相关论文: Electronic transport in ferromagnetic conductors w…

This review is focused on extrinsic magnetotransport effects in ferromagnetic oxides. It consists of two parts; the second part is devoted to an overview of experimental data and theoretical models for extrinsic magnetotransport phenomena.…

The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic…

Existing data for soft magnetic materials of critical current for domain-wall motion, wall speed driven by a magnetic field, and wall electrical resistance, show that all three observable properties are related through a single parameter:…

Transport through zincblende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the spin-orbit interaction. The intrinsic resistance is…

We study the magnetic dynamics of magnetoelectric antiferromagnetic thin films, where an unconventional boundary ferromagnetism coexists with the bulk N\'{e}el phase below the N\'{e}el temperature. The spin exchange between the two order…

We analyze mesoscopic electronic transport in a Chern mosaic: a regular pattern of domains whose electronic bands carry differing local Chern numbers. An example platform where a Chern mosaic can arise is a moir\'e heterostructure, where…

We present a theoretical study of heat transport in electrically insulating ferromagnetic wires containing a domain wall. In the regime of validity of continuum micromagnetism a domain wall is found to have no effect on the heat…

Domain walls in antiferromagnets under a spin-polarized current present dynamical behavior that is not observed in ferromagnets, and it is tunable by the current polarization. Precessional dynamics is obtained for perpendicular spin…

We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel…

A theory of spin-transport in hybrid normal metal - ferromagnetic electronic circuits is developed, taking into account non-collinear spin-accumulation. Spin-transport through resistive elements is described by 4 conductance parameters.…

We review our recent magnetotransport and micromagnetic studies of lithographically defined epitaxial thin film structures of bcc Fe and hcp Co with stripe domains. Micromagnetic structure and resistivity anisotropy are shown to be the…

Ferroelectric domain walls hold great promise for innovative applications in ferroelectric devices. However, the underlying mechanisms behind the observed giant conductance of charged domain walls remain poorly understood. Using a…

Soliton-based computing is relied on their unique properties for transporting energy and emerging intact from head-on collisions. Magnetic domain walls are often referred to as solitons disregarding the strict mathematical definition…

We study electronic transport properties of ferromagnetic nanoparticle arrays and nanodomain materials near the Curie temperature in the limit of weak coupling between the grains. We calculate the conductivity in the Ohmic and non-Ohmic…

Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72,…

Using density functional theory implemented within a tight-binding linear muffin-tin orbital method we perform calculations of electronic, magnetic and transport properties of ferromagnetic free-standing fcc Co wires with diameters up to…

We present a quantitative investigation of magnetic domain wall pinning in thin magnets with perpendicular anisotropy. A self-consistent description exploiting the universal features of the depinning and thermally activated sub-threshold…

We theoretically study the antiferromagnetic domain wall motion actuated by an inhomogeneous external magnetic field. The Lagrangian and the equations of motion of antiferromagnetic spins under an inhomogeneous magnetic field are derived,…

Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…

We present the theory of the spin motive force in antiferromagnets. We consider a one-dimensional antiferromagnetic domain wall strongly coupled with conduction electrons via an exchange interaction. We carry out a unitary transformation…