in the same…

超导电性 · 物理学 2009-09-29 J. Fritzsche , R. B. G. Kramer , V. V. Moshchalkov

We theoretically investigate the quantum transports in a junction between a superconductor and a silicene nanoribbon, under the effect of a magnetic exchange field. We find that for a narrow nanoribbon of silicene, remarkable crossed…

介观与纳米尺度物理 · 物理学 2016-10-26 Kangkang Li , Yan-Yang Zhang

Using the "break-junction" technique we prepared and studied superconductor - constriction - superconductor nanocontacts in polycrystalline samples of Fe-based superconductors CeO$_{0.88}$F$_{0.12}$FeAs (Ce-1111; $T_C^{\rm bulk} = 41 \pm 1…

Andreev reflection is investigated in layered anisotropic normal metal / superconductor (N/S) systems in the case of an energy gap \Delta in S not negligible with respect to the Fermi energy E_F, as it probably occurs with high critical…

超导电性 · 物理学 2009-10-31 A. A. Golubov , F. Tafuri

The investigation of the electronic properties of semiconductor surfaces using scanning tunnelling spectroscopy (STS) is often hindered by non-equilibrium transport of the injected charge carriers. We propose a correction method for the…

材料科学 · 物理学 2015-05-13 S. Modesti , H. Gutzmann , J. Wiebe , R. Wiesendanger

First principles calculations of the geometric and electronic structures have been performed for two coverages (0.25 ML and 0.5 ML) of C on Ni(001) to understand the mechanism of the Ni(001) reconstruction induced by carbon adsorption. The…

材料科学 · 物理学 2015-06-25 Sergey Stolbov , Sampyo Hong , Abdelkader Kara , Talat S. Rahman

We evaluate the differential conductance measured in a scanning tunneling microscopy (STM) setting at arbitrary electron transmission between an STM tip and a two-dimensional (2D) superconductor with arbitrary gap structure. Our analytical…

超导电性 · 物理学 2023-05-30 P. O. Sukhachov , Felix von Oppen , L. I. Glazman

We theoretically demonstrate unusual features of superconducting proximity effect in gapped graphene which presents a pseudospin symmetry-broken ferromagnet with a net pseudomagnetization. We find that the presence of a band gap makes the…

介观与纳米尺度物理 · 物理学 2015-06-11 Leyla Majidi , Malek Zareyan

We have studied the superconducting Si(111)-(root7xroot3)-In surface using a 3He-based low-temperature scanning tunneling microscope (STM). Zero-bias conductance (ZBC) images taken over a large surface area reveal that vortices are trapped…

介观与纳米尺度物理 · 物理学 2014-12-12 Shunsuke Yoshizawa , Howon Kim , Takuto Kawakami , Yuki Nagai , Tomonobu Nakayama , Xiao Hu , Yukio Hasegawa , Takashi Uchihashi

We experimentally investigate charge transport through a single planar junction between Cd$_3$As$_2$ Dirac semimetal and a normal Au lead. For non-superconducting bulk Cd$_3$As$_2$ samples, we observe non-Ohmic $dV/dI(V)$ curves, which…

介观与纳米尺度物理 · 物理学 2019-04-02 O. O. Shvetsov , V. D. Esin , A. V. Timonina , N. N. Kolesnikov , E. V. Deviatov

Electrons incident from a normal metal onto a superconductor are reflected back as holes - a process called Andreev reflection. In a normal metal where the Fermi energy is much larger than a typical superconducting gap, the reflected hole…

介观与纳米尺度物理 · 物理学 2016-08-04 D. K. Efetov , L. Wang , C. Handschin , K. B. Efetov , J. Shuang , R. Cava , T. Taniguchi , K. Watanabe , J. Hone , C. R. Dean , P. Kim

We present atomic scale images of a V_2O_3 (0001)-surface, which show that the surface is susceptible to reconstruction by dimerization of vanadium ions. The atomic order of the surface depends sensitively on the surface preparation.…

强关联电子 · 物理学 2009-11-07 M. Preisinger , J. Will , M. Klemm , S. Klimm , S. Horn